N CHANNEL MOSFET 160V 8A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:160V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; No. of Pins:3Pins;RoHS Compliant: Yes

P CHANNEL MOSFET -160V 8A TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:-160V; On Resistance Rds(on):750mohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-1.5V; Product Range:-;RoHS Compliant: Yes

MOSFET AUDIO P CH 200V 16A TO-264; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:250W; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:-16A; Voltage Vgs Max:-20V

DIODE HI-REL 100V 0.3A DLCC2; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:75V; Forward Current If(AV):100mA; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:5ns; Forward Surge Current Ifsm Max:2.5A; Operating Temperature Max:200°C; Diode Case Style:DLCC2; No. of Pins:2Pins; Packaging:Each; Product Range:1N664 Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jun-2015); Diode Type:Switching; MSL:MSL 1 - Unlimited; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C

TRANS DARL NPN 115V 12A TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:-; Power Dissipation Pd:125W; DC Collector Current:12A; DC Current Gain hFE:1000hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015)

THYRISTOR 0.8A 60V TO-92; Peak Repetitive Off-State Voltage Vdrm:60V; Gate Trigger Current Max Igt:500µA; Current It av:0.32A; On State RMS Current IT(rms):0.8A; Thyristor Case Style:TO-92; No. of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:8A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:1V; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Itsm:7A; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Repetitive Reverse Voltage Vrrm Max:60V; Termination Type:Through Hole; Thyristor Type:Thyristor

MOSFET, N TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:TO-204AA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:4MHz; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:4A; Device Marking:BDT95; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:4MHz; Gain Bandwidth ft Typ:4MHz; Hfe Min:20; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:60W; DC Collector Current:3A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:3A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.5kHz; Gain Bandwidth ft Typ:7MHz; Hfe Min:30; No. of Transistors:1; Power Dissipation Ptot Max:60W; Termination Type:Through Hole; Voltage Vcbo:100V

TRANSISTOR, NPN, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:8MHz; Power Dissipation Pd:150W; DC Collector Current:40A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-247; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):600mV; Continuous Collector Current Ic Max:30A; Current Ic Continuous a Max:30A; Current Ic hFE:40A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:8MHz; Gain Bandwidth ft Typ:8MHz; Hfe Min:10; No. of Transistors:1; Power Dissipation Ptot Max:150W; Termination Type:Screw