LC2MOS 5 RON SPST Switches Features: Low On-Resistance (4 Ω) On-Resistance Flatness 0.2 Ω 44 V Supply Maximum Ratings ± 15 V Analog Signal Range Fully Specified @ ±5V, +12V, ±15V Ultralow Power Dissipation (18 µW) ESD 2 kV Continuous Current 100mA Fast Switching Times ton < 70 ns toff < 60 ns TTL/CMOS-Compatible Inputs Pin Compatible Upgrade for ADG412 and ADG432 16-Lead DIP, SOIC and Cerdip Packages

LC2MOS Precision 5V/3V Quad SPST Switches Features: +3V, +5V and ± 5 V Power Supplies Ultralow Power Dissipation (<0.5 µW ) Low Leakage (< 100 pA) Low On-Resistance (<50 Ω) Fast Switching Times Low Charge Injection TTL/CMOS-Compatible Inputs 16-Lead DIP and SOIC Packages

High Voltage, Latch-Up Proof, 16-Channel Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 64 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV all other pins

User Defined Fault Protection and Detection, 0.8 pC QINJ, Dual 4:1 Multiplexers Features: User defined secondary supplies set overvoltage level Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Minimum secondary supply level: 4.5 V single-supply Interrupt flags indicate fault status Low charge injection (QINJ): 0.8 pC Low drain/source on capacitance: 14 pF Latch-up immune under any circumstance Known state without digital inputs present VSS to VDD analog signal range ±5 V to ±22 V dual-supply operation 8V to 44 V single-supply operation Fully specified at ±15 V, ±20 V, +12 V, and +36 V 

0 Hz/DC to 20 GHz, SPDT MEMS Switches Features: ADGM1002: DC to 20 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.9 dB (typical) at 20 GHz IIP3: 76 dBm (typical) Maximum RF power: 30 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 150 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 13 GHz, 2.5 kV HBM ESD, SP4T, MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 10.8 GHz (typical) for RF1, RF4 13 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.45 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IP3: 67 dBm (typical) RF input power: 32 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 µs (maximum) ESD HBM rating 5 kV for RF1 to RF4 and RFC pins 2.5 kV for all other pins Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS/LVTTL compatible Parallel and SPI Interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins 5 mm × 4 mm × 1.45 mm, 24-lead LFCSP Operating temperature range: 0°C to 85°C

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

Analogue Switch ICs DUAL 2:1 MUX. IC.

RF Switch ICs SPDT, Hi Isolation Switch , DC - 3.5 GHz