The AD8312 is a complete, low cost subsystem for the measurement of RF signals in the frequency range of 50 MHz to 3.5 GHz. It has a typical dynamic range of 45 dB and is intended for use in a wide variety of cellular handsets and other wireless devices. It provides a wider dynamic range and better accuracy than possible using discrete diode detectors. In particular, its temperature stability is excellent over the full operating range of −40°C to +85°C.Its high sensitivity allows measurement at low power levels, thus reducing the amount of power that needs to be coupled to the detector. It is essentially a voltage-responding device, with a typical signal range of 1.25 mV to 224 mV rms or −45 dBm to 0 dBm, referencing 50 Ω.For convenience, the signal is internally ac-coupled, using a 5 pF capacitor to a load of 3 kΩ in shunt with 1.3 pF. This high-pass coupling, with a corner at approximately 16 MHz, determines the lowest operating frequency. Therefore, the source may be dc grounded.The AD8312 output, VOUT, increases from close to ground to about 1.2 V because the input signal level increases from 1.25 mV to 224 mV. A capacitor may be connected between the VOUT and CFLT pins when it is desirable to increase the time interval over which averaging of the input waveform occurs.The AD8312 is available in a 6-ball, 1.0 mm × 1.5 mm, wafer-level chip scale package and consumes 4.2 mA from a 2.7 V to 5.5 V supply.Applications Cellular handsets (GSM, CDMA, WCDMA) RSSI and TSSI for wireless terminal devices Transmitter power measurement

The AD8364 is a true rms, responding, dual-channel RF powermeasurement subsystem for the precise measurement and controlof signal power. The flexibility of the AD8364 allows communicationssystems, such as RF power amplifiers and radio transceiverAGC circuits, to be monitored and controlled with ease. Operatingon a single 5 V supply, each channel is fully specified for operationup to 2.7 GHz over a dynamic range of 60 dB. The AD8364provides accurately scaled, independent, rms outputs of both RFmeasurement channels. Difference output ports, which measurethe difference between the two channels, are also available. Theon-chip channel matching makes the rms channel differenceoutputs extremely stable with temperature and process variations.The device also includes a useful temperature sensor with anaccurately scaled voltage proportional to temperature, specifiedover the device operating temperature range. The AD8364 canbe used with input signals having rms values from −55 dBm to+5 dBm referred to 50 Ω and large crest factors with noaccuracy degradation. Integrated in the AD8364 are two matched AD8362 channels(see the AD8362 data sheet for more information) with improvedtemperature performance and reduced log conformance ripple.Enhancements include improved temperature performance andreduced log-conformance ripple compared to the AD8362. On-chipwide bandwidth output operational amplifiers are connectedto accom-modate flexible configurations that support manysystem solutions.The device can easily be configured to provide four rmsmeasurements simultaneously. Linear-in-dB rms measurementsare supplied at OUTA and OUTB, with conveniently scaledslopes of 50 mV/dB. The rms difference between OUTA andOUTB is available as differential or single-ended signals atOUTP and OUTN. An optional voltage applied to VLVLprovides a common mode reference level to offset OUTP andOUTN above ground.The AD8364 is supplied in a 32-lead, 5 mm × 5 mm LFCSP, forthe operating temperature of –40°C to +85°C.Applications Wireless infrastructure power amplifier linearization/control Antenna VSWR monitor Gain and power control and measurement Transmitter signal strength indication (TSSI) Dual-channel wireless infrastructure radios

The AD8364 is a true rms, responding, dual-channel RF powermeasurement subsystem for the precise measurement and controlof signal power. The flexibility of the AD8364 allows communicationssystems, such as RF power amplifiers and radio transceiverAGC circuits, to be monitored and controlled with ease. Operatingon a single 5 V supply, each channel is fully specified for operationup to 2.7 GHz over a dynamic range of 60 dB. The AD8364provides accurately scaled, independent, rms outputs of both RFmeasurement channels. Difference output ports, which measurethe difference between the two channels, are also available. Theon-chip channel matching makes the rms channel differenceoutputs extremely stable with temperature and process variations.The device also includes a useful temperature sensor with anaccurately scaled voltage proportional to temperature, specifiedover the device operating temperature range. The AD8364 canbe used with input signals having rms values from −55 dBm to+5 dBm referred to 50 Ω and large crest factors with noaccuracy degradation. Integrated in the AD8364 are two matched AD8362 channels(see the AD8362 data sheet for more information) with improvedtemperature performance and reduced log conformance ripple.Enhancements include improved temperature performance andreduced log-conformance ripple compared to the AD8362. On-chipwide bandwidth output operational amplifiers are connectedto accom-modate flexible configurations that support manysystem solutions.The device can easily be configured to provide four rmsmeasurements simultaneously. Linear-in-dB rms measurementsare supplied at OUTA and OUTB, with conveniently scaledslopes of 50 mV/dB. The rms difference between OUTA andOUTB is available as differential or single-ended signals atOUTP and OUTN. An optional voltage applied to VLVLprovides a common mode reference level to offset OUTP andOUTN above ground.The AD8364 is supplied in a 32-lead, 5 mm × 5 mm LFCSP, forthe operating temperature of –40°C to +85°C.Applications Wireless infrastructure power amplifier linearization/control Antenna VSWR monitor Gain and power control and measurement Transmitter signal strength indication (TSSI) Dual-channel wireless infrastructure radios

RF Amplifier

The HMC474 devices are general-purpose SiGe, Heterojunction Bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 6 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages with up to 10 dBm output power. The HMC474 devices offer 15 dB or 15.5 dB of gain with 20 dBm or 22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast (DBS) Microwave radio and test equipment 

The HMC478 devices are SiGe, heterojunction bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 4 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 17 dBm or 20 dBm output power. These amplifiers offer 22 dB or 23 dB of gain with 31 dBm, 32 dBm, or 33 dBm output IP3 at 850 MHz, while requiring only 62 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast satellite (DBS) Microwave radio and test equipment 

The HMC479 devices are SiGe, heterojunction bipolar transistor (HBT) gain block MMIC, SMT amplifiers covering dc to 5 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 21 dBm output power. The HMC479 amplifiers offer 15 dB of gain with a 33 dBm or 34 dBm output IP3 at 850 MHz, while requiring only 72 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature, while requiring a minimal number of external bias components.Applications Cellular/PCS/3G  Fixed wireless and WLAN  CATV, cable modem, and direct broadcast satellite (DBS)  Microwave radio and test equipment

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

The HMC764LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) with an Integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is 100 kHz to 220 MHz while the advanced delta-sigma modulator design in the fractional PLL allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. The HMC764LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package. The output power is 15 dBm typical, making the HMC764LP6CE ideal for driving the LO port of many of Hittite’s Hi Linearity and I/Q mixer products.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Point-to-Point / Multi-Point Radio Test Equipment & Industrial Control Military End-Use Phased Array Applications

The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure.Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50Ω) or Type F (75Ω) connectors.Applications Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications