The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. The P1dB output power of +12 dBm enables the LNA to function as a LO driver for many of Hittite’s balanced, I/Q and image reject mixers. The HMC1040LP 3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity microwave radios and VSAT applications.Applications Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems

The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. The P1dB output power of +12 dBm enables the LNA to function as a LO driver for many of Hittite’s balanced, I/Q and image reject mixers. The HMC1040LP 3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity microwave radios and VSAT applications.Applications Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems

The HMC1127 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 2 and 50 GHz. The amplifier provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a +5V supply. The HMC1127 amplifier I/Os are internally matched to 50 Ω facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONS Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics

The HMC410AMS8G(E) is a passive double balanced high IP3 mixer that operates between 9 and 15 GHz. The HMC410AMS8G(E) operates with LO drive levels between +13 dBm and +19 dBm, and provide 8 dB conversion loss across the entire specified frequency band. These mixers require no external components or bias.The HMC410AMS8G(E) is a replacement for the HMC410MS8G(E)Applications Long Haul Radio Platforms Microwave Radio VSAT

The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifiercan easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).Applications Telecom Infrastructure  Microwave Radio & VSAT  Military & Space  Test Instrumentation  Fiber Optics

The HMC463LP5(E) is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at 0.5 dB from 6 - 18 GHz making the HMC463LP5(E) ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5(E) LNA I/Os are internally matched to 50 Ohms and are internally DC blocked.Applications Telecom Infrastructure  Microwave Radio & VSAT  Military EW, ECM & C³I  Test Instrumentation  Fiber Optics

The HMC474 devices are general-purpose SiGe, Heterojunction Bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 6 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages with up to 10 dBm output power. The HMC474 devices offer 15 dB or 15.5 dB of gain with 20 dBm or 22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast (DBS) Microwave radio and test equipment 

The HMC478 devices are SiGe, heterojunction bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 4 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 17 dBm or 20 dBm output power. These amplifiers offer 22 dB or 23 dB of gain with 31 dBm, 32 dBm, or 33 dBm output IP3 at 850 MHz, while requiring only 62 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast satellite (DBS) Microwave radio and test equipment 

The HMC479 devices are SiGe, heterojunction bipolar transistor (HBT) gain block MMIC, SMT amplifiers covering dc to 5 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 21 dBm output power. The HMC479 amplifiers offer 15 dB of gain with a 33 dBm or 34 dBm output IP3 at 850 MHz, while requiring only 72 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature, while requiring a minimal number of external bias components.Applications Cellular/PCS/3G  Fixed wireless and WLAN  CATV, cable modem, and direct broadcast satellite (DBS)  Microwave radio and test equipment

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics