20 V, 4 A, Synchronous Step-Down DC-to-DC Regulator Features: Input voltage: 4.5 V to 20 V Integrated MOSFET: 44 m/11.6 m Reference voltage: 0.6 V ± 1% Continuous output current: 4 A 180° out of phase clock synchronizationSynchronizes to external clock: 200 kHz to 1.4 MHz Programmable switching frequency: 200 kHz to 1.4 MHz Precision enable and power good External compensation Internal soft start with external adjustable option Startup into a precharged output Supported by ADIsimPower design tool

20 V, 6 A, Synchronous, Step-Down DC-to-DC Regulator Features: Input voltage range: 4.5 V to 20 V Integrated MOSFET: 44 mΩ typical/11 mΩ typical Reference voltage: 0.6 V ± 1% Continuous output current: 6 A Programmable current-limit thresholdProgrammable switching frequency: 200 kHz to 1400 kHz Precision enable and power good External compensation Internal soft start with external adjustable option Startup into a precharged output Supported by ADIsimPower design tool

18 V, 12 A Step-Down Regulator with Programmable Current Limit Features: Input voltage: 4.5 V to 18 V Continuous output current: 12 A Integrated MOSFETs: 17 mΩ high-side/4.5 mΩ low-side 0.6 V ± 0.5% reference voltage Programmable switching frequency range: 200 kHz to 2200 kHz Enhanced transient response Programmable current limit with ±10% accuracy Precision enable and power good External compensation and soft start Start up into a precharged output Supported by the ADIsimPower design tool

Ultralow Power Energy Harvester PMU with MPPT and Charge Management Features: Boost regulator with maximum power point tracking (MPPT) with dynamic sensing or no sensing mode Hysteresis mode for best ultralight load efficiency Operating quiescent current of SYS pin (VIN > VCBP ≥ VMINOP): 510 nA Sleeping quiescent current of SYS pin (VCBP < VMINOP): 390 nA Input voltage operating range: 0.08 V to 3.3 V Fast cold start from 380 mV (typical) with charge pump Programmable shutdown point on MINOP pin based on the input open circuit voltage (OCV) 150 mA regulated output from 1.5 V to 3.6 V Battery terminal charging threshold (2.2 V to 5.2 V) to support charging storage elements Optional BACK_UP power path management Radio frequency (RF) transmission conducive to shutting down the switcher temporarily via microcontroller unit (MCU) communication

50 mA/500 mA, High Efficiency, Ultralow Power Step-Down Regulator Features: Input start-up voltage range: 2.15 V to 6.50 V Operates down to 2.00 V voltage Ultralow 180 nA quiescent current with no load Selectable output voltage of 1.2 V to 3.6V or 0.8V to 5.0V ±1.5% output accuracy over full temperature range in PWM mode Selectable hysteresis mode or PWM operation mode Output current Up to 50 mA in hysteresis mode Up to 500 mA in PWM mode VOUTOK flag monitors the output voltage 100% duty cycle operation mode 2 MHz switching frequency with optional synchronization input from 1.5 MHz to 2.5 MHz QOD option UVLO, OCP, and TSD protection 9-ball, 1.65 mm × 1.87 mm WLCSP −40°C to +125°C junction temperature

50 V, 130 kHz, 32.5 A, Robust, Over-The-Top Precision Op Amp Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 32.5 μA (typical) Low input offset voltage: ±60 μV maximum Low input offset voltage drift: ±1 μV/°C maximum (B grade) Low input voltage noise 6 Hz typical 1/f noise corner 1000 nV p-p typical at 0.1 Hz to 10 Hz GBP: 130 kHz typical for fTEST = 250 Hz Slew rate: 0.1 V/μs typical at ΔVOUT = 4 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±300 pA maximum Large signal voltage gain: 120 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade) Shutdown feature available for single 6-lead TSOT and dual 10-lead LFCSP packages

50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: (VSY): +3.15 V to +50 V (±25 V for PSRR) Low supply current: 1.5 mA per channel (typical) Low input offset voltage: ±40 μV maximum Low input offset voltage drift: ±0.4 μV/°C maximum Low voltage noise: 1/f noise corner: 6 Hz typical 150 nV p-p typical at 0.1 Hz to 10 Hz 7 nV/√Hz typical at 100 Hz (en) High speed GBP: 8 MHz typical Slew rate: 5.5 V/μs typical at ΔVOUT = 25 V Low power shutdown: 20 μA maximum Low input bias current: ±10 nA maximum Large signal voltage gain: 120 dB minimum CMRR: 118 dB, minimum PSRR: 123 dB, minimum Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

16-Bit, 15 MSPS, Module Data Acquisition Solution Features: Integrated fully differential ADC driver with signal scaling Wide input common range High common-mode rejection Single-ended to differential conversion 2.048 V input range with 4.096 V REFBUF Critical passive components 0.005% precision matched resistor array for FDA 9 mm × 9 mm, 0.8 mm pitch, 100-ball BGA package 4× footprint reduction versus discrete solution Low power, dynamic power scaling, power-down mode 143 mW typical at 15 MSPS Throughput: 15 MSPS, no pipeline delay INL: 0.4 LSB typical, 1 LSB maximum SINAD: 89 dB typical at 1 kHz THD: 115 dB at 1 kHz, 106 dB at 400 kHz Gain error: 0.005% FS typical Gain error drift: 1 ppm/C maximum On-board reference buffer with VCMO generation Serial LVDS interface Wide operating temperature range: 40C to +85C

10 GHz to 40 GHz, 1:4 Channel, 4 Frequency Multiplier/Filter Features: 4 input frequency multiplier with programmable harmonic filter Quad Differential Output PAs with independent Enable Control Input Frequency Range: 2.5 GHz to 10 GHz Output Frequency Range: 10 GHz to 40 GHz Input power: 20 dBm (50 ) Output power: 5 dBm differential (100 ) Harmonic rejection: 20 dBc to 40 dBc at all frequencies 3-Wire or 4-Wire SPI Control of all functions On-Chip Programmable State Machines for fast multiplier/filter and transmitter switching and control On-chip temperature sensor, output power detectors, and ADC DC power: 450 mW (2.5 V supply) 6 mm 6 mm, 40-terminal LGA package