STEPPER MOTOR, 2-PH, 0.67A, 12N-CM; Coil Type:Bipolar; Torque Max:12N-cm; Current Rating:670mA; No. of Phases:Two Phase; Resistance:9.2ohm; Inductance:7.2mH; Inertia:18g-cm²; Product Range:PANdrive Series; SVHC:No SVHC (27-Jun-2018)

LDO Voltage Regulators 20V 200mA LDO 3.3Vo

2 A/1.2 A DC-to-DC Switching Regulator with Independent Positive and Negative Outputs Features: Wide input supply voltage range: 2.85 V to 15 V Generates well regulated, independently resistor programmable VPOS and VNEG outputs Boost regulator to generate VPOS output Adjustable positive output to 39 V Integrated 2.0 A main switch Optional single-ended primary-inductor converter (SEPIC) configuration for automatic step-up/step-down Inverting regulator to generate VNEG output Adjustable negative output to VIN − 39 V Integrated 1.2 A main switch True shutdown for both positive and negative outputs 1.2 MHz/2.4 MHz switching frequency with optional external frequency synchronization from 1.0 MHz to 2.6 MHz Resistor programmable soft start timer Slew rate control for lower system noise Individual precision enable and flexible start-up sequence control for symmetric start, VPOS first, or VNEG first Out-of-phase operation UVLO, OCP, OVP, and TSD protection 4 mm × 4 mm, 20-lead LFCSP and 20-lead TSSOP −40°C to +125°C junction temperature range Supported by the ADIsimPower tool set

Ultralow Power Boost Regulator with MPPT and Charge Management Features:Boost regulator with maximum power point tracking (MPPT) Hysteretic controller for best ultralight load efficiency 320 nA ultralow quiescent current (CBP ≥ MINOP) 260 nA ultralow quiescent current (CBP < MINOP) Input voltage operation range from 80 mV to 3.3 V Cold start from 380 mV (typical) with charge pump Open circuit voltage (OCV) sensing for MPPT Programmable MPPT ratio for photovoltaic (PV) or thermoelectric generator (TEG) energy sources Programmable shutdown point on MINOP pinEnergy storage management Programmable voltage monitor (2.2 V to 5.2 V) to support charging and prevent overcharging or overdischarging Power path management for an optional backup primary cell battery connected to the BACK_UP pinRF transmission friendly Temporary shutdown boost regulator via microcontroller (MCU) communication

20 V, 200 mA, Low Noise, CMOS LDO Linear Regulator Features: Low noise: 11 μV rms independent of fixed output voltage PSRR of 88 dB at 10 kHz, 68 dB at 100 kHz, 50 dB at 1 MHz, VOUT ≤ 5 V, VIN = 7 V Input voltage range: 2.7 V to 20 V Maximum output current: 200 mA Initial accuracy: ±0.8% Accuracy over line, load, and temperature −1.2% to +1.5%, TJ = −40°C to +85°C ±1.8%, TJ = −40°C to +125°C Low dropout voltage: 200 mV (typical) at a 200 mA load,  VOUT = 5 V User programmable soft start (LFCSP and SOIC only) Low quiescent current, IGND = 50 μA (typical) with no load Low shutdown current: 1.8 μA at VIN = 5 V, 3.0 μA at VIN = 20 V Stable with a small 2.2 μF ceramic output capacitor Fixed output voltage options: 1.8 V, 2.5 V, 3.3 V, 4.5 V, and 5.0 V 16 standard voltages between 1.2 V and 5.0 V are available Adjustable output from 1.2 V to VIN – VDO, output can be adjusted above initial set point Precision enable 2 mm × 2 mm, 6-lead LFCSP, 8-Lead SOIC, 5-Lead TSOT AEC-Q100 qualified for automotive applications

Silicon SPDT SwitchReflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Reflective design Low insertion loss with impedance match 1.0 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.7 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.1 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5025 low frequency cutoff version ADRF5024-EP Supports defense and aerospace applications (AQEC standard) Download ADRF5024-EP data sheet (pdf) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request

0.5 dB LSB, 6-Bit, Silicon Digital Attenuator, 100 MHz to 40 GHz Features:Ultrawideband frequency range: 100 MHz to 40 GHz Attenuation range: 0.5 dB steps to 31.5 dB Low insertion loss with impedance match 2.1 dB up to 18 GHz 2.9 dB up to 26 GHz 4.8 dB up to 40 GHz Attenuation accuracy with impedance match ±(0.10 + 1.0% of attenuation state) up to 18 GHz ±(0.15 + 0.8% of attenuation state) up to 26 GHz ±(0.35 + 2.5% of attenuation state) up to 40 GHz Typical step error with impedance match ±0.18 dB up to 18 GHz ±0.23 dB up to 26 GHz ±0.51 dB up to 40 GHz High input linearity P0.1dB insertion loss state: 30 dBm P0.1dB other attenuation states: 27 dBm IP3: 50 dBm typical High RF input power handling: 27 dBm average, 30 dBm peak Tight distribution in relative phase No low frequency spurious signals SPI and parallel mode control, CMOS/LVTTL compatible RF settling time (0.1 dB of final RF output): 250 ns 24-terminal, 4 mm × 4 mm LGA package Pin compatible with ADRF5720, low frequency cutoff version

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter Features: Wideband RF output frequency range: 5.9 GHz to 23.6 GHz Two upconversion modes Direct conversion from baseband I/Q to RF Single sideband upconversion from real IF LO input frequency range: 5.4 GHz to 14 GHz LO doubler for up to 28 GHz Matched 100 Ω balanced RF output, LO input, and IF input High impedance baseband inputs Sideband suppression and carrier feedthrough optimization Variable attenuator and power detector for Tx power control Programmable via 4-wire SPI interface 32-lead, 5 mm × 5 mm LFCSP microwave packaging

Dual Narrow/Wideband RF Transceiver Features: 2 2 highly integrated transceiver Frequency range of 30 MHz to 6000 MHz Transmitter and receiver bandwidth from 12 kHz to 40 MHz Two fully integrated, fractional-N, RF synthesizers LVDS and CMOS synchronous serial data interface options Low power monitor and sleep modes Multichip synchronization capabilities Fast frequency hopping Dynamic profile switching for dynamic data rates and sample rates Fully programmable via a 4-wire SPI 12 mm 12 mm, 196-ball CSP_BGA

Micropower, 3-Axis, 400 g, Digital Output, MEMS Accelerometer Features: ±400 g measurement range 160 Hz to 2560 Hz user selectable bandwidth with 4-pole antialiasing filter Selectable oversampling ratio Adjustable high-pass filter Ultra Low power Power can be derived from a coin cell battery 19 μA at 2560 Hz ODR, 2.5 V supply Low power wake-up mode for low g activity detection 1.4 μA instant on mode with adjustable threshold 0.1 μA standby mode Built-in features for system level power savings Autonomous interrupt processing without processor intervention Ultra low power event monitoring: detects impacts and wakes up fast enough to capture the transient events Adjustable low g threshold activity and inactivity detection Wide operating voltage range: 1.6 V to 3.5 V Acceleration sample synchronization via external trigger SPI digital interface and I2C interface format support 12-bit output at 200 mg/LSB scale factor Wide temperature range: −40°C to +105°C Small, thin 3.00 mm × 3.25 mm × 1.06 mm package