RF Amplifier dig Variable-Gain

RF Amplifier Driver amp Chip, 5 - 20 GHz

Robust, Quad Channel Isolator W/ Input Disable & 0 Reverse Channels Features: High common-mode transient immunity: 100 kV/μs High robustness to radiated and conducted noise Low propagation delay 13 ns maximum for 5 V operation 15 ns maximum for 1.8 V operation 150 Mbps maximum guaranteed data rate Safety and regulatory approvals UL recognition 3000 V rms/3750 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE certificate of conformity DIN V VDE V 0884-11 (VDE V 0884-11):2017-01 VIORM = 849 V peak CQC certification per GB4943.1-2011 Backward compatibility ADuM140E1/ADuM141E1/ADuM142E1 pin-compatible with ADuM1400/ADuM1401/ADuM1402 Low dynamic power consumption 1.8 V to 5 V level translation High temperature operation: 125°C Fail-safe high or low options 16-lead, RoHS compliant, SOIC package Qualified for automotive applications

5 kV, 7-Channel, SPIsolator Digital Isolators for SPI (with 1/2 Aux channel directionality) Features: Supports up to 17 MHz SPI clock speed 4 high speed, low propagation delay, SPI signal isolation channels Three 250 kbps data channels 20-lead SOIC_IC package with 8.3 mm creepage High temperature operation: 125°C High common-mode transient immunity: >25 kV/µs Safety and regulatory approvals UL recognition per UL 1577 5000 V rms for 1 minute SOIC long package CSA Component Acceptance Notice 5A VDE certificate of conformity DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 Maximum working insulation voltage (VIORM): 849 V peak

5 KV rms Isolated Precision Half-Bridge Driver, 4 A Output Features: 4 A peak output current Working voltage High-side or low-side relative to input: 537 V peak High-side to low-side differential: 800 V peak High frequency operation: 1 MHz maximum  3.3 V to 5 V CMOS input logic 4.5 V to 18 V output drive  UVLO at 2.5 V VDD1 ADuM3223A/ADuM4223A UVLO at 4.1 V VDD2 ADuM3223B/ADuM4223B UVLO at 7.0 V VDD2 ADuM3223C/ADuM4223C UVLO at 11.0 V VDD2 Precise timing characteristics  54 ns maximum isolator and driver propagation delay 5 ns maximum channel-to-channel matching CMOS input logic levels  High common-mode transient immunity:>25 kV/μs Enhanced system-level ESD performance per IEC 61000-4-x  High junction temperature operation: 125°C  Thermal shutdown protection  Default low output Safety and regulatory approvals ADuM4223 wide-body, 16-lead SOIC UL recognition per UL 1577  5000 V rms for 1 minute SOIC long package  CSA Component Acceptance Notice 5A  VDE certificate of conformity  DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 VIORM = 849 V peak  Qualified for automotive applications

5 kV RMS Quad-Channel Digital Isolators Features: Enhanced system-level ESD performance per IEC 61000-4-x Safety and regulatory approvals (RI-16 package) UL recognition: 5000 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice #5A IEC 60601-1: 250 V rms (reinforced) IEC 60950-1: 400 V rms (reinforced) VDE Certificate of Conformity DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 VIORM = 846 V peak Low power operation 5 V operation 1.4 mA per channel maximum @ 0 Mbps to 2 Mbps 4.3 mA per channel maximum @ 10 Mbps 34 mA per channel maximum @ 90 Mbps 3.3 V operation 0.9 mA per channel maximum @ 0 Mbps to 2 Mbps 2.4 mA per channel maximum @ 10 Mbps 20 mA per channel maximum @ 90 Mbps Bidirectional communication 3.3 V/5 V level translation High temperature operation: 105°C High data rate: dc to 90 Mbps (NRZ) Precise timing characteristics 2 ns maximum pulse width distortion 2 ns maximum channel-to-channel matching High common-mode transient immunity: >25 kV/μs Output enable function 16-lead SOIC wide body package version (RW-16) 16-lead SOIC wide body enhanced creepage version (RI-16)

5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter Features: Wideband RF output frequency range: 5.9 GHz to 23.6 GHz Two upconversion modes Direct conversion from baseband I/Q to RF Single sideband upconversion from real IF LO input frequency range: 5.4 GHz to 14 GHz LO doubler for up to 28 GHz Matched 100 Ω balanced RF output, LO input, and IF input High impedance baseband inputs Sideband suppression and carrier feedthrough optimization Variable attenuator and power detector for Tx power control Programmable via 4-wire SPI interface 32-lead, 5 mm × 5 mm LFCSP microwave packaging

Integrated Dual RF Receiver Features: Dual receivers Maximum Receiver BW: 200 MHz Fully integrated, fractional-N, RF synthesizers Fully integrated clock synthesizer Multichip phase synchronization for RF LO and baseband clocks JESD204B datapath interface Tuneable range: 75 MHz to 6000 MHz

Programmable Transimpedance, Current to Bits Receiver Module Features: High performance, current input, data acquisition μModule that includes a TIA, analog filter, ADC driver, and ADC 3 selectable TZ settings: 2 k, 20 k, and 200 k Internal 1.8 V LDO for the ADC All passive components including supply decoupling Small form factor: 12.00 mm × 6.00 mm CSP_BGA Operation from a single 3.3 V supply Full-scale input current to 800 μA (TZ = 2 k) Fast input overload recovery High analog input current to 40 mAAnalog filter for noise reduction and antialias filtering Selectable 1.0 MHz and 100 MHz LPF bandwidth Low input referred current noise: 16 pA rms TZ = 200 k, 65,536 averages, 1 MHz analog filter Supports input pulse widths down to 10 ns 14-bit ADC with sample rate up to 125 MSPS Serial LVDS data output SPI control interface Quiescent power: 546 mW, LDO enabled Temperature range: 40C to +85C

10 MHz, 14.5 nV/Hz, Rail-to-Rail I/O, Zero Input Crossover Distortion Amplifier Features: Power supply rejection ratio (PSRR): 98 dB minimum  Common-mode rejection ratio (CMRR): 95 dB minimum Offset voltage: 120 μV maximum Single-supply operation: 2.7 V to 5.5 V  Dual-supply operation: ±1.35 V to ±2.75 V  Wide bandwidth: 10 MHz  Rail-to-rail input and output  Low noise 2 μV p-p from 0.1 Hz to 10 Hz  14.5 nV/√Hz at 1 kHz  Very low input bias current: 2 pA maximum