6.5 V, 1 A, Ultralow Noise, High PSRR, Fast Transient Response CMOS LDO Features: Input voltage range: 2.3 V to 6.5 V Maximum load current: 1 A Low noise: 5 μV rms independent of output voltage at 100 Hz to 100 kHz Fast transient response: 1.5 μs for 1 mA to 500 mA load step 60 dB PSRR at 100 kHz Low dropout voltage: 42 mV at 500 mA load, VOUT = 3 V Initial accuracy: −0.5% (minimum), +1% (maximum) Accuracy over line, load, and temperature: ±1.5% Quiescent current, IGND = 0.7 mA with no load Low shutdown current: 0.25 μA at VIN = 5 V Stable with small 4.7 μF ceramic output capacitor Adjustable and fixed output voltage options: 1.2 V to 5.0 V Adjustable output from 1.2 V to VIN − VDO Precision enable Adjustable soft start 8-lead, 3 mm × 3 mm LFCSP package Supported by ADIsimPower tool

Ultralow Power Voltage Detector with Disable Input and Low Threshold Voltages Features: Ultralow power consumption with ICC = 92 nA (typical) Precision, low voltage monitoring Pretrimmed voltage monitoring threshold options 20 options from 0.5 V to 1.9 V ±1.3% threshold accuracy over full temperature range Output disable input 23 µs to 26 µs typical propagation delay Open-drain type output Power supply glitch immunity Available in a 1.46 mm × 0.96 mm WLCSP Operational temperature range: −40°C to +85°C

2 GHz to 18 GHz, Digitally Tunable, High-Pass and Low-Pass Filter Features: Digitally tunable, multioctave, high-pass and low-pass tuning Independent 3 dB frequency control for up to 4 GHz of bandwidth Optimal wideband rejection: 35 dB Single chip replacement for discrete filter banks Compact 9 mm × 9 mm, 56-terminal LGA packageENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard Military temperature range of −55°C to +105°C Controlled manufacturing baseline One assembly and test site One fabrication site Production change notification Qualification data available on request V62/21604

5.7 kV RMS/1.5 kV RMS, Quad-Channel LVDS 2.5 Gigabit Isolator (0 Reverse Channels) Features: 5.7 kV rms and 1.5 kV rms LVDS isolators Complies with TIA/EIA-644-A LVDS signal levels Quad-channel configuration Any data rate up to 2.5 Gbps switching with low jitter 10 Gbps total bandwidth across four channels 2.15 ns typical propagation delay Typical jitter: 0.82 ps rms random, 40 ps total peak Lower power 1.8 V supplies ±8 kV IEC 61000-4-2 ESD protection across isolation barrier High common-mode transient immunity: 100 kV/μs typical Safety and regulatory approvals (28-lead SOIC_W_FP package) UL (pending): 5700 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A (pending) VDE certificate of conformity (pending) DIN V VDE V 0884-11 (VDE V 0884-11):2017-01 VIORM = 849 VPEAK (working voltage) Enable or disable refresh (low speed output correctness check) Operating temperature range: −40°C to +125°C 28-lead, wide-body, finer pitch SOIC_W_FP package with 8.3 mm creepage and clearance or 6 mm × 6 mm LFCSP package with 1.27 mm creepage and clearance

50 V, 130 kHz, 32.5 A, Robust, Over-The-Top Precision Op Amp Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 32.5 μA (typical) Low input offset voltage: ±60 μV maximum Low input offset voltage drift: ±1 μV/°C maximum (B grade) Low input voltage noise 6 Hz typical 1/f noise corner 1000 nV p-p typical at 0.1 Hz to 10 Hz GBP: 130 kHz typical for fTEST = 250 Hz Slew rate: 0.1 V/μs typical at ΔVOUT = 4 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±300 pA maximum Large signal voltage gain: 120 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade) Shutdown feature available for single 6-lead TSOT and dual 10-lead LFCSP packages

50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: (VSY): +3.15 V to +50 V (±25 V for PSRR) Low supply current: 1.5 mA per channel (typical) Low input offset voltage: ±40 μV maximum Low input offset voltage drift: ±0.4 μV/°C maximum Low voltage noise: 1/f noise corner: 6 Hz typical 150 nV p-p typical at 0.1 Hz to 10 Hz 7 nV/√Hz typical at 100 Hz (en) High speed GBP: 8 MHz typical Slew rate: 5.5 V/μs typical at ΔVOUT = 25 V Low power shutdown: 20 μA maximum Low input bias current: ±10 nA maximum Large signal voltage gain: 120 dB minimum CMRR: 118 dB, minimum PSRR: 123 dB, minimum Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

10 GHz to 40 GHz, 1:4 Channel, 4 Frequency Multiplier/Filter Features: 4 input frequency multiplier with programmable harmonic filter Quad Differential Output PAs with independent Enable Control Input Frequency Range: 2.5 GHz to 10 GHz Output Frequency Range: 10 GHz to 40 GHz Input power: 20 dBm (50 ) Output power: 5 dBm differential (100 ) Harmonic rejection: 20 dBc to 40 dBc at all frequencies 3-Wire or 4-Wire SPI Control of all functions On-Chip Programmable State Machines for fast multiplier/filter and transmitter switching and control On-chip temperature sensor, output power detectors, and ADC DC power: 450 mW (2.5 V supply) 6 mm 6 mm, 40-terminal LGA package

Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator Features: Fully specified rail-to-rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch TTL-/CMOS-compatible output stage 40 ns propagation delay Low power 1 mW at 2.5 V Shutdown pin Programmable hysteresis Power supply rejection > 60 dB −40°C to +125°C operation

Microwave Wideband Synthesizer with Integrated VCO Features: Output frequency range: 800 MHz to 12.8 GHz Jitter = 18 fsRMS (Integration BW: 100 Hz to 100 MHz) Jitter = 27 fsRMS (ADC SNR Method) Wideband Noise Floor: -160 dBc/Hz @12 GHz PLL Specifications: -239 dBc/Hz: Normalized In-Band Phase Noise Floor -147 dBc/Hz: Normalized In-Band 1/f Noise Phase Detector Frequency up to 500 MHzReference Input Frequency up to 1 GHz Typical -100 dBc PFD spursReference to Output Delay Specifications: Part-to-Part Standard Deviation: 3 ps Temperature Drift: 0.03 ps/ Adjustment Step Size: <+/-0.1 ps Multi-chip Output Phase Alignment 3.3 V and 5 V Power supplies 7 mm x 7 mm 48 Lead LGA