The HMC694 is a GaAs MMIC PHEMT analog variable gain amplifier die which operates between 6 and 17 GHz. Ideal for microwave radio applications, the amplifier provides up to 24 dB of gain, output P1dB of up to 22 dBm, and up to 30 dBm of Output IP3 at maximum gain, while requiring only 170 mA from a +5V supply. A gate bias (Vctrl) is provided to allow variable gain control up to 23 dB. Gain flatness is excellent from 6 to 17 GHz, making the HMC694 ideal for EW, ECM and radar applications.The HMC694 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size and no external matching. All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bond of minimal length 0.31 mm (12 mils).Applications Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment

The ADL5356 uses a highly linear, doubly balanced, passive mixer core along with integrated RF and local oscillator (LO) balancing circuitry to allow single-ended operation. The ADL5356 incorporates the RF baluns, allowing for optimal performance over a 1200 MHz to 2500 MHz RF input frequency range. Performance is optimized for RF frequencies from 1700 MHz to 2500 MHz using a low-side LO and RF frequencies from 1200 MHz to 1700 MHz using a high-side LO. The balanced passive mixer arrangement provides good LO-to-RF leakage, typically better than −35 dBm, and excellent intermodulation performance. The balanced mixer core also provides extremely high input linearity, allowing the device to be used in demanding cellular applications where in-band blocking signals may otherwise result in the degradation of dynamic performance. A high linearity IF buffer amplifier follows the passive mixer core to yield a typical power conversion gain of 8.2 dB and can be used with a wide range of output impedances.The ADL5356 provides two switched LO paths that can be used in TDD applications where it is desirable to ping-pong between two local oscillators. LO current can be externally set using a resistor to minimize dc current commensurate with the desired level of performance. For low voltage applications, the ADL5356 is capable of operation at voltages down to 3.3 V with substantially reduced current. Under low voltage operation, an additional logic pin is provided to power down (<300 μA) the circuit when desired.The ADL5356 is fabricated using a BiCMOS high performance IC process. The device is available in a 6 mm × 6 mm, 36-lead LFCSP and operates over a −40°C to +85°C temperature range. An evaluation board is also available.ApplicationsCellular base station receiversTransmit observation receiversRadio link downconverters

RF Amplifier GaAs HEMT MMIC

RF Amplifier 6-Bit dig VGA 700 - 1200 MHz

RF Amplifier 9-14GHz 4Watt pow amp

Modulator/Demodulator SiGe Direct Mod , 250 - 3800 MHz

Phase Detectors/Shifters

Dual 600MHz to 1.7GHz High Dynamic Range Downconverting Mixer Features:Conversion Gain: 8.7dB at 900MHzIIP3: 26dBm at 900MHzNoise Figure: 9.7dB at 900MHz15.6dB NF Under 5dBm BlockingHigh Input P1dB53dB Channel Isolation at 900MHz1.3W Power Consumption at 3.3VLow Power Mode for <0.8W ConsumptionEnable Pins for Each Channel50Ω Single-Ended RF and LO InputsLO Input Matched In All Modes0dBm LO Drive LevelSmall Package and Solution Size–40°C to 105°C Operation

4GHz to 6GHz High Dynamic Range Downconverting Mixer Features:Conversion Gain: 7.4dB at 5250MHzIIP3: 25.9dBm at 5250MHzNoise Figure: 11.3dB at 5250MHzHigh Input P1dBIF Bandwidth Up to 1GHz640mW Power ConsumptionShutdown Pin50Ω Single-Ended RF and LO Inputs+2dBm LO Drive LevelHigh LO-RF and LO-IF Isolation–40°C to 105°C Operation (TC)Small Solution Size16-Lead (4mm × 4mm) QFN package

30 MHz TO 2200 MHz Quadrature Modulator Features: Output frequency range: 30 MHz to 2200 MHz 1 dB output compression: 11 dBm at 350 MHz Noise floor: –159 dBm/Hz at 350 MHz Sideband suppression: −50 dBc at 350 MHz Carrier feedthrough: −46 dBm at 350 MHz Single supply: 4.75 V to 5.5 V 24-lead, RoHS-compliant, LFCSP with exposed pad