The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC230MS8(E) is a broadband 3-bit positive control GaAs IC digital attenuator in 8 lead MSOP surface mount plastic package. Covering 0.75 to 2 GHz, the insertion loss is typically less than 2 dB. The attenuator bit values are 4 (LSB), 8, and 16 dB for a total attenuation of 28 dB. Accuracy is excellent at ±0.5 dB typical with an IIP3 of up to +48 dBm. Three bit control voltage inputs, toggled between 0 and +3 to +5 volts, are used to select each attenuation state at less than 50 uA each. A single Vdd bias of +3 to +5 volts applied through an external 5K Ohm resistor is required.Applications Cellular  PCS, ISM, MMDS  WLL Handset  Base Station Infrastructure

The HMC264 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm². The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -4 dBm nominal drive requirement. All data is measured with the chip in a 50Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils).APPLICATIONS Microwave Point-to-Point Radios LMDS SATCOM

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment

Delay Lines/Timing Elements brdbnd Analog Time Delay SMT DC-24 GHz

Clock & Timer Development Tools LTC6995-2 Demo Board - 1sec Power-on Res

The HMC512LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC512LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage cont-rolled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point Radios  Point-to-Multi-Point Radios Test Equipment & Industrial Controls  SATCOM Military End-Use

The HMC513LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC513LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by- 4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio  Test Equipment & Industrial Controls  Military End-Use

The HMC515LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC515LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +10 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio  Point-to-Point/Multi-Point Radio  Test Equipment & Industrial Controls  Military End-Use