The ADL5606 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 1800 MHz to 2700 MHz. The device can be used in a wide variety of wired and wireless applications, including ISM, MC-GSM, W-CDMA, TD-SCDMA, and LTE.The ADL5606 operates on a 5 V supply voltage and a supply current of 362 mA. The driver also incorporates a fast power-up/power-down function for TDD applications, applications that require a power saving mode, and applications that intermittently transmit data.The ADL5606 is fabricated on a GaAs HBT process and is packaged in a compact 4 mm ? 4 mm, 16-lead LFCSP that uses an exposed paddle for excellent thermal impedance. The ADL5606 operates from ?40?C to +85?C. A fully populated evaluation board tuned to 2140 MHz is also available.Applications Wireless infrastructure Automated test equipment ISM/AMR applications

The ADL5721 is a narrow-band, high performance, low noise amplifier targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 5.9 GHz to 8.5 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This low noise amplifier (LNA) provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve. This LNA uses a band switch feature to allow the input P1dB and noise figure to trade off for optimum system performance.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL8111 is a low noise amplifier (LNA) with a nonreflective bypass switch that provides broadband operation from 10 MHz to 8000 MHz. The ADL8111 provides a low noise figure of 2.8 dB with a high output third-order intercept (OIP3) of 34 dBm simultaneously, which delivers a high dynamic range. The ADL8111 provides a gain of 12.5 dB that is stable over frequency, temperature, power supply, and from device to device.The integration of an amplifier and two single-pole, quad-throw (SP4T) nonreflective switches allows multiple gain andlinearity values. The addition of switches also offers high input intercept performance and prevents distortion on the high signal level applications.The ADL8111 has a high electrostatic discharge (ESD) rating of ?750 V (Class 1B) and is fully specified for operation across a wide temperature range of ?40?C to +85?C. The ADL8111 is offered in a 6 mm ? 6 mm, 28-terminal land grid array (LGA) package.Applications Military Test instrumentation Communications

The ADL8121 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.025 GHz to 12 GHz.The ADL8121 provides a typical gain of 16.5 dB, a 2.5 dB typical noise figure, and a typical output third-order intercept (OIP3) of 36 dBm across the 0.025 GHz to 10 GHz frequency range, requiring only 95 mA from a 5 V supply voltage. The saturated output power (PSAT) of 21.5 dBm typical across the 0.025 GHz to 10 GHz frequency range enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase and quadrature (I/Q) or image rejection mixers.The ADL8121 also features inputs and outputs that are internally matched to 50 ?, making the device ideal for surface-mounted technology (SMT)-based and is housed in a RoHS-compliant, 2 mm ? 2 mm, 6-lead LFCSP.APPLICATIONSTest instrumentationMilitary communicationsMilitary radarTelecommunications

The ADMV1012 is a compact, gallium arsenide (GaAs) design, monolithic microwave integrated circuit (MMIC) double sideband (DSB) downconverter in a RoHS compliant package optimized for point to point microwave radio designs that operate in the 17.5 GHz to 24 GHz input frequency range. The ADMV1012 provides 15 dB of conversion gain with 25 dB of image rejection, and 2.5 dB noise figure. The ADMV1012 uses a radio frequency (RF) low noise amplifier (LNA) followed by an in phase/quadrature (I/Q), double balanced mixer, where a driver amplifier drives the local oscillator (LO) with a ?2 multiplier. IF1 and IF2 mixer quadrature outputs are provided, and an external 90? hybrid is required to select the required sideband.The I/Q mixer topology reduces the need for filtering of unwanted sideband. The ADMV1012 is a much smaller alternative to hybrid style DSB downconverter assemblies and eliminates the need for wire bonding by allowing the use of surface-mount manufacturing assemblies.The ADMV1012 downconverter comes in a compact, thermally enhanced, 4.9 mm ? 4.9 mm, 32-terminal LCC. The ADMV1012 operates over the ?40?C to +85?C temperature range.Applications Point to point microwave radios Radars and electronic warfare systems Instrumentation, automatic test equipment (ATE)Satellite communications

The ADMV4530 is a highly integrated upconverter with an in-phase/quadrature (I/Q) mixer that is ideally suited for next generation Ka band satellite communications.An integrated low phase noise, fractional-N phase-locked loop (PLL) with a voltage controlled oscillator (VCO) and internal 2? multiplier generate the necessary on-chip local oscillator (LO) signal for the I/Q mixer, eliminating the need for external frequency synthesis. The VCO uses an internal autocalibration routine that allows the PLL to select the necessary settings and locks in approximately 100 ?s.The single-ended reference input to the PLL operates up to 500 MHz and features internal reference dividers and a multiplier for added flexibility. Additionally, the phase frequency detector (PFD) comparison frequency can be up to 250 MHz for integer mode and 160 MHz for fraction-N mode.The upconverter consists of an I/Q mixer that can operate in either I/Q mode with 500 MHz of bandwidth or in IF mode up to 3 GHz of bandwidth, which allows various radio architectures and backward compatibility with legacy systems.Immediately following the I/Q mixer are stages of gain and variable attenuation. The configuration can achieve a minimum 1 dB compression point (P1dB) compression point of 19 dBm, eliminating the need for external stages of gain.A programmable 4-wire serial port interface (SPI) allows adjustment of the quadrature phase for optimum sideband suppression. In addition, the SPI allows nulling of LO feedthrough in IF mode. In I/Q mode, the LO feedthrough can be nulled by applying external dc offset to the differential baseband I/Q inputs.An IF automatic gain control (AGC) adjusts the IF variable gain amplifier (VGA) to compensate for input power variations. During normal operation, this AGC feature can be enabled or disabled via the SPI. When disabled during normal operation, the AGC feature only works on a test tone during power-down mode to track temperature variations.The ADMV4530 upconverter comes in a RoHs compliant, 6 mm ? 6 mm, 40-terminal land grid array (LGA) package. The ADMV4530 operates over the ?40?C to +85?C case temperature range.Applications Satellite communication Point to point microwave communication

The ADMV7310 is a fully integrated system in package (SiP),in phase/quadrature (I/Q) upconverter that operates betweenan intermediate frequency (IF) input range of dc to 2 GHz anda radio frequency (RF) output range of 71 GHz to 76 GHz. Thedevice uses an image rejection mixer that is driven by a 6? localoscillator (LO) multiplier. The mixer RF output is followed by avariable gain amplifier (VGA) and a power amplifier (PA),providing a conversion gain of 35 dB typical. Differential I andQ mixer inputs are provided and can be driven with differentialI and Q baseband waveforms for direct conversion applications.Alternatively, the inputs can be driven using an external 90? hybridand two external 180? hybrids for single-ended applications.The ADMV7310 comes in a fully integrated, surface-mount,50-terminal, 16.00 mm ? 14.00 mm, chip array small outline nolead cavity (LGA_CAV) package. The ADMV7310 operatesover the ?40?C to +85?C temperature range.APPLICATIONS E-band communication systems High capacity wireless backhauls Test and measurement Aerospace and defense

The ADPA1107 is a gallium nitride (GaN), broadband power amplifier, delivering 45.0 dBm (35 W) with 56.5% typical power added efficiency (PAE) across a bandwidth of 4.8 GHz to 6.0 GHz. The ADPA1107 provides ?0.5 dB gain flatness from 5.4 GHz to 6.0 GHz.The ADPA1107 is ideal for pulsed applications such as radar, public mobile radio, and general-purpose amplification.The ADPA1107 is housed in a 40-lead, 6 mm ? 6 mm, lead frame chip scale package (LFCSP).APPLICATIONSWeather radarsMarine radarsMilitary radars

ADPA7005AEHZThe ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm ? 7 mm, 18?terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ADPA7005CHIPThe ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 31 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation Communications

The ADRF5045 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logiccompatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, and electronic counter measures (ECMs) Broadband telecommunications systems