40 V, 200 mA, Low Noise, CMOS LDO Linear Regulator Features: Low noise: 11 μV rms independent of fixed output voltage PSRR of 88 dB at 10 kHz, 68 dB at 100 kHz, 50 dB at 1 MHz, VOUT ≤ 5 V, VIN = 7 V Input voltage range: 2.7 V to 40 V Maximum output current: 200 mA Initial accuracy: ±0.8% Accuracy over line, load, and temperature −1.2% to +1.5%, TJ = −40°C to +85°C ±1.8%, TJ = −40°C to +125°C Low dropout voltage: 200 mV (typical) at a 200 mA load, VOUT = 5 V User programmable soft start (LFCSP and SOIC only) Low quiescent current, IGND = 50 μA (typical) with no load Low shutdown current: 1.8 μA at VIN = 6 V, 3.0 μA at VIN = 40 V Stable with a small 2.2 μF ceramic output capacitor Fixed output voltage options: 1.8 V, 2.5 V, 3.3 V, 3.8 V, and 5.0 V 15 standard voltages between 1.2 V and 5.0 V are available Adjustable output from 1.2 V to VIN – VDO, output can be adjusted above initial set point Precision enable 2 mm × 2 mm, 6-lead LFCSP, 8-Lead SOIC, 5-Lead TSOT AEC-Q100 qualified for automotive applications

1.2 A, Ultralow Noise, High PSRR, Adjustable Output, RF Linear Regulator Features: Input voltage range: 2.3 V to 5.5 V Adjustable output voltage range (VOUT): 1.2 V to 3.3 V Maximum load current: 1.2 A Low noise 0.9 µV rms typical output noise from 100 Hz to 100 kHz 1.6 µV rms typical output noise from 10 Hz to 100 kHz Noise spectral density: 1.7 nV/√Hz from 10 kHz to 1 MHz Power supply rejection ratio (PSRR) 82 dB from 1 kHz to 100 kHz 55 dB at 1 MHz Dropout voltage: 120 mV typical at IOUT = 1.2 A, VOUT = 3.3 V Initial accuracy: ±0.6% at ILOAD = 10 mA Accuracy over line, load, and temperature: ±1.5% Operating supply current (IGND) 4.0 mA typical at 0 µA 7.0 mA typical at 1.2 A Low shutdown current: 0.2 μA typical Stable with a 10 µF ceramic output capacitor 10-lead, 3 mm × 3 mm LFCSP and 8-lead SOIC packages Precision enable Supported by ADIsimPower tool

2 A, Ultralow Noise, High PSRR, Adjustable Output, RF Linear Regulator Features: Input voltage range: 2.3 V to 5.5 V Adjustable output voltage range (VOUT): 1.2 V to 3.3 V Maximum load current: 2 A Low noise 0.9 μV rms total integrated noise from 100 Hz to 100 kHz 1.6 μV rms total integrated noise from 10 Hz to 100 kHz Noise spectral density: 1.7 nV/√Hz from 10 kHz to 1 MHz Power supply rejection ratio (PSRR) 68 dB from 1 kHz to 100 kHz 45 dB at 1 MHz Dropout voltage: 200 mV typical at IOUT = 2 A, VOUT = 3.3 V Initial accuracy: ±0.6% at ILOAD = 10 mA Accuracy over line, load, and temperature: ±1.5% See data sheet for additional features

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier Features: Frequency range: 2.7 GHz to 3.5 GHz POUT: 46 dBm typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Power gain: 25 dB typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Small signal gain: 34.5 dB typical at 2.7 GHz to 3.1 GHz PAE: 56% typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Supply voltage: VDD = 50 V at IDQ = 300 mA with 10% duty cycle 32-lead, 5 mm × 5 mm LFCSP_CAV package

GaAs, pHEMT, MMIC,1/2 W, 20 GHz to 44 GHz, Power Amplifier Features: Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) PSAT: 30 dBm (typical at 20 GHz to 34 GHz) Gain: 15 dB (typical at 34 GHz to 44 GHz) IP3: 40 dBm (typical) Supply voltage: 5 V at 600 mA Die size: 2.75 mm × 1.805 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

Ultralow Noise, Low Power Current Amplifier Features: Ultralow noise, low power current amplifier 80 fA/√Hz (typical) noise floor 140 μA (typical) of supply current when active (EE = 0 μW/cm2) 100 nA (typical) of supply current in standby Flexible output configuration Optimized for pulsed systems Nominal linear output: 240 μA Space-saving 2 mm × 2 mm LFCSP package