High Voltage, Latch-Up Proof, 16-Channel Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 64 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV all other pins

User Defined Fault Protection and Detection, 0.8 pC QINJ, Dual 4:1 Multiplexers Features: User defined secondary supplies set overvoltage level Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source pins Minimum secondary supply level: 4.5 V single-supply Interrupt flags indicate fault status Low charge injection (QINJ): 0.8 pC Low drain/source on capacitance: 14 pF Latch-up immune under any circumstance Known state without digital inputs present VSS to VDD analog signal range ±5 V to ±22 V dual-supply operation 8V to 44 V single-supply operation Fully specified at ±15 V, ±20 V, +12 V, and +36 V 

0 Hz/DC to 20 GHz, SPDT MEMS Switches Features: ADGM1002: DC to 20 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.9 dB (typical) at 20 GHz IIP3: 76 dBm (typical) Maximum RF power: 30 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 150 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 13 GHz, 2.5 kV HBM ESD, SP4T, MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 10.8 GHz (typical) for RF1, RF4 13 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.45 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IP3: 67 dBm (typical) RF input power: 32 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 µs (maximum) ESD HBM rating 5 kV for RF1 to RF4 and RFC pins 2.5 kV for all other pins Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS/LVTTL compatible Parallel and SPI Interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins 5 mm × 4 mm × 1.45 mm, 24-lead LFCSP Operating temperature range: 0°C to 85°C

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

The ADG1401 / ADG1402 contain a single-pole/single-throw (SPST) switch. Figure 1 shows that with a logic input of 1, the switch of the ADG1401 is closed and that of the ADG1402 is open. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked.The iCMOS® (industrial CMOS) modular manufacturing process combines high voltage, complementary metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has achieved. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and a reduced package size.The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. The iCMOS construction ensures ultralow power dissipation, making the part ideally suited for portable and battery-powered instruments.PRODUCT HIGHLIGHTS 1.3 Ω maximum on resistance at 25°C. Minimum distortion. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V. No VL logic power supply required. 8-lead MSOP and 8-lead, 3 mm × 2 mm LFCSP packages.APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems Relay replacements

The ADG1414 is a monolithic complementary metal oxide semiconductor (CMOS) device containing eight independently selectable switches designed on an industrial CMOS (iCMOS®) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduce the package size.The ADG1414 is a set of octal SPST (single-pole, single-throw) switches controlled via a 3-wire serial interface. On resistance is closely matched between switches and is very flat over the full signal range. Each switch conducts equally well in both directions and the input signal range extends to the supplies.Data is written to these devices in the form of eight bits; each bit corresponds to one channel.The ADG1414 utilizes a versatile 3-wire serial interface that operates at clock rates of up to 50 MHz and is compatible with standard SPI®, QSPI™, MICROWIRE™, and DSP interface standards. The output of the shift register, SDO, enables a number of these parts to be daisy chained.On power-up, all switches are in the off condition, and the internal registers contain all zeros.PRODUCT HIGHLIGHTS 50 MHz serial interface. 9.5 Ω on resistance. 1.6 Ω on-resistance flatness. 24-lead TSSOP and 4 mm × 4 mm LFCSP packages.APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems

The ADG1606 and ADG1607 are monolithic iCMOS® analogmultiplexers comprising of 16 single channels and eightdifferential channels, respectively. The ADG1606 switches one of16 inputs to a common output, as determined by the 4-bitbinary address lines (A0, A1, A2, and A3). The ADG1607switches one of eight differential inputs to a common differentialoutput, as determined by the 3-bit binary address lines (A0, A1,and A2). An EN input on both devices enables or disables thedevice. When disabled, all channels switch off. When enabled,each channel conducts equally well in both directions and has aninput signal range that extends to the supplies.The ultralow on resistance and on-resistance flatness of theseswitches make them ideal solutions for data acquisition andgain switching applications where low distortion is critical.iCMOS® construction ensures ultralow power dissipation,making the parts ideally suited for portable and battery-poweredinstruments.Product Highlights 7.5 Ω maximum on resistance over temperature. Minimum distortion: THD + N = 0.04% 3 V logic-compatible digital inputs: VINH = 2.0 V, VINL = 0.8 V. No VL logic power supply required.Applications Communication systems Medical systems Audio signal routing Video signal routing Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Relay replacements

The ADG1208 and ADG1209 are monolithic, iCMOS® analogmultiplexers comprising eight single channels and four differentialchannels, respectively. The ADG1208 switches one of eight inputsto a common output as determined by the 3-bit binary addresslines A0, A1, and A2. The ADG1209 switches one of fourdifferential inputs to a common differential output as determinedby the 2-bit binary address lines A0 and A1. An EN input onboth devices enable or disable the device. When disabled, allchannels are switched off. When on, each channel conductsequally well in both directions and has an input signal rangethat extends to the supplies.The iCMOS (industrial CMOS) modular manufacturingprocess combines high voltage CMOS (complementary metal-oxidesemiconductor) and bipolar technologies. It enables thedevelopment of a wide range of high performance analog ICscapable of 33 V operation in a footprint that no other generationof high voltage devices has been able to achieve. Unlike analogICs using conventional CMOS processes, iCMOS componentscan tolerate high supply voltages while providing increasedperformance, dramatically lower power consumption, andreduced package size.The ultralow capacitance and exceptionally low charge injectionof these multiplexers make them ideal solutions for data acquisitionand sample-and-hold applications, where low glitch and fastsettling are required. There is minimum chargeinjection over the entire signal range of the device. iCMOSconstruction also ensures ultralow power dissipation, making theds ideally suited for portable and battery-powered instruments.Applications Audio and video routing Automatic test equipment Data-acquisition systems Battery-powered systems Sample-and-hold systems Communication systems