The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.Applications Point-to-Point Radios Point-to-Multi-Point Radios & VSAT LO Driver for Mixers Military & Space

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

RF MIXERS/MULTIPLIERS;

RF DETECTORS;

RF DETECTORS;

RF ATTENUATORS - FIXED / VARIABLE;

HOBBY / EDUCATION ANALOG DEV KITS;

RF / IF ANALOG DEVELOPMENT KITS;

RF / IF ANALOG DEVELOPMENT KITS;

RF AMP, 1GHZ-20GHZ, SDLVA, 59DB;