The ADMV4530 is a highly integrated upconverter with an in-phase/quadrature (I/Q) mixer that is ideally suited for next generation Ka band satellite communications.An integrated low phase noise, fractional-N phase-locked loop (PLL) with a voltage controlled oscillator (VCO) and internal 2? multiplier generate the necessary on-chip local oscillator (LO) signal for the I/Q mixer, eliminating the need for external frequency synthesis. The VCO uses an internal autocalibration routine that allows the PLL to select the necessary settings and locks in approximately 100 ?s.The single-ended reference input to the PLL operates up to 500 MHz and features internal reference dividers and a multiplier for added flexibility. Additionally, the phase frequency detector (PFD) comparison frequency can be up to 250 MHz for integer mode and 160 MHz for fraction-N mode.The upconverter consists of an I/Q mixer that can operate in either I/Q mode with 500 MHz of bandwidth or in IF mode up to 3 GHz of bandwidth, which allows various radio architectures and backward compatibility with legacy systems.Immediately following the I/Q mixer are stages of gain and variable attenuation. The configuration can achieve a minimum 1 dB compression point (P1dB) compression point of 19 dBm, eliminating the need for external stages of gain.A programmable 4-wire serial port interface (SPI) allows adjustment of the quadrature phase for optimum sideband suppression. In addition, the SPI allows nulling of LO feedthrough in IF mode. In I/Q mode, the LO feedthrough can be nulled by applying external dc offset to the differential baseband I/Q inputs.An IF automatic gain control (AGC) adjusts the IF variable gain amplifier (VGA) to compensate for input power variations. During normal operation, this AGC feature can be enabled or disabled via the SPI. When disabled during normal operation, the AGC feature only works on a test tone during power-down mode to track temperature variations.The ADMV4530 upconverter comes in a RoHs compliant, 6 mm ? 6 mm, 40-terminal land grid array (LGA) package. The ADMV4530 operates over the ?40?C to +85?C case temperature range.Applications Satellite communication Point to point microwave communication

The ADMV7310 is a fully integrated system in package (SiP),in phase/quadrature (I/Q) upconverter that operates betweenan intermediate frequency (IF) input range of dc to 2 GHz anda radio frequency (RF) output range of 71 GHz to 76 GHz. Thedevice uses an image rejection mixer that is driven by a 6? localoscillator (LO) multiplier. The mixer RF output is followed by avariable gain amplifier (VGA) and a power amplifier (PA),providing a conversion gain of 35 dB typical. Differential I andQ mixer inputs are provided and can be driven with differentialI and Q baseband waveforms for direct conversion applications.Alternatively, the inputs can be driven using an external 90? hybridand two external 180? hybrids for single-ended applications.The ADMV7310 comes in a fully integrated, surface-mount,50-terminal, 16.00 mm ? 14.00 mm, chip array small outline nolead cavity (LGA_CAV) package. The ADMV7310 operatesover the ?40?C to +85?C temperature range.APPLICATIONS E-band communication systems High capacity wireless backhauls Test and measurement Aerospace and defense

The LT5579 mixer is a high performance upconverting mixer optimized for frequencies in the 1.5GHz to 3.8GHz range. The single-ended LO input and RF output ports simplify board layout and reduce system cost. The mixer needs only ?1dBm of LO power and the balanced design results in low LO signal leakage to the RF output. At 2.6GHz operation, the LT5579 provides high conversion gain of 1.3dB, high OIP3 of +26dBm and a low noise floor of ?157.5dBm/Hz at a ?5dBm RF output signal level. The LT5579 offers a high performance alternative to passive mixers. Unlike passive mixers, which have conversion loss and require high LO drive levels, the LT5579 delivers conversion gain at significantly lower LO input levels and is less sensitive to LO power level variations. The lower LO drive level requirements, combined with the excellent LO leakage performance, translate into lower LO signal contamination of the output signal.Applications GSM/EDGE, W-CDMA, UMTS, LTE and TD-SCDMA Basestations 2.6GHz and 3.5GHz WiMAX Basestations 2.4GHz ISM Band Transmitters High Performance Transmitters

DC1314A: Demo Board for LT5581 6GHz RMS Power Detector with 40dB Dynamic Range.

DC1528A: Demo Board for the LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range.

The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0 GHz. The ADPA1107 provides ?0.5 dB gain flatness from 5.4 GHz to 6.0 GHz.The ADPA1107 is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.The ADPA1107 is housed in a 40-lead, 6 mm ? 6 mm, lead frame chip scale package (LFCSP).APPLICATIONSWeather radarsMarine radarsMilitary radars

ADPA7005AEHZThe ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm ? 7 mm, 18?terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ADPA7005CHIPThe ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation Communications

The ADRF5045 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logiccompatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, and electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5047 is a reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.The ADRF5047 operates from 9 kHz to 44 GHz with an insertion loss of lower than 2.7 dB and an isolation of higher than 31 dB. The device has a radio frequency (RF) input power handling capability of 26.5 dBm for both through path and hot switching.The ADRF5047 draws a low current of 3 ?A on the positive supply of +3.3 V, and ?110 ?A on the negative supply of ?3.3 V. The device provides complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls.The ADRF5047 is pin-compatible with the ADRF5046 fast switching version, which operates from 100 MHz to 44 GHz.The ADRF5047 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanner Test instrumentation Cellular infrastructure?mmWave 5G Military radios, radars, and electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5141 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process. It is used in transmit-receive (T/R) applications with an integrated power limiter at the receive side. The ADRF5141 operates from 8 GHz to 12 GHz. The RX arm with the integrated power limiter has a limiting capability of 18 dBm output power (TBC) with a low insertion loss of 1.3 dB at 10 GHz while the TX arm has an insertion loss of 0.9 dB at 10 GHz. The ADRF5141 draws a low current of 13 ?A on the positive supply of +3.3 V and 360 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5141 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches. The ADRF5141 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?.APPLICATIONSElectronic warfareMilitary radios, radars, and electronic counter measuresGaN and PIN diode replacement