The HMC487LP5E is a high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifiers housedin leadless 5 x 5 mm surface mount packages.Operating from 9 to 12 GHz, the amplifier provides20 dB of gain, +33 dBm of saturated power and 20%PAE from a +7V supply voltage. Output IP3 is +36 dBmtypical. The RF I/Os are DC blocked and matched to 50Ohms for ease of use. The HMC487LP5E eliminatesthe need for wire bonding, allowing use of surfacemount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use

The HMC450QS16G(E) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.6 - 2.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G(E) an ideal linear driver for Cellular, PCS & 3G applications.Applications GSM, GPRS, & Edge? CDMA & WCDMA? Base Stations & Repeaters

The HMC6380LC4B is a wideband MMIC VoltageControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator?s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +23V. The HMC6380LC4B VCOoperates from a single +5V supply, consumes only75 mA of current, and is housed in a RoHS compliantSMT package. This wideband VCO uniquely combinesthe attributes of ultra small size, low phase noise, lowpower consumption, and wide tuning range.Applications Industrial/Medical EquipmentMeasurement EquipmentSatcomMilitary Radar, EW, & ECM

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC534LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC534LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC734 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734 integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC608LC4 is a high dynamic range GaAspHEMT MMIC Medium Power Amplifier housed in aleadless ?Pb free? SMT package. The amplifier hastwo modes of operation: high gain mode (Vpd pinshorted to ground); and low gain mode (Vpd pin leftopen). The electrical specifications in the table beloware shown for the amplifier operating in high gainmode. Operating from 9.5 to 11.5 GHz, the amplifierprovides 29.5 dB of gain, +27.5 dBm of saturatedpower and 23% PAE from a +5V supply voltage.Noise figure is 6 dB while output IP3 is +33 dBm. TheRF I/Os are DC blocked and matched to 50 Ohmsfor ease of use. The HMC608LC4 eliminates theneed for wire bonding, allowing use of surface mountmanufacturing techniques.Applications? Point-to-Point Radios? Point-to-Multi-Point Radios? Military End-Use

The HMC542BLP4E is a broadband 6-bit GaAs IC digital attenuator with a CMOS compatible serial to parallel driver in low cost leadless surface mount package. This serial control digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 4 GHz, the insertion loss is 1.7 dB and the attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.25 dB typical step error with an IIP3 of +50 dBm. Six bit serial control words are used to select each attenuation state. A single VCC bias of +5V is required.APPLICATIONS Cellular/PCS/3G Infrastructure ISM, MMDS, WLAN, WiMAX, & WiBro Microwave Radio & VSAT Test Equipment and Sensors

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment