Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

0.1 GHz TO 2.5 GHz, 70 dB Logarithmic Detector / Controller Features: Wide bandwidth: 0.1 GHz to 2.5 GHz min High dynamic range: 70 dB to ±3.0 dB High accuracy: ±1.0 dB over 65 dB range (@ 1.9 GHz) Fast response: 40 ns full-scale typical Controller mode with error output Scaling stable over supply and temperature Wide supply range: 2.7 V to 5.5 V Low power: 40 mW at 3 V Power-down feature: 60 mW at 3 V

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

3 nV /Hz, Low Power Instrumentation Amplifier Features: Low power 2.3 mA maximum supply current Low noise 3.2 nV/√Hz maximum input voltage noise at 1 kHz 200 fA/√Hz current noise at 1 kHz Excellent ac specifications  10 MHz bandwidth (G = 1) 2 MHz bandwidth (G = 100) 0.6 µs settling time to 0.001% (G = 10) 80 dB CMRR to 20 kHz (G = 1) 35 V/µs slew rate High precision dc performance (AD8421BRZ) 94 dB CMRR minimum (G = 1) 0.2 μV/C maximum input offset voltage drift 1 ppm/C maximum gain drift (G = 1)500 pA maximum input bias current Inputs protected to 40 V from opposite supply ±2.5 V to 18 V dual supply (5 V to 36 V single supply) Gain set with a single resistor (G = 1 to 10,000) Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC Download AD8421-KGD Data Sheet Available As Known Good Die and fully guaranteed to data sheet specificationsAD8421-EP supports defense and aerospace applications (AQEC standard) Download AD8421-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/13625 DSCC Drawing Number

60 MHz, 2000 V/s, Monolithic Op Amp with Quad Low Noise Features: Wide bandwidth 60 MHz at gain of −1  33 MHz at gain of −10  Slew rate: 2000 V/μs  20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω  Fast settling: 100 ns to 0.1% (10 V step) Differential gain error: 0.03% at 4.4 MHz  Differential phase error: 0.16° at 4.4 MHz  Low offset voltage: 150 μV maximum (B Grade) Low quiescent current: 6.5 mA  Available in tape and reel in accordance with EIA-481-A standard

Digitally Programmable Sensor Signal Amplifier with EMI Filters Features: EMI filters at input pins Specified from −40°C to +140°C Low offset voltage: 10 μV maximum Low input offset voltage drift: 65 nV/°C maximum High CMRR: 94 dB minimum Digitally programmable gain and output offset voltage Programmable output clamp voltage Open and short wire fault detection Low-pass filtering Single-wire serial interface Stable with any capacitive load SOIC_N and LFCSP_VQ packages 4.5 V to 5.5 V operation

DC to 9 GHz, Vector Signal Generator Features: DC-coupled, 50 matched output Up to 4.3 dBm output power, 9.5 dBm at 9 GHz DAC core update rate: 12.0 GSPS (guaranteed minimum) in 2 NRZ mode Wide analog bandwidth DC to 9.0 GHz in 2 NRZ mode (12.0 GSPS DAC update rate) 1.0 GHz to 8.0 GHz in mix mode (6.0 GSPS DAC update rate) DC to 4.5 GHz in NRZ mode (6.0 GSPS DAC update rate) Power dissipation of 4.88 W in 2 NRZ mode (10 GSPS DAC update rate) Bypassable datapath interpolation 2, 3, 4, 6, 8, 12, 16, 24 Instantaneous (complex) signal bandwidth 2.25 GHz with device clock at 5 GHz (2 interpolation) 1.8 GHz with device clock at 6 GHz (3 interpolation) Fast frequency hopping Integrated biCMOS buffer amplifier