TK65G10N1
Toshiba Electronics Europe
Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration:
TPH1R204PL
Toshiba Electronics Europe
Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 132 W, Transistor Configuration:
RN2101(F)
Toshiba Electronics Europe
Toshiba RN2101(F) PNP Digital Transistor, 50 V, 3-Pin ESM, Mounting Type: Surface Mount, Transistor
NSVBC143JPDXV6T5G
onsemi
PNP BRT with R1/R2 = 2.2/47k and NPN BRT with R1/R2 = 47/47k Complementary Bias Resistor Transistors SOT-563 Dual Complimentary BRT AEC-Q101.revD Qualified
NST1601CLTWG
onsemi
Bipolar Transistor -160V, -1.5A PNP Low VCE(sat) PNP Single for consumer / industrial
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 2383-2N5679-ND | 0 | 20 | $0.50 | $0.50 | $0.50 | $0.50 |
40922
Nexperia
Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 80V 1A 155MHz 500mW Surface Mount 6-TSOP
| Distributor | SKU | Stock | MOQ | 1 | 10 | 50 | 100 | 1,000 | 10,000 |
|---|---|---|---|---|---|---|---|---|---|
| Digi-Key | 1727-7829-1-ND | 21823 | 1 | $0.39 | $0.31 | $0.31 | $0.21 | $0.12 | $0.10 |
BFG591.
NXP Semiconductors N.V.
TRANSISTOR, NPN RF SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V;
2N6059.
Multicomp
DARLINGTON TRANSISTOR, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V;