The ADA4350 is an analog front end for photodetectors or othersensors whose output produces a current proportional to thesensed parameter or voltage input applications where the systemrequires the user to select between very precise gain levels tomaximize the dynamic range.The ADA4350 integrates a FET input amplifier, a switching network,and an ADC driver with all functions controllable via a serialperipheral interface (SPI) or parallel control logic into a singleIC. The FET input amplifier has very low voltage noise and currentnoise making it an excellent choice to work with a wide range ofphotodetectors, sensors, or precision data acquisition systems.Its switching network allows the user individual selection of upto six different, externally configurable feedback networks; byusing external components for the feedback network, the usercan more easily match the system to their desired photodetector orsensor capacitance. This feature also allows the use of low thermaldrift resistors, if required.The design of the switches minimizes error sources so that theyadd virtually no error in the signal path. The output driver canbe used in either single-ended or a differential mode and isideal for driving the input of an ADC.The ADA4350 can operate from a single +3.3 V supply or a dual±5 V supply, offering user flexibility when choosing the polarity ofthe detector. It is available in a Pb-free, 28-lead TSSOP package andis specified to operate over the −40°C to +85°C temperature range.Multifunction pin names may be referenced by their relevantfunction only.Applications Current to voltage (I to V) conversions Photodiode preamplifiers Chemical analyzers Mass spectrometry Molecular spectroscopy Laser/LED receivers Data acquisition systems

The ADG5412F and ADG5413F contain four independently controlled single-pole/single-throw (SPST) switches. The ADG5412F has four switches that turn on with Logic 1 inputs. The ADG5413F has two switches with that turn on and two switches that turn off with Logic 1 inputs. Each switch conducts equally well in both directions when on, and each switch has an input signal range that extends to the supplies. The digital inputs are compatible with 3 V logic inputs over the full operating supply range.When no power supplies are present, the switch remains in the off condition, and the switch inputs are high impedance. Under normal operating conditions, if the analog input signal levels on any Sx pin exceed VDD or VSS by a threshold voltage, VT, then the switch turns off. Input signal levels up to +55 V or −55 V relative to ground are blocked, in both the powered and unpowered condition.The low on resistance of these switches, combined with on-resistance flatness over a significant portion of the signal range make them an ideal solution for data acquisition and gain switching applications where excellent linearity and low distortion are critical.Product Highlights Source pins are protected against voltages greater than the supply rails, up to −55 V and +55 V. Source pins are protected against voltages between −55 V and +55 V, in an unpowered state. Overvoltage detection with digital output indicates operating state of switches. Trench isolation guards against latch-up. Optimized for low on resistance and on-resistance flatness. The ADG5412F/ADG5413F can be operated from a dual supply of ±5 V up to ±22 V or a single power supply of 8 V up to 44 V.Applications Analog input/output modules Process control/distributed control systems Data acquisition Instrumentation Avionics Automatic test equipment Communication systems Relay replacement

The HMC1122 is a 6-bit digital attenuator operating from 0.1 GHz to 6 GHz with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC1122 is implemented in a silicon process, offering very fast settling time, low power consumption, and high ESD robustness. The device features safe state transitions and optimized for excellent step accuracy and high linearity over frequency and temperature range. The RF input and output are internally matched to 50 Ω and do not require any external matching components. The design is bidirectional; therefore, the RF input and output are interchangeable.The HMC1122 operates on a single supply ranging from 3.3 V to 5 V with no performance change due to an on-chip regulator.The device incorporates a driver that provides both serial and parallel control of the attenuator. The device also features a user-selectable power-up state and a serial output port for cascading other serial controlled components.The HMC1122 comes in a RoHS compliant, compact, 4 mm × 4 mm LFCSP package, and is pin compatible to the HMC624A.A fully populated evaluation board is available. Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors IF and RF designs

The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain compression, requiring 64 mA from a 5 V supply. The HMC7950 is self biased with only a single positive supply needed to achieve a drain current, IDD, of 64 mA. The HMC7950 also has a gain control option, VGG2. The HMC7950 amplifier input/outputs are internally matched to 50 Ω and dc blocked. It comes in a 6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is easy to handle and assemble.APPLICATIONS Test instrumentation Military and space

The HMC7992 is a general-purpose, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, four-throw (SP4T) switch in aleadless, surface-mount package. The switch is ideal for cellular infrastructure applications, offers high isolation of 45 dB typical at 2 GHz, and a low insertion loss of 0.6 dB at 2 GHz. It offers excellent power handling capability up to 6.0 GHz, with inputpower of 1 dB compression point (P1dB) of 35 dBm at 5 V operation. The HMC7992 has good low frequency input power handling below 0.1 GHz and can operate well down to 10 kHz, with a typical 1 dB compression of 21 dBm and an IIP3 of 37 dBm at 1 MHz.The on-chip circuitry allows the HMC7992 to operate at a single, positive supply voltage range from 3.3 V to 5 V, and as well as a single, positive control voltage from 0 V to 1.8 V/3.3 V/5.0 V. A 2:4 decoder integrated in the switch requires only two controlled input signals, with a positive control voltage range from 0 V to 1.8 V/3.3 V/5.0 V, to select one of the four radio frequency (RF)paths.Applications Cellular/4G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment

The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ±0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure

The HMC862A is a low noise, programmable frequency divider in a 3 mm × 3 mm, leadless, surface-mount package. The frequency divider, N, can be programmed to divide from 1, 2, 4, or 8 in the 0.1 GHz to 24 GHz input frequency range.The low phase noise, wide frequency range, and flexible division ratio make this device ideal for high performance and wideband communication systems.Applications Satellite communication systems Point to point and point to multipoint radios Military applications Test equipment

The HMC939ALP4E is a 5-bit digital attenuator with a 31 dBattenuation control range in 1 dB steps.The HMC939ALP4E offers optimum insertion loss, attenuationaccuracy, and input linearity over the specified frequency rangefrom 100 MHz to 33 GHz.The HMC939ALP4E requires dual supply voltages, VDD = +5 Vand VSS = −5 V, and provides CMOS-/TTL-compatible parallelcontrol interface by incorporating an on-chip driver.The HMC939ALP4E comes in a RoHS compliant, compact,4 mm × 4 mm LFCSP package. See HMC939A-DIE for the dieversion of HMC939ALP4E.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints.Patented temperature drift curvature correction technique and XFET technology minimize nonlinearity of the voltage change with temperature. The XFET architecture offers superior accuracy and thermal hysteresis to the band gap references. It also operates at lower power and lower supply headroom than the buried Zener references.The superb noise and the stable and accurate characteristics of the ADR42x make them ideal for precision conversion applications such as optical networks and medical equipment. The ADR42x trim terminal can also be used to adjust the out-put voltage over a ±0.5% range without compromising any other performance. The ADR42x series voltage references offer two electrical grades and are specified over the extended industrial temperature range of −40°C to +125°C. Devices have 8-lead SOIC or 30% smaller, 8-lead MSOP packages.APPLICATIONS Precision data acquisition systems High resolution converters Battery-powered instrumentation Portable medical instruments Industrial process control systems Precision instruments Optical network control circuits

The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long-term stability in SOIC and MSOP footprints.Patented temperature drift curvature correction technique and XFET technology minimize nonlinearity of the voltage change with temperature. The XFET architecture offers superior accuracy and thermal hysteresis to the band gap references. It also operates at lower power and lower supply headroom than the buried Zener references.The superb noise and the stable and accurate characteristics of the ADR42x make them ideal for precision conversion applications such as optical networks and medical equipment. The ADR42x trim terminal can also be used to adjust the out-put voltage over a ±0.5% range without compromising any other performance. The ADR42x series voltage references offer two electrical grades and are specified over the extended industrial temperature range of −40°C to +125°C. Devices have 8-lead SOIC or 30% smaller, 8-lead MSOP packages.Applications Precision data acquisition systems High resolution converters Battery-powered instrumentation Portable medical instruments Industrial process control systems Precision instruments Optical network control circuits