TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:60W; DC Collector Current:3A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:-; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:3A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:30; No. of Transistors:1; Power Dissipation Ptot Max:60W; Termination Type:Through Hole; Voltage Vcbo:60V

TRANSISTOR, DARLINGTON TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:-; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Power Dissipation Ptot Max:62.5W; Transistor Type:Power Darlington; Voltage Vcbo:60V

TRANSISTOR, DARLINGTON TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Power Dissipation Ptot Max:62.5W; Transistor Type:Power Darlington

N CHANNEL MOSFET 160V 8A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:160V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; No. of Pins:3Pins;RoHS Compliant: Yes

P CHANNEL MOSFET -160V 8A TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:-160V; On Resistance Rds(on):750mohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-1.5V; Product Range:-;RoHS Compliant: Yes

MOSFET AUDIO P CH 200V 16A TO-264; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:250W; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:-16A; Voltage Vgs Max:-20V

DIODE HI-REL 100V 0.3A DLCC2; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:75V; Forward Current If(AV):100mA; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:5ns; Forward Surge Current Ifsm Max:2.5A; Operating Temperature Max:200°C; Diode Case Style:DLCC2; No. of Pins:2Pins; Packaging:Each; Product Range:1N664 Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jun-2015); Diode Type:Switching; MSL:MSL 1 - Unlimited; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C

Silicon Small Signal N-Channel JEFT

Small Signal N–Channel J–FET in A Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications

Small Signal N–Channel J–FET in A Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications