The HMC582LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure.Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC512LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios  Point-to-Multi-Point Radios Test Equipment & Industrial Controls  SATCOM Military End-Use

The HMC513LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC513LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by- 4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio  Test Equipment & Industrial Controls  Military End-Use

The HMC515LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC515LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio  Point-to-Point/Multi-Point Radio  Test Equipment & Industrial Controls  Military End-Use

The ADF4360-2 is a fully integrated integer-N synthesizerand voltage-controlled oscillator (VCO). The ADF4360-2 isdesigned for a center frequency of 2000 MHz. In addition, adivide-by-2 option is available, whereby the user gets an RFoutput of between 925 MHz and 1085 MHz.Control of all the on-chip registers is through a simple 3-wireinterface. The device operates with a power supply rangingfrom 3.0 V to 3.6 V and can be powered down when not in use.Applications Wireless handsets (DECT, GSM, PCS, DCS, WCDMA) Test equipment Wireless LANs CATV equipment

Real Time Clock

Real Time Clock 3V/5V RTC

Continuous Rate 10 Mbps to 2.7 Gbps Clock and Data Recovery IC Features: Serial data input: 10 Mbps to 2.7 Gbps Exceeds ITU-T jitter specifications Integrated limiting amplifier 5 mV p-p sensitivity (ADN2817 only) Adjustable slice level: ±100 mV (ADN2817 only) Proprietary dual-loop clock recovery architecture Programmable LOS detect (ADN2817 only) Integrated PRBS generator and detector No reference clock required Loss of lock indicator Supports double data rate BERMON or sample phase adjust options Rate selectivity without the use of a reference clock I2C interface to access optional features Single-supply operation: 3.3 V Low power 650 mW (ADN2817) 600 mW (ADN2818) 5 mm × 5 mm 32-lead LFCSP

6.2 GHz Fractional-N Frequency Synthesizer Features: RF bandwidth to 6.2 GHz 2.7 V to 3.3 V power supply Separate VP allows extended tuning voltage Programmable fractional modulus Programmable charge pump currents 3-wire serial interface Digital lock detect Power-down mode Pin compatible with the ADF4110, ADF4111, ADF4112, ADF4113, ADF4106, ADF4153, and ADF4154 frequency synthesizers Programmable RF output phase Loop filter design possible with ADIsimPLL Cycle slip reduction for faster lock times

The ADN2812 provides the receiver functions of quantization, signal level detect, and clock and data recovery for continuous data rates from 12.3 Mb/s to 2.7 Gb/s. The ADN2812 automatically locks to all data rates without the need for an external reference clock or programming. All SONET jitter requirements are met, including jitter transfer, jitter generation, and jitter tolerance. All specifications are quoted for ?40?C to +85?C ambient temperature, unless otherwise noted. This device, together with a PIN diode and a TIA preamplifier, can implement a highly integrated, low cost, low power fiber optic receiver. The receiver front end, loss of signal (LOS) detector circuit indicates when the input signal level has fallen below a user-adjustable threshold. The LOS detect circuit has hysteresis to prevent chatter at the output. The ADN2812 is available in a compact 5 mm ? 5 mm 32-lead lead frame chip scale package (LFCSP).ApplicationsSONET OC-1/OC-3/OC-12/OC-48 and all associated FEC rates Fibre Channel, 2? Fibre Channel, GbE, HDTV WDM transponders Regenerators/repeaters Test equipment Broadband cross-connects and routers