Integrated Dual RF Tx, Rx, and Observation Rx Features: Dual transmitters Dual receivers Dual input shared observation receiver Maximum receiver bandwidth: 200 MHz Maximum tunable transmitter synthesis bandwidth: 450 MHz Maximum observation receiver bandwidth: 450 MHz Fully integrated fractional-N RF synthesizers Fully integrated clock synthesizer Multichip phase synchronization for RF LO and baseband clocks JESD204B datapath interface Tuning range (center frequency): 75 MHz to 6000 MHz

RF Mixer Fundamental mix SMT, 6 - 26 GHz

The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

RF Amplifier lo Noise amp SMT 1.2 - 3.0 GHz

Integrated Dual RF Receiver Features: Dual receivers Maximum Receiver BW: 200 MHz Fully integrated, fractional-N, RF synthesizers Fully integrated clock synthesizer Multichip phase synchronization for RF LO and baseband clocks JESD204B datapath interface Tuneable range: 75 MHz to 6000 MHz

RF MIXER, 2 CHANNEL, 26.5GHZ, LCC-EP-24;

The HMC862A is a low noise, programmable frequency divider in a 3 mm × 3 mm, leadless, surface-mount package. The frequency divider, N, can be programmed to divide from 1, 2, 4, or 8 in the 0.1 GHz to 24 GHz input frequency range.The low phase noise, wide frequency range, and flexible division ratio make this device ideal for high performance and wideband communication systems.Applications Satellite communication systems Point to point and point to multipoint radios Military applications Test equipment

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

The HMC996LP4E is a GaAs PHEMT MMIC analog variable gain amplifier and / or driver amplifier which operates between 5 and 12 GHz. Ideal for microwave radio applications, the amplifier provides up to 18.5 dB of gain, output P1dB of up to +23 dBm, and up to +34 dBm of output IP3 at maximum gain, while requiring only 170 mA from a +5V supply. Gain control voltage pin (Vctrl) is provided to allow variable gain control up to 22 dB. Gain flatness is excellent making the HMC996LP4E ideal for EW, ECM and radar applications. The HMC996LP4E is housed in a RoHS compliant 4 x 4 mm QFN leadless package and is compatible with high volume surface mount manufacturing.Applications Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems? X-Band Radar Test Equipment & Sensors