The HMC194AMS8E is a low-cost SPDT switch in an 8-lead MSOP packages for use in applications which require high isolation between two RF paths. The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC cur- rents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when ?OFF?.APPLICATIONS Cellular/PCS Base Stations Portable Wireless MMDS & WirelessLAN

The HMC443LP4(E) is an active miniature x4 frequency multiplier utilizing InGaP GaAs HBT technology in 4x4 mm leadless surface mount package. Power output is +4 dBm typical from a 5V supply voltage and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is >25 dBc typical with respect to output signal level. The low additive SSB phase noise of -142 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC443LP4(E) is ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Fiber Optic? Point-to-Point Radios? Military Radar

The HMC372LP3 & HMC372LP3E are GaAs pHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC617LP3(E).Applications GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio

The HMC487LP5E is a high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifiers housedin leadless 5 x 5 mm surface mount packages.Operating from 9 to 12 GHz, the amplifier provides20 dB of gain, +33 dBm of saturated power and 20%PAE from a +7V supply voltage. Output IP3 is +36 dBmtypical. The RF I/Os are DC blocked and matched to 50Ohms for ease of use. The HMC487LP5E eliminatesthe need for wire bonding, allowing use of surfacemount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use

The HMC6380LC4B is a wideband MMIC VoltageControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator?s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +23V. The HMC6380LC4B VCOoperates from a single +5V supply, consumes only75 mA of current, and is housed in a RoHS compliantSMT package. This wideband VCO uniquely combinesthe attributes of ultra small size, low phase noise, lowpower consumption, and wide tuning range.Applications Industrial/Medical EquipmentMeasurement EquipmentSatcomMilitary Radar, EW, & ECM

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC515LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC515LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC734 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734 integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC608LC4 is a high dynamic range GaAspHEMT MMIC Medium Power Amplifier housed in aleadless ?Pb free? SMT package. The amplifier hastwo modes of operation: high gain mode (Vpd pinshorted to ground); and low gain mode (Vpd pin leftopen). The electrical specifications in the table beloware shown for the amplifier operating in high gainmode. Operating from 9.5 to 11.5 GHz, the amplifierprovides 29.5 dB of gain, +27.5 dBm of saturatedpower and 23% PAE from a +5V supply voltage.Noise figure is 6 dB while output IP3 is +33 dBm. TheRF I/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC608LC4 eliminates theneed for wire bonding, allowing use of surface mountmanufacturing techniques.Applications? Point-to-Point Radios? Point-to-Multi-Point Radios? Military End-Use