Low Power, 24-Bit, 31.25 kSPS, Sigma-Delta ADC with True Rail-to-Rail Buffers Features: Fast and flexible output rate: 1.25 SPS to 31.25 kSPS Channel scan data rate of 6.21 kSPS/channel (161 µs settling) Performance specifications 17.2 noise free bits at 31.25 kSPS 24 noise free bits at 5 SPS INL: ±2 ppm of FSR 85 dB rejection of 50 Hz and 60 Hz with 50 ms settling User configurable input channels 2 fully differential channels or 4 single-ended channels Crosspoint multiplexer On-chip 2.5 V reference (±2 ppm/°C drift) True rail-to-rail analog and reference input buffers Internal or external clock See data sheet for additional features

CMOS, 12-Bit Serial DACPORT Features: 12-Bit CMOS DAC with On-Chip Voltage Reference Output Amplifier Three Selectable Output Ranges -5 V to + 5 V, 0 V to +5 V, 0 V to +10 V Serial Interface 300 kHz DAC Update Rate Small Size: 16-Lead DIP or SOIC Nonlinearity: ±1/2 LSB Tmin to Tmax Low Power Dissipation: 100 mW Typical  

Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifiers Features: Wide input range beyond supplies Rugged input overvoltage protection Low supply current: 200 μA maximum per channel Low power dissipation: 0.54 mW at VS = 2.7 V Bandwidth: 550 kHz CMRR: 86 dB minimum, dc to 10 kHz System offset voltage: ±2 μV/°C maximum (B Grade) Low gain drift: 1 ppm/°C maximum (B Grade) Enhanced slew rate: 1.1 V/μs Wide power supply range Single supply: 2.0 V to 36 V Dual supplies: ±2 V to ±18 V

0.1 GHz TO 2.5 GHz, 70 dB Logarithmic Detector / Controller Features: Wide bandwidth: 0.1 GHz to 2.5 GHz min High dynamic range: 70 dB to ±3.0 dB High accuracy: ±1.0 dB over 65 dB range (@ 1.9 GHz) Fast response: 40 ns full-scale typical Controller mode with error output Scaling stable over supply and temperature Wide supply range: 2.7 V to 5.5 V Low power: 40 mW at 3 V Power-down feature: 60 mW at 3 V

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications