Demonstration circuit 2041A is a regulated output voltage switched-capacitor step-down power supply featuring the 50mA output LTC3255. When VIN exceeds VOUT by more the 2:1, a 2:1 step-down architecture is used to efficiently regulate the output voltage, reducing the input current needed. As VIN reduces below twice VOUT, the LTC3255 will automatically switch to 1:1 mode. The demo board has a 4V to 48V input votlage range and a jumper-selectable output voltage than can be set to 2.5V, 3.3V, 5V, 12V or a user-defined value. The LTC3255 also has an integrated shunt regulator allowing it to provide a regulated output from a 4mA to 20mA current loop. The LTC3255 is a robust device that can survive -52V/60V reverse polarity input supplies, and features short-circuit protection and overtemperature protection.

Demonstration circuit 741 is an ultralow dropout voltage supply using the 300mA output current LTC3025 linear regulator in the small 2mm x 2mm 6-Pin DFN package. The DC741 has an input voltage range from 0.9V to 5.5V and a jumper-selectable output voltage of 0.8V, 1.2V, 1.5V, 1.8V or a user-defined value between 0.4V and 3.6V. The 0.4V reference of the LTC3025 allows the DC741 to supply power to very low voltage applications. The DC741 is also an excellent choice for post-regulation of step-down switching regulators, creating a high efficiency low-noise supply. The DC741 comes assembled with small ceramic capacitors, showing the LTC3025's ability to maintain stability with ceramic output capacitors.

DC756A: Demo Board for the LTC4150 Coulomb Counter/Battery Gas Gauge.

DC852A: Demo Board for the LTC4354 Negative Voltage Diode-OR Controller and Monitor.

Demonstration circuit 856A is a 500mA, 1.25MHz Synchronous Boost Converter featuring the LTC3427EDC. The demo circuit demonstrates a DC/DC boost converter, with a 500mA switch current limit, providing 3.3V at 180mA from a 1.8V to 3.6V input voltage.

Demonstration circuit 857 features the LT3481EMSE and LT3481EDD in two step-down converter circuits, one configured for high efficiency and the other for small size. The high efficiency circuit switching at 800kHz is designed for 3.3V/2A output from a 4.5V to 34V input. The small size circuit switching at 2MHz demonstrates the LT3481’s ability to operate with a small inductor and output capacitor. It is designed for 5V output from an 8.5V to 22V input. The wide input range of the LT3481 allows a variety of input sources. The typical sources are automotive batteries, wall adaptors and industrial supplies. The current mode control scheme creates fast transient response and good loop stability. In addition, the LT3481’s integrated boost diode reduces the parts count. The low ripple Burst Mode® Operation of LT3481 not only allows the circuit to have high efficiency over a broad current range but also provides the low output ripple at light load conditions.

The ADuM3123 is a 4.0 A isolated, single channel driver that employs Analog Devices, Inc.?s?iCoupler? technology to provide precision isolation. The ADuM3123 provides 3000 VRMS isolation in the narrow body 8-lead SOIC package. ?Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers. ?The ADuM3123 operate with an input supply ranging from 3.0 V to 5.5 V, providing compatibility with lower voltage systems. ?In comparison to gate drivers employing high voltage level translation methodologies, the ADuM3123 offer the benefit of true, galvanic isolation between the input and the output. The output may be continuously operated up to 380 V rms relative to the input.?As a result, the ADuM3123 provide reliable control over the switching characteristics of IGBT/MOSFET configurations over a wide range of positive or negative switching voltages.??Applications Switching power supplies? Isolated IGBT/MOSFET gate drives? Industrial inverters?

The ADuM4120/ADuM4120-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc., iCoupler? technology to provide precision isolation. The ADuM4120/ADuM4120-1provide 5 kV rms isolation in the 6-lead wide body SOIC package with increased creepage. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics, such as the combination of pulse transformers and gate drivers.The ADuM4120/ADuM4120-1 operate with input supplies ranging from 2.5 V to 6.5 V, providing compatibility with lowervoltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4120/ADuM4120-1 offer the benefit of true, galvanic isolation betweenthe input and the output.Options exist for models with and without an input glitch filter. The glitch filter helps reduce the chance of noise on the input pintriggering an output.As a result, the ADuM4120/ADuM4120-1 provide reliable control over the switching characteristics of insulated gatebipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of switching voltages.Applications Switching power supplies? IGBT/MOSFET gate drivers Industrial inverters? Gallium nitride (GaN)/silicon carbide (SiC) power devices

The ADuM4136 is a single-channel gate driver specifically optimized for driving insulated gate bipolar transistors (IGBTs). Analog Devices, Inc., iCoupler? technology provides isolation between the input signal and the output gate drive.Operation with unipolar or bipolar secondary supplies is possible, allowing negative gate drive if needed.The Analog Devices chip scale transformers also provide isolated communication of control information between the high voltage and low voltage domains of the chip. Information on the status of the chip can be read back from dedicated outputs. Control of resetting the device after a fault on the secondary side is performed on the primary side of the device.Integrated onto the ADuM4136 is a desaturation detection circuit that provides protection against high voltage short-circuit IGBT operation. The desaturation protection contains noise reducing features such as a 312 ns (typical) masking time after a switching event to mask voltage spikes due to initial turn-on. An internal 537 ?A (typical) current source allows low device count, and the internal blanking switch allows the addition of an external current source if more noise immunity is needed.The secondary UVLO is set to 12 V with common IGBT threshold levels taken into consideration.Applications MOSFET/IGBT gate drivers Photovoltaic (PV) inverters Motor drives Power supplies

The ADuM4221/ADuM4221-1/ADuM4221-2 are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc., iCoupler? technology to provide independent and isolated high-side and low-side outputs. The ADuM4221/ADuM4221-1/ADuM4221-2 provide 5700 V rms isolation in an increased creepage wide body, 16-lead SOIC_IC. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221/ADuM4221-1/ADuM4221-2 offer the benefit of true, galvanic isolation between the input and each output.The ADuM4221/ADuM4221-1/ADuM4221-2 each have built in overlap protection and allow dead time adjustment. A single resistor between the dead time pin (DT) and the GND1 pin sets the dead time on the secondary side between the high-side and the low-side outputs.An internal thermal shutdown (TSD) sets outputs low if the internal temperature on the ADuM4221/ADuM4221-1/ADuM4221-2 exceeds the TSD temperature. As a result, the ADuM4221/ADuM4221-1/ADuM4221-2 provide reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.Applications Switching power supplies Isolated IGBT/MOSFET gate drives Industrial inverters Gallium nitride (GaN)/silicon carbide (SiC) compatible1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.