The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC534LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC534LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC734 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734 integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC608LC4 is a high dynamic range GaAspHEMT MMIC Medium Power Amplifier housed in aleadless ?Pb free? SMT package. The amplifier hastwo modes of operation: high gain mode (Vpd pinshorted to ground); and low gain mode (Vpd pin leftopen). The electrical specifications in the table beloware shown for the amplifier operating in high gainmode. Operating from 9.5 to 11.5 GHz, the amplifierprovides 29.5 dB of gain, +27.5 dBm of saturatedpower and 23% PAE from a +5V supply voltage.Noise figure is 6 dB while output IP3 is +33 dBm. TheRF I/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC608LC4 eliminates theneed for wire bonding, allowing use of surface mountmanufacturing techniques.Applications? Point-to-Point Radios? Point-to-Multi-Point Radios? Military End-Use

The HMC542BLP4E is a broadband 6-bit GaAs IC digital attenuator with a CMOS compatible serial to parallel driver in low cost leadless surface mount package. This serial control digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 4 GHz, the insertion loss is 1.7 dB and the attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.25 dB typical step error with an IIP3 of +50 dBm. Six bit serial control words are used to select each attenuation state. A single VCC bias of +5V is required.APPLICATIONS Cellular/PCS/3G Infrastructure ISM, MMDS, WLAN, WiMAX, & WiBro Microwave Radio & VSAT Test Equipment and Sensors

The HMC646LP2(E) is an SPDT switch in a leadless DFN surface mount plastic package for use in transmit / receive and LNA protection applications which require very low distortion and high power handling of up to 40 watts with less than 10% duty cycle. This robust switch can control signals from 100 - 2100 MHz* and is ideal for TD-SCDMA / 3G repeaters, PMR, automotive telematics, and satellite subscriber terminal applications. The design provides exceptional P0.1 dB of +46 dBm and +74 dBm IIP3 on the Transmit (Tx) port. The failsafe topology provides a low loss path from Tx to RFC, when no DC power is available.APPLICATIONS LNA Protection & T/R Switching TD-SCDMA / 3G Infrastructure Satellite Subscriber Terminals Private Mobile Radio & Public Safety Handsets Automotive Telematics

The HMC652LP2E / 653LP2E / 654LP2E / 655LP2E are a line of wideband fixed value SMT 50 Ohm matched attenuators which offer attenuation levels of 2, 3, 4 and 6 dB respectively. These passive attenuators are ideal for military, test equipment, and other wideband applications where extremely flat attenuation, and excellent VSWR vs. frequency are required.These wideband attenuators handle up to +25 dBm of input power, and are compatible with high volume surface mount manufacturing techniques.APPLICATIONS Fiber Optics Microwave Radio Military & Space Test & Measurement Scientific Instruments RF/Microwave Circuit Prototyping

The HMC636ST89(E) is a GaAs PHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components. The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness.Applications Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio?

The ADMV1550 is a general-purpose, double balanced mixer in a leadless, RoHS compliant, surface-mount technology (SMT) package that can be used as an upconverter or down-converter between 15 GHz and 67 GHz. The wide bandwidth from 0 GHz to 20 GHz on the intermediate frequency (IF) port allows flexible frequency planning to avoid spurious products. This mixer is fabricated in a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC) process and requires no external components or matching circuitry. The ADMV1550 provides excellent local oscillator (LO) to radio frequency (RF) and LO to IF suppression due to optimized balun structures. The mixer operates with an LO amplitude above 15 dBm. The RoHS compliant ADMV1550 eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques.APPLICATIONSMicrowave and very small aperture terminal (VSAT) radiosTest equipmentMilitary electronic warfare (EW)Electronic countermeasure (ECM)Command, control, communications, and intelligence (C3I)