The HMC316MS8(E) is a miniature double balanced mixer in 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements planar on chip balun transformers, and requires no external components. The mixer can be used as an upconverter, downconverter, or modulator. At mid-band the mixer provides 7.5 dB conversion loss and +25 dBm IIP3 with LO drive levels of +19 dBm. The design was optimized for low cost high volume applications where high converter linearity is required.Applications Cellular Basestations Cable Modems Fixed Wireless Access Systems WiMAX

The HMC400MS8(E) is a high dynamic range passive MMIC mixer in plastic surface mount 8 lead Mini Small Outline Package (MSOP) covering 1.7 to 2.2 GHz. Excellent input IP3 performance of +36 dBm for down conversion and +29 dBm for up conversion is provided for 2.5G & 3G GSM/CDMA based UMTS or PCS applications at an LO drive of +17dBm. With a 1dB compression of +21 dBm, the RF port will accept a wide range of input signal levels. Conversion loss is 8.5dB typical and LO isolations are maintained at 22 to 33 dB.This miniature single-ended monolithic GaAs FET mixer does not require any external components or bias. The 50 to 300 MHz IF frequency response will satisfy many UMTS/PCS transmit or receive frequency plans configured for low side LO. The HMC400MS8(E) input IP3 performance coupled with its high P1dB rivals traditional active FET mixers while offering a much smaller 14.8mm² standard IC footprint and no DC bias.Applications GSM, GPRS & EDGE CDMA & W-CDMA Cable Modem Termination Systems

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications UNII HiperLAN

The HMC465LP5(E) is a GaAs MMIC PHEMT DistributedDriver Amplifier packaged in leadless 5x5mm surface mount package which operate betweenDC and 20 GHz. The amplifier provides 15 dB of gain,3 dB noise figure and +25 dBm of saturated outputpower while requiring only 160 mA from a +8V supply.Gain flatness is excellent at ±0.5 dB as well as ±4deg deviation from linear phase from DC - 10 GHzmaking the HMC465LP5(E) ideal for OC192 fiberoptic LN/MZ modulator driver amplifiers as well astest equipment applications. The HMC465LP5(E)amplifiers I/Os are internally matched to 50 Ohms.Applications OC192 LN/MZ modulator driver Microwave radio andVSAT Test instrumentation Military EW, ECM & C³I

The HMC465LP5(E) is a GaAs MMIC PHEMT DistributedDriver Amplifier packaged in leadless 5x5mm surface mount package which operate betweenDC and 20 GHz. The amplifier provides 15 dB of gain,3 dB noise figure and +25 dBm of saturated outputpower while requiring only 160 mA from a +8V supply.Gain flatness is excellent at ±0.5 dB as well as ±4deg deviation from linear phase from DC - 10 GHzmaking the HMC465LP5(E) ideal for OC192 fiberoptic LN/MZ modulator driver amplifiers as well astest equipment applications. The HMC465LP5(E)amplifiers I/Os are internally matched to 50 Ohms.Applications OC192 LN/MZ modulator driver Microwave radio andVSAT Test instrumentation Military EW, ECM & C³I

The HMC471MS8G(E) is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifier covering DC to 5 GHz. These versatile products contain two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90° hybrids to create a high linearity driver amplifier.Each amplifier in the HMC471MS8G(E) offers 20 dB of gain, +20 dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 80 mA from a single positive supply. The combined dual amplifier circuit delivers up to +21 dBm P1dB with +36 dBm OIP3 for specific application bands through 4 GHz.Applications Cellular / PCS / 3G  Fixed Wireless & WLAN  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment

The HMC474 devices are general-purpose SiGe, Heterojunction Bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 6 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages with up to 10 dBm output power. The HMC474 devices offer 15 dB or 15.5 dB of gain with 20 dBm or 22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast (DBS) Microwave radio and test equipment 

The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 6 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +12 dBm output power. The HMC476SC70(E) offers 20 dB of gain with a +24 dBm output IP3 at 850 MHz while requiring only 35 mA from a singlepositive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio and Test Equipment

The HMC481ST89 & HMC481ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481ST89(E) offer 20 dB of gain with a +33 dBm output IP3 at 1 GHz while requiring only 79 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio & Test Equipment

The HMC482ST89(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +24 dBm output power. The Darlington feedback pair results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G  Fixed Wireless, WLAN & WiMAX  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment