The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 6 GHz. This industry standard SC70 packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +12 dBm output power. The HMC476SC70(E) offers 20 dB of gain with a +24 dBm output IP3 at 850 MHz while requiring only 35 mA from a singlepositive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio and Test Equipment

The HMC481ST89 & HMC481ST89E are SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifiers covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481ST89(E) offer 20 dB of gain with a +33 dBm output IP3 at 1 GHz while requiring only 79 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G Fixed Wireless and WLAN CATV, Cable Modem, and Direct Broadcast Satellite (DBS) Microwave Radio & Test Equipment

The HMC482ST89(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +24 dBm output power. The Darlington feedback pair results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G  Fixed Wireless, WLAN & WiMAX  CATV, Cable Modem & DBS  Microwave Radio & Test Equipment

The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB.Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

The HMC591LP5(E) is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 9.5 GHz. The amplifier provides 18 dB of gain, +33 dBm of saturated power, and 19% PAE from a +7V supply. This 50 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB.Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

The HMC767LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) Frequency Synthesizer with an integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is DC to 350 MHz while the advanced delta-sigma modulator design in the fractional synthesizer allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. In addition, the HMC767LP6CE offers frequency sweep and modulation features, external triggering, double-buffering, exact frequency control, phase modulation and more. The HMC767LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Microwave Point-To-Point Radios Test Equipment & Industrial Control Military End-Use Phased Array Applications FMCW Radar Systems

The HMC263LP4E is a GaAs MMI C Low NoiseAmplifier (LNA) which covers the frequency rangeof 24 to 36 GHz and is housed in a leadless plasticSMT package. The HMC263LP4E utilizes a GaAsPHEMT process offering 20 dB gain from a singlebias supply of + 3V @ 58 mA with a noise figure of2.2 dB. The HMC263LP4E may be used in conjunctionwith HMC264LC3B or HMC265LM 3 mixers torealize a millimeterwave system receiver. The RF I/Osare DC blocked and matched to 50 Ohms requiring noexternal components.Applications Millimeterwave Point-to-Point Radios LMDS VSAT SATCOM

The HMC311ST89(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16.5 dBm output power. The HMC311ST89(E) offers 16 dB of gain and an output IP3 of +31.5 dBm while requiring only 54 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G  Fixed Wireless & WLAN  CATV & Cable Modem  Microwave Radio

The HMC374(E) is a general purpose broad band Low Noise Amplifier (LNA) for use in the 0.3 - 3.0 GHz frequency range. The LNA provides 15 dB of gain and a 1.5 dB noise figure from a single positive supply of +2.75 to +5.5V. The low noise figure coupled with a high P1dB (22 dBm) and high OIP3 (37 dBm) make this part ideal for cellular applications. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost SOT26 package that occupies only 0.118” x 0.118”.Applications Cellular/PCS/3G  WCS, MMDS & ISM  Fixed Wireless & WLAN  Private Land Mobile Radio