Integrated, Precision Battery Sensor for Automotive Features: High precision ADC Dual channel, simultaneous sampling, 16-bit Σ-Δ ADCs Programmable ADC throughput from 10 Hz to 1 kHz On-chip 5 ppm/ºC voltage reference Current channel Fully differential, buffered input Programmable gain ADC input range: −200 mV to +300 mV Digital comparator with current accumulator feature Voltage channel Buffered, on-chip attenuator for 12 V battery input JTAG port supports code download and debug Memory 64 kB Flash/EE memory options, 4-kB SRAM 10,000-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN On-chip peripherals LIN 2.1-compatible slave SPI GPIO port 1 × general-purpose timer Wake-up and watchdog timers On-chip power-on-reset See data sheet for additional features

Low Noise Precision Dual Op Amp Features: Very low noise density of 5 nV/√Hz at 1 kHz maximum  Excellent input offset voltage of 75 μV maximum Low offset voltage drift of 1 μV/°C maximum  Very high gain of 1500 V/mV minimum Outstanding CMR of 106 dB minimum  Slew rate of 2.4 V/μs typical  Gain bandwidth product of 5 MHz typical Industry-standard 8-lead dual pinout

The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

Dual 14 bit 3Gsps ADC w/JESD204B

ISOLATED GATE DRIVER 2.3A SOIC-6; Driver Configuration:Half Bridge; Peak Output Current:2.3A; Supply Voltage Min:2.5V; Supply Voltage Max:6.5V; Driver Case Style:WSOIC; No. of Pins:6Pins; Input Delay:57ns; Output Delay:66ns

Digital Isolators THREE-CHANNEL DIGITAL ISOLATORS

Quad-Channel Digital Isolator Features: Low power operation 5 V operation (see data sheet) 3 V operation (see data sheet) Bidirectional communication 3 V/5 V level translation High data rate: dc to 90 Mbps (NRZ) Precise timing characteristics 2 ns maximum pulse width distortion 2 ns maximum channel-to-channel matching See data sheet for additional features

Data Conversion IC Development Tools LTC2157-14: 14-bit, 250Msps, 1.8V Dual A

Development Boards & Kits - ARM Arduino based Wireless Development Board

The SC2200 belongs to the 4th-generation family of RF PA linearizers (RFPAL) that provides increased integration and functionality over the previous generations. The device is a dual-path linearizer that is a fully-adaptive, RFIN/RFOUT predistortion linearization solution optimized for a wide range of amplifiers, power levels, and communication protocols. It supports 2G to 4G standards (FDD and TDD) from 698MHz to 2700MHz as well as an expanded range of signal bandwidths from 60MHz down to 1.2MHz. The SC2200 accepts single-ended RF signals to eliminate baluns and features a mirrored pinout facilitating design of both paths. The device uses the PA output and input signals to adaptively generate an optimized correction function to minimize the PA’s distortion. Using RF-domain analog signal processing enables the SC2200 to operate over wide bandwidths and with very low power consumption. The dual linearizer is optimized for high-performance MIMO applications, including small cells, active antenna, and distributed antenna systems.SC2200 and SC1894 RF Power Amplifier Linearizers RF Power Amplifier Linearization Technology ApplicationsAmplifier: Class A/AB, DohertyAverage PA Output Power Examples: Cellular Infrastructure: 27dBm to 40dBmBTS Amplifiers, RRH, Booster Amplifiers, Repeaters, Small Cells, Microcells, Picocells, DAS, AAS and MIMO SystemsCellular InfrastructurePA Process: LDMOS, GaN, HBT, GaAs and InGaPSingle/Multicarrier, Multistandard: CDMA/EVDO, TD-SCDMA, WiMAX, WCDMA/HSDPA, LTE, and TD-LTEWide Range of PAs and Output Power