2SK3666-3-TB-E
Sanyo Semiconductor
JFET, N CH, 30V, 0.01A, SOT23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:600µA; Zero Gate Voltage Drain Current Idss Max:6mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.2V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; MSL:-; Current Idss Max:6mA; Current Idss Min:600µA; Drain Source Voltage Vds:30V; No. of Pins:3Pins; Power Dissipation Pd:200mW; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Zero Gate Voltage Drain Current Idss:600µA to 6mA
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| element14 APAC | 2SK3666-3-TB-E | 1632 | 5 | * $0.14 | * $0.14 | * $0.11 | * $0.10 | * $0.10 | |
| Farnell | 2SK3666-3-TB-E | 814520 | 3000 | * $0.00 | * $0.00 | * $0.00 | * $0.00 | * $0.00 | * $0.08 |
| Newark | 2SK3666-3-TB-E | 569 | 6000 | $0.00 | $0.00 | $0.00 | $0.00 | $0.00 | $0.00 |
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| Win Source | LB1989-MPB-E | 4740 |
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| Win Source | STK672-640B-E | 3920 | 3 |
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| Win Source | LA4446-E | 5950 |
4SVP560M
Sanyo Semiconductor
CAP, 560µF, 4V, RADIAL, SMD; AE Capacitor Case:Radial Can - SMD; Capacitance:560µF; Voltage Rating:4V; ESR:0.013ohm; Product Range:-; Lifetime @ Temperature:2000 hours @ 105°C; Operating Temperature Min:-55°C; Operating Temperature Max:105°C; Ripple Current AC:4.52A; Diameter:8mm; Height:12.6mm; Automotive Qualification Standard:-; MSL:-; Capacitance Tolerance:± 20%; Capacitance Tolerance ±:± 20%; Capacitor Case Style:Radial Can - SMD; External Depth:10.3mm; External Length / Height:12.6mm; External Width:8.3mm; Operating Temperature Range:-55°C to +105°C; Tolerance +:20%; Tolerance -:20%; Voltage Rating V DC:4V
6SVP47M
Sanyo Semiconductor
CAP, 47µF, 6.3V, RADIAL, SMD; AE Capacitor Case:Radial Can - SMD; Capacitance:47µF; Voltage Rating:6.3V; ESR:0.07ohm; Product Range:-; Lifetime @ Temperature:2000 hours @ 105°C; Operating Temperature Min:-55°C; Operating Temperature Max:105°C; Ripple Current AC:1.1A; Diameter:5mm; Height:5.9mm; Automotive Qualification Standard:-; MSL:-; Capacitance Tolerance:± 20%; Capacitance Tolerance ±:± 20%; Capacitor Case Style:Radial Can - SMD; External Depth:5.3mm; External Length / Height:5.9mm; External Width:5.3mm; Operating Temperature Range:-55°C to +105°C; Tolerance +:20%; Tolerance -:20%; Voltage Rating V DC:6.3V
20SVP33M
Sanyo Semiconductor
CAP, 33µF, 20V, RADIAL, SMD; AE Capacitor Case:Radial Can - SMD; Capacitance:33µF; Voltage Rating:20V; ESR:0.045ohm; Product Range:-; Lifetime @ Temperature:2000 hours @ 105°C; Operating Temperature Min:-55°C; Operating Temperature Max:105°C; Ripple Current AC:1.89A; Diameter:8mm; Height:6.9mm; Automotive Qualification Standard:-; MSL:-; Capacitance Tolerance:± 20%; Capacitance Tolerance ±:± 20%; Capacitor Case Style:Radial Can - SMD; External Depth:8.3mm; External Length / Height:6.9mm; External Width:8.3mm; Operating Temperature Range:-55°C to +105°C; Tolerance +:20%; Tolerance -:20%; Voltage Rating V DC:20V
2SC5707-TL-E
Sanyo Semiconductor
TRANSISTOR, NPN, 50V, 8A, TO-251; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:330MHz; Power Dissipation Pd:15W; DC Collector Current:8A; DC Current Gain hFE:560hFE; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Gain Bandwidth ft Typ:330MHz
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| element14 APAC | 2SC5707-TL-E | 1898 | 100 | * $0.00 | * $0.00 | * $0.00 | * $0.88 | * $0.60 | * $0.59 |
| Farnell | 2SC5707-TL-E | 1748 | 100 | * $0.00 | * $0.00 | * $0.00 | * $0.87 | * $0.66 | * $0.65 |
2SC5888
Sanyo Semiconductor
TRANSISTOR, NPN, 50V, 10A, TO-220ML; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:200MHz; Power Dissipation Pd:25W; DC Collector Current:10A; DC Current Gain hFE:700hFE; Transistor Case Style:TO-220ML; No. of Pins:3Pins; MSL:-; Gain Bandwidth ft Typ:200MHz
TIG052TS-TL-E
Sanyo Semiconductor
IGBT, N CH, 400V, 150A, TSSOP8; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):5.5V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:400V; Transistor Case Style:TSSOP; No. of Pins:8Pins; Operating Temperature Max:-; MSL:-; Transistor Type:IGBT
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| Farnell | TIG052TS-TL-E | 683717 | 49 | * $0.00 | * $0.00 | * $1.70 | * $1.70 | * $1.70 | * $1.70 |