The LTM9013 is a 300MHz wideband, low IF receiver. Utilizing an integrated system in a package (SiP) technology, it is a ?Module? (micromodule) receiver that includes a dual high speed 14-bit A/D converter, lowpass filter, differential gain stages and a quadrature demodulator.The LTM9013 is perfect for wideband I/Q receiver applications, with AC performance that includes 59dB SNR and 1.3dB frequency flatness from DC to 300MHz. A highpass filter or simple AC coupling are used external to the device for design flexiblity. The integrated on-chip broadband transformers provide a 50? single-ended interface at the RF input.A 5V supply powers the demodulator and a 3.3V supply powers the IF amplifiers for minimal distortion. A 1.8V supply allows low power ADC operation. A separate output supply allows the DDR LVDS outputs to drive 1.8V logic. An optional multiplexer allows both channels to share a digital output bus. An optional clock duty cycle stabilizer allows high performance at full speed for a wide range of clock duty cycles.Applications Telecommunications Wideband, Low IF Receivers Digital Predistortion Receivers Cellular Base Stations

DC2032A: Demo Board for the LTC6430-15 High Linearity Differential RF/IF Amplifier/ADC Driver.

Demonstration circuit DC2070A is optimized for evaluation of the LTC5577 high signal level active downconverting mixer. Its RF input port is matched to 50Ω from 1.3GHz to 4.3GHz with 12dB return loss, and the LO port is matched to 50Ω from 950MHz to 4.1GHz with 10dB return loss. The RF and LO inputs are easily matched for higher or lower frequencies with simple external matching, as low as 350MHz and 300MHz, respectively. The low capacitance differential IF output is usable up to 1.5GHz. The LTC5577 active mixer is optimized for RF downconverting applications that require high input signal handling capability and wide bandwidth.

Demonstration circuit 2091A is optimized for evaluation of the LTC5599 low power direct quadrature modulator. The balanced I and Q baseband input ports can be either AC- or DC-coupled to a source with a common mode voltage level of about 1.4V. Fixed LC networks on the LO and RF ports cover a continuous 90MHz to 1300MHz range. The SPI interface controls the supply current, modulator gain, and allows optimization of the LO carrier feedthrough and side-band suppression.

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ?0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from ?40?C to +85?C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation

The ADRF5020 is a general-purpose, single-pole, double-throw(SPDT) switch manufactured using a silicon process. It comesin a 3 mm ? 3 mm, 20-lead land grid array (LGA) package andprovides high isolation and low insertion loss from 100 MHz to30 GHz.This broadband switch requires dual supply voltages, +3.3 Vand ?2.5 V, and provides CMOS/LVTTL logic-compatiblecontrol.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 ?. The ADRF5026 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.The ADRF5026 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.The ADRF5026 supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.The device comes in a RoHS compliant, compact, 24-lead, 4 mm ? 4 mm LFCSP package.Applications Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement

The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5144 operates from 1 GHz to 20 GHz with typical insertion loss of 0.85 dB and typical isolation of 48 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and TBD dBm peak power for the insertion loss path. The ADRF5144 also supports extended frequency range of 9 kHz to 26.5 GHz with derated power handling capability below 1 GHz and above 20 GHz.The ADRF5144 draws a low current of 130 ?A on the positive supply of +3.3 V and 510 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.The ADRF5144 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance will be maintained while the switching characteristics, linearity and power handling performance will be derated, see Table 2 in the data sheet.The ADRF5144 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?C.APPLICATIONSTest instrumentationMilitary radios, radars, and electronic counter measuresSATCOMGaN and PIN diode replacement