The HMC582LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure.Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC739 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC739 integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCOs phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +8 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios/LMDS VSAT

VCO Oscillators VCO SMT with Fo/2, 7.8 - 8.8 GHz

VCO Oscillators VCO w/ Fo/2 & Div/4, 8.45 - 9.55 GHz

VCXO Oscillators 106.25MHz VCXO

VCXO Oscillators 61.44MHz VCXO

VCO GAAS RF/2 12.18-13.13GHZ

VCO, W/BUFFER AMP, 5.6-6.8GHZ, MSOP-8 ROHS COMPLIANT: YES

VCO Oscillators VCO with Divide-by-4, 10.5 - 12.2 GHz

VCO, W/BUFFER AMP, 6.1GHZ-6.72GHZ, QFN24;