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OPA387DBVT

Texas Instruments OPA387DBVT

LMK1D1212RHAT

Texas Instruments LMK1D1212RHAT

LMK1D2106RHAR

Texas Instruments LMK1D2106RHAR

OPA2992IDGKR

Texas Instruments OPA2992IDGKR

SN74HCS244RKSR

Texas Instruments SN74HCS244RKSR

LM2902LVQPWRQ1

Texas Instruments LM2902LVQPWRQ1

DRV8311HRRWR

Texas Instruments DRV8311HRRWR

UCC27614DSGR

Texas Instruments UCC27614DSGR

LM2904BIDDFR

Texas Instruments LM2904BIDDFR

OPA2990IDGKR

Texas Instruments OPA2990IDGKR

Price
RoHS Y Y Y Y Y Y Y Y Y Y
Lead Status Y Y Y Y Y Y Y Y Y Y
Architecture CMOS CMOS CMOS Integrated FET Bipolar CMOS
CMRR(typ)(dB) 150 92 115
Features Zero Drift 2 Dual 1 EMI Hardened,MUX Friendly,Small Size Balanced outputs,High speed (tpd 10-50ns),Input clamp diode Cost Optimized,EMI Hardened,Small Size Current sense Amplifiers,Hardware Management I/F,Integrated FETs,LDO,SPI/I2C,Slew Rate Adjustment Enable pin,UVLO Cost Optimized,EMI Hardened,Standard Amps EMI Hardened,High Cload Drive,MUX Friendly,Shutdown,Small Size
GBW(typ)(MHz) 5.7 1 1.1
Input bias current(max)(pA) 150 15
Input common mode headroom (to negative supply)(typ)(V) -0.2 -0.1 -0.2
Input common mode headroom (to positive supply)(typ)(V) 0.1 -1 0.2
Iout(typ)(A) 0.055 0.04 0.08
Iq per channel(typ)(mA) 0.57 0.09 0.12
Number of channels 1 8 4 1 2
Offset drift(typ)(V/C) 0.003 4 0.6
Operating temperature range(C) -40 -40 -40 -40 to 125 -40 -40 -40 -40 -40 to 125 -40
Output swing headroom (to negative supply)(typ)(V) 0.001 0.04 0.025
Output swing headroom (to positive supply)(typ)(V) -0.001 -1 -0.025
Package area(mm^2) 8.12 36 36 11.25 32 9 4 14.7
Package size (L x W)(mm) 2.9 x 2.8 6 x 6 6 x 6 4.5 x 2.5 5 x 6.4 3 x 3 2 x 2 3 x 4.9
Package type SOT-23 VQFN VQFN VQFN TSSOP WQFN WSON VSSOP
Pin count 5.0 40.0 40.0 20 14.0 24 8 8.0
Rail-to-rail In,Out In,Out In to V- In to V- In,Out
Rating Catalog Catalog Catalog Catalog Catalog Automotive Catalog Catalog Catalog Catalog
Slew rate(typ)(V/s) 2.8 1.5 4.5
THD + N at 1 kHz(typ)(%) 0.002
TI functional safety category Functional Safety-Capable
TI package name DBV PW DGK
Total supply voltage (+5 V = 5, 5 V = 10)(max)(V) 5.5 5.5 40
Total supply voltage (+5 V = 5, 5 V = 10)(min)(V) 1.7 2.7 2.7
Vn at 1 kHz(typ)(nVHz) 8.5 40 30
Vos (offset voltage at 25C)(max)(mV) 0.002 3 1.5
TI.com inventory 72001 1049 147546 11027 396938 105775 333207 310922 9981 313740
Approx. price(US$) 1.188 | 1ku 5.777 | 1ku 6.335 | 1ku .644 | 1ku .139 | 1ku .081 | 1ku .49 | 1ku .6 | 1ku .053 | 1ku .525 | 1ku
Additive RMS jitter(typ)(fs) 45 45
Core supply voltage(V) 1.8,2.5,3.3 1.8,2.5,3.3
Function Clock buffer,Differential Clock buffer,Differential
Input type HCSL,LP-HCSL,LVCMOS,LVDS,LVPECL HCSL,LP-HCSL,LVCMOS,LVDS,LVPECL Schmitt-Trigger
Number of outputs 12 12
Output frequency(max)(MHz) 2000 2000
Output skew(ps) 20 20
Output supply voltage(V) 1.8,2.5,3.3 1.8,2.5,3.3
Output type LVDS LVDS 3-State
Input bias current(Typ)(pA) 10 10000
Output current(Typ)(mA) 65 30
Output swing headroom (to positive supply)(Typ)(V) -0.048 -1.4
Total supply voltage(Min)(+5V=5, +/-5V=10) 2.7 3
CMRR(Min)(dB) 100 75
Iq per channel(Max)(mA) 2.8 0.5
Package Group SOIC|8,SOT-23-THIN|8,TSSOP|8,VSSOP|8,WSON|8 SOIC|8,SOT-23-THIN|8,TSSOP|8,VSSOP|8
Total supply voltage(Max)(+5V=5, +/-5V=10) 40 36
Slew rate(Typ)(V/us) 32 0.5
Input common mode headroom (to positive supply)(Typ)(V) 0 -1.5
GBW(Typ)(MHz) 10.6 1.2
Vn at 1 kHz(Typ)(nV/rtHz) 7 40
CMRR(Typ)(dB) 115 94
Package size mm2 mm2
Input common mode headroom (to negative supply)(Typ)(V) 0 0
Vos (offset voltage @ 25 C)(Max)(mV) 1 3
Offset drift(Typ)(uV/C) 0.25 3.5
Output swing headroom (to negative supply)(Typ)(V) 0.048 0.005
Number of channels(#) 2 2
Iq per channel(Typ)(mA) 2.4 0.3
IOH(max)(mA) -7.8
IOL(max)(mA) 7.8
Supply current(max)(A) 2
Supply voltage(max)(V) 6
Supply voltage(min)(V) 2
Technology family HCS
Control interface 3xPWM,6xPWM,tSPI
Peak output current(A) 5 10
RDS(ON) (HS + LS)(m) 200
Vs ABS(max)(V) 24
Vs(min)(V) 3
Channel input logic CMOS,TTL
Driver configuration Single
Fall time(ns) 4
Input VCC(max)(V) 26
Input VCC(min)(V) 4.5
Input negative voltage(V) -10
Input threshold CMOS,TTL
Power switch IGBT,MOSFET
Propagation delay time(s) 0.017
Rise time(ns) 5
Undervoltage lockout(typ)(V) 4
Input bias current(Max)(pA) 35000