The AD8361 is a mean-responding power detector for use inhigh frequency receiver and transmitter signal chains, up to2.5 GHz. It is very easy to apply. It requires a single supply onlybetween 2.7 V and 5.5 V, a power supply decoupling capacitor,and an input coupling capacitor in most applications. Theoutput is a linear-responding dc voltage with a conversion gainof 7.5 V/V rms. An external filter capacitor can be added toincrease the averaging time constant.The AD8361 is intended for true power measurement of simpleand complex waveforms. The device is particularly useful formeasuring high crest-factor (high peak-to-rms ratio) signals,such as CDMA and W-CDMA.The AD8361 has three operating modes to accommodate avariety of analog-to-digital converter requirements: Ground reference mode, in which the origin is zero. Internal reference mode, which offsets the output 350 mV above ground. Supply reference mode, which offsets the output to VS/7.5.The AD8361 is specified for operation from ?40?C to +85?Cand is available in 8-lead MSOP and 6-lead SOT-23 packages. Itis fabricated on a proprietary high fT silicon bipolar process.

The LT5579 mixer is a high performance upconverting mixer optimized for frequencies in the 1.5GHz to 3.8GHz range. The single-ended LO input and RF output ports simplify board layout and reduce system cost. The mixer needs only ?1dBm of LO power and the balanced design results in low LO signal leakage to the RF output. At 2.6GHz operation, the LT5579 provides high conversion gain of 1.3dB, high OIP3 of +26dBm and a low noise floor of ?157.5dBm/Hz at a ?5dBm RF output signal level. The LT5579 offers a high performance alternative to passive mixers. Unlike passive mixers, which have conversion loss and require high LO drive levels, the LT5579 delivers conversion gain at significantly lower LO input levels and is less sensitive to LO power level variations. The lower LO drive level requirements, combined with the excellent LO leakage performance, translate into lower LO signal contamination of the output signal.Applications GSM/EDGE, W-CDMA, UMTS, LTE and TD-SCDMA Basestations 2.6GHz and 3.5GHz WiMAX Basestations 2.4GHz ISM Band Transmitters High Performance Transmitters

Phase Locked Loops - PLL WBand RF PLL VCO, 25-3000MHz

The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

The ADG918/ADG919 are wideband switches using a CMOSprocess to provide high isolation and low insertion loss to1 GHz. The ADG918 is an absorptive (matched) switch having50 ? terminated shunt legs, whereas the ADG919 is a reflectiveswitch. These devices are designed such that the isolation ishigh over the dc to 1 GHz frequency range. They have on-boardCMOS control logic, thus eliminating the need for externalcontrolling circuitry. The control inputs are both CMOS andLVTTL compatible. The low power consumption of theseCMOS devices makes them ideally suited to wireless andgeneral-purpose high frequency switching applications.Product Highlights ?43 dB off isolation at 1 GHz. 0.8 dB insertion loss at 1 GHz. Tiny 8-lead MSOP/LFCSP.Applications Wireless communications General-purpose RF switching Dual-band applications High speed filter selection Digital transceiver front end switch IF switching Tuner modules Antenna diversity switching

The ADGM1004 is a wideband, single-pole, four-throw (SP4T)?switch fabricated using Analog Devices, Inc., microelectro-mechanical system (MEMS) switch technology. This technology enables a small form factor, wide RF bandwidth, highly linear, low insertion loss switch that is operational from 0 Hz/dc to 13 GHz, making it an ideal solution for a wide range of RF and precision?equipment switching needs.An integrated driver chip generates a high voltage to electrostatically actuate switch that can be controlled by a parallel interface and a serial peripheral interface (SPI). All four switches are independently controllable.The device is packaged in a 24-lead, 5 mm ? 4 mm ? 1.45 mm, lead frame chip-scale package (LFCSP).To ensure optimum operation of the ADGM1004, follow the?Critical Operational Requirements section exactly. The on resistance (RON) performance of the ADGM1004 is?affected by part to part variation, channel to channel variation,?cycle actuations, settling time post turn on, bias voltage, and?temperature changes. Note that throughout this data sheet, multifunction pins, such?as IN1/SDI, are referred to either by the entire pin name or by a?single function of the pin, for example, SDI, when only that function is relevant.Applications Relay replacements Automatic test equipment (ATE): RF, digital, and mixed signals Load and probe boards: RF, digital, and mixed signals RF test instrumentation Reconfigurable filters and attenuators High performance RF switching

DC844D: Demo Board for the LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator.

The HMC1114LP5DE is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114LP5DE provides ?0.5 dB gain flatness.The HMC1114LP5DE is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.The HMC1114LP5DE is housed in a compact LFCSP_CAV package.Applications Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructure Test and measurement equipment Commercial and military radars General-purpose transmitter amplification

The HMC1120 is an RMS power detector with an integrated high bandwidth envelope detector. The RMS output is a temperature compensated, monotonic, linear-in-dB representation of real RF signal power, measured over an input sensing range of 70 dB. The envelope detector provides an accurate voltage output which is linearly proportional to the amplitude envelope of the RF input signal for modulation bandwidths up to 150 MHz. The high bandwidth envelope detection of the HMC1120 makes it ideal for detecting broadband and high crest factor RF signals commonly used in GSM, WCDMA, and LTE systems. Additionally, the instantaneous envelope output can be used to create fast, excessive RF power protection, PA linearization, and efficiency enhancing envelope-tracking PA implementations.The HMC1120?s RMS detector integration bandwidth is digitally programmable via input pins SCI1-4 over a range of more than 4 decades. This allows the user to dynamically set the operation bandwidth and also permits the detection of different types of modulations on the same platform.The HMC1120 features an internal op-amp at the RMS output stage, which accommodates slope and intercept adjustments and supports a wide range of applications.Applications Log ?> Root-Mean-Square (RMS) Conversion Tx/Rx Signal Strength Indication (TSSI / RSSI) RF Power Amplifier Efficiency Control Receiver Automatic Gain Control Transmitter Power Control Envelope Tracking PA Linearization

The HMC219B is an ultraminiature, general-purpose, double balanced mixer in an 8-lead plastic surface mini small outline package with exposed pad (MINI_SO_EP). This passive monolithic microwave integrated circuit (MMIC) mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry. The device can be used as an upconverter, downconverter, biphase demodulator, or phase comparator from 2.5 GHz to 7.0 GHz.The HMC219B provides excellent local oscillator (LO) to radio frequency (RF) isolation and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC219B eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques. The consistent MMIC performance improves system operation and assures regulatory compliance with HiperLAN, U-NII, and ISM.Applications Microwave radios High performance radio local area network (HiperLAN) and unlicensed national information infrastructure (U-NII) Industrial, scientific, and medical (ISM)