The ADM3061E/ADM3062E/ADM3063E/ADM3064E/ADM3065E/ADM3066E/ADM3067E/ADM3068E are 3.0 V to5.5 V, IEC electrostatic discharge (ESD) protected RS-485transceivers, allowing the devices to withstand ?12 kV contactdischarges on the transceiver bus pins without latch-up ordamage. The ADM3062E/ADM3064E/ADM3066E/ADM3068Efeature a VIO logic supply pin that allows a flexible digital interfacecapable of operating as low as 1.62 V. The ADM3065E/ADM3066E/ADM3067E/ADM3068E aresuitable for high speed, 50 Mbps, bidirectional data communication on multipoint bus transmission lines. The ADM3061E/ADM3062E/ADM3063E/ADM3064E/ADM3065E/ADM3066E/ADM3067E/ADM3068E feature a 1/4 unit load inputimpedance that allows up to 128 transceivers on a bus. TheADM3061E/ADM3062E/ADM3063E/ADM3064E models offerall of the same features as the ADM3065E/ADM3066E/ADM3067E/ADM3068E models at a low 500 kbps data rate thatis suitable for operation over long cable runs. The ADM3061E/ADM3062E/ADM3065E/ADM3066E are halfduplex RS-485 transceivers, fully compliant to the PROFIBUS?standard with increased 2.1 V bus differential voltage at VCC ?4.5 V. The ADM3063E/ADM3064E/ADM3067E/ADM3068Eare full duplex RS-485 transceiver options. The RS-485 transceivers are available in a number of spacesaving packages, including the 10-lead, 3 mm ? 3 mm lead framechip-scale package (LFCSP), the 8-lead or 10-lead, 3 mm ? 3 mmmini small outline package (MSOP), and the 8-lead or 14-lead,narrow body standard small outline packages (SOIC_N).Models with operating temperature ranges of ?40?C to +125?Cand ?40?C to +85?C are available. Excessive power dissipation caused by bus contention or byoutput shorting is prevented by a thermal shutdown circuit. If asignificant temperature increase is detected in the internal drivercircuitry during fault conditions, this feature forces the driveroutput into a high impedance state. The ADM3061E/ADM3062E/ADM3063E/ADM3064E/ADM3065E/ADM3066E/ADM3067E/ADM3068E guarantee alogic high receiver output when the receiver inputs are shorted,open, or connected to a terminated transmission line with alldrivers disabled. Table 2 in the data sheet presents an overview of the ADM3061E/ADM3062E/ADM3063E/ADM3064E/ADM3065E/ADM3066E/ADM3067E/ADM3068E data rate capability across temperature, power supply,and package options. Refer to the Ordering Guide section formodel numbering.APPLICATIONS Industrial fieldbuses Process control Building automation PROFIBUS networks Motor control servo drives and encoders?

16-Lead Plastic Dual In-Line Package [PDIP]

The ADG442 is an integrated CMOS component consisting of four individual switches that can be independently selected. It is crafted using an improved LC2MOS process, offering low power dissipation while maintaining high switching speed and low on-resistance.

To activate the ADG442 switches, a logic high signal on the corresponding control input is required. When in the ON state, each switch conducts equally well in both directions, and their input signal range extends to the power supplies. All switches feature break-before-make switching action, making them suitable for multiplexer applications. The design inherently incorporates low charge injection, minimizing transients when switching digital inputs.

Features and Benefits:

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

Compact, 600 mA, 3 MHz, Step-Down DC-to-DC Converter

Accelerometers High Perf 3-Axis Digit +/-2g/+/-4g/+/-8g Accel

Digital to Analog Converters - DAC CMOS CONVERTER IC

RF Amplifier Low Noise Amplifier, LNA

The HMC505LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 6.8 to 7.4 GHz, the VCO?s phase noise performance is excellent over temperature, shock and vibration due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a single supply of +3V @ 80 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC439QS16G(E) is a digital phase-frequency detector intended for use in low noise phase-locked loop applications for inputs from 10 to 1300 MHz. Its combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizers with wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunction with a differential loop amplifier, the HMC439QS16G(E) generate output voltages that can be used to phase lock a VCO to a reference oscillator. The device is packaged in a low cost, surface mount 16 lead QSOP package with an exposed base for improved RF and thermal performance.APPLICATIONS Point-to-Point Radios Satellite Communication Systems Military Applications Sonet Clock Generation

The HMC472ALP4E are broadband 6-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line per bit digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 3.8 GHz, the insertion loss is less than 2.0 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ? 0.25 dB typical step error with an IIP3 of +54 dBm. Six TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONSThe HMC472ALP4E is ideal for: 3G Infrastructure & access points? Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless? Test Equipment and Sensors GSM, WCDMA & TD-SCDMA