Demonstration circuit 2046A-C is a PoE powered device (PD) with an isolated power supply using synchronous flyback topology, featuring the LT4276 and ideal diode bridge controller (LT4321).

Demonstration circuit 2046A-E is a PoE powered device (PD) with an isolated power supply using synchronous flyback topology, featuring the LT4276 and ideal diode bridge controller (LT4321).

Demonstration Circuit 2048A is a nanopower buckboost DC/DC with energy harvesting battery life extender featuring the LTC3330. The LTC3330 integrates a high voltage energy harvesting power supply plus a DC/DC converter powered by a primary cell battery to create a single output supply for alternative energy applications. The energy harvesting power supply, consisting of an integrated low-loss full-wave bridge with a high voltage buck converter, harvests energy from piezoelectric, solar or magnetic sources. The primary cell input powers a buck-boost converter capable of operating down to 1.8V at its input. Either DC/DC converter can deliver energy to a single output.

The LTM4675 is a dual 9A or single 18A step-down ?Module? (micromodule) DC/DC regulator with 40ms turn-on time. It features remote configurability and telemetry-monitoring of power management parameters over PMBus?an open standard I2C-based digital interface protocol. The LTM4675 is comprised of fast analog control loops, precision mixed-signal circuitry, EEPROM, power MOSFETs, inductors and supporting components.The LTM4675?s 2-wire serial interface allows outputs to be margined, tuned and ramped up and down at programmable slew rates with sequencing delay times. Input and output currents and voltages, output power, temperatures, uptime and peak values are readable. Custom configuration of the EEPROM contents is not required. At start-up, output voltages, switching frequency, and channel phase angle assignments can be set by pin-strapping resistors. The LTpowerPlay? GUI and DC1613 USB-to-PMBus converter and demo kits are available.The LTM4675 is offered in a 16mm ? 11.9mm ? 3.51mm BGA package available with SnPb or RoHS compliant terminal finish.APPLICATIONS System Optimization in Prototype and Production

RF Amplifier Low Noise Amplifier, LNA

The HMC407MS8G & HMC407MS8GE are high?efficiency GaAs InGaP Heterojunction Bipolar?Transistor (HBT) MMIC Power amplifiers which?operate between 5 and 7 GHz. The amplifier requires?no external matching to achieve operation and is?thus truly 50 Ohm matched at input and output. The?amplifier is packaged in a low cost, surface mount?8 leaded package with an exposed base for improved?RF and thermal performance. The amplifier?provides 15 dB of gain, +29 dBm of saturated power?at 28% PAE from a +5V supply voltage. Power down?capability is available to conserve current consumption?when the amplifier is not in use.Applications UNII HiperLAN

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.Applications 802.11a WLAN HiperLAN WLAN Access Points UNII & ISM Radios

The HMC384LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 3.5 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC390LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.55 to 3.9 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 42 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4 dBm typical from a single supply of 3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a, HiperLAN WLAN VSAT, UNII & Microwave Radio Test Equipment & Industrial Controls Military