50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: (VSY): +3.15 V to +50 V (±25 V for PSRR) Low supply current: 1.5 mA per channel (typical) Low input offset voltage: ±40 μV maximum Low input offset voltage drift: ±0.4 μV/°C maximum Low voltage noise: 1/f noise corner: 6 Hz typical 150 nV p-p typical at 0.1 Hz to 10 Hz 7 nV/√Hz typical at 100 Hz (en) High speed GBP: 8 MHz typical Slew rate: 5.5 V/μs typical at ΔVOUT = 25 V Low power shutdown: 20 μA maximum Low input bias current: ±10 nA maximum Large signal voltage gain: 120 dB minimum CMRR: 118 dB, minimum PSRR: 123 dB, minimum Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

Integrated AMR Angle Sensor and Signal Conditioner with Differential Outputs Features: Contactless angular measurement High precision 180° angle sensor Typical angular error of ±0.1° Low output noise of 850 μV rms Sine and cosine differential outputs Ratiometric analog voltage outputs Negligible hysteresis SAR or Σ-Δ ADC compatible Temperature compensated AMR bridge Industrial temperature range: −40°C to +125°C Automotive temperature range: −40°C to +150°C EMI resistant Fault diagnostics VDD from 2.7 V to 5.5 V Minimal phase error of 0.85° at 30,000 rpm AEC-Q100 qualified for automotive applications Single chip solution Available in an 8-lead SOIC package

Integrated AMR Angle Sensor and Signal Conditioner Features: High precision 180° angle sensor Maximum angular error of 0.5° Analog sine and cosine outputs Ratiometric output voltages Low thermal and lifetime drift SAR or Σ- analog-to-digital converter (ADC) drive capable Magnetoresistive (MR) bridge temperature compensation mode Temperature range: −40°C to +150°C EMI resistant Fault diagnostics VDD from 2.7 V to 5.5 V Minimum phase delay Qualified for automotive applications Available in an 8-lead SOIC package

2-Channel, Isolated, Sigma Delta ADC with SPI Features: Two isolated, Σ-Δ analog-to-digital converters (simultaneously sampling ADCs) Integrated isoPower, isolated dc-to-dc converter On-chip temperature sensor 4-wire SPI serial interface Up to 4 ADE7912/ADE7913 devices clocked from a single crystal or an external clock Synchronization of multiple ADE7912/ADE7913 devices ±31.25 mV peak input range for current channel ±500 mV peak input range for voltage channels Reference drift: 10 ppm/°C typical Single 3.3 V supply 20-lead, wide-body SOIC package with 8.3 mm creepage Operating temperature: −40°C to +85°C Safety and regulatory approvals UL recognition – 5000 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A – IEC 61010-1: 300 V rms VDE certificate of conformity – DIN VDE V 0884-10 (VDE V 0884-10):2006-12 – VIORM = 846 V peak

24 GHz, ISM Band, Multichannel FMCW Radar Transmitter Features: 24 GHz to 24.25 GHz VCO (industrial, scientific, and medical (ISM) radio band) 2-channel 24 GHz power amplifier with 8 dBm output Single-ended outputs 2-channel muxed outputs with mute function Programmable output power LO output buffer RF frequency range: 24 GHz to 24.25 GHz Power control detector Auxiliary 8-bit ADC High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution PFD frequencies up to 110 MHz Normalized phase noise floor of −222 dBc/Hz Programmable charge pump currents ±5°C temperature sensor 4-wire SPI ESD performance HBM: 2000 V CDM: 250 V Qualified for automotive applications

9.5 RON, 16-Channel, Differential 8-Channel, 15 V/+12 V/5 V iCMOS Multiplexers Features: 9.5 Ω on resistance at 25°C Up to 300 mA of continuous current Fully specified at ±15 V/+12 V/±5 V 3 V logic-compatible inputs Rail-to-rail operation Break-before-make switching action 28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP

LC2MOS Quad SPST Switch Features: 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On-Resistance (< 70 O) Low ΔRON ( 9 Ω max) Fast Switching Times ton < 110 ns toff < 60 nsLow RON Match ( 3 Ω max) Low Power Dissipation Low Leakage Current (3 nA max) Low Charge Injection (6 pC max) Break-Before-Make Switching Action Latch Up Proof "A" grade options

LC2MOS 5 RON SPST Switch Features: Low On-Resistance (4 Ω) On-Resistance Flatness 0.2 Ω 44 V Supply Maximum Ratings ± 15 V Analog Signal Range Fully Specified @ ±5V, +12V, ±15V Ultralow Power Dissipation (18 µW) ESD 2 kV Continuous Current 100mA Fast Switching Times  ton < 70 ns toff < 60 ns TTL/CMOS-Compatible Inputs

LC2MOS 5 RON SPST Switches Features: Low On-Resistance (4 Ω) On-Resistance Flatness 0.2 Ω 44 V Supply Maximum Ratings ± 15 V Analog Signal Range Fully Specified @ ±5V, +12V, ±15V Ultralow Power Dissipation (18 µW) ESD 2 kV Continuous Current 100mA Fast Switching Times ton < 70 ns toff < 60 ns TTL/CMOS-Compatible Inputs Pin Compatible Upgrade for ADG412 and ADG432 16-Lead DIP, SOIC and Cerdip Packages

High Voltage, Latch-Up Proof, 16-Channel Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 64 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV all other pins