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Price
RoHS Y Y Y Y Y Y Y Y Y Y
Lead Status Y Y Y Y Y Y Y Y Y Y
Bandwidth(kHz) 1100
CMRR(min)(dB) 150 120
Common-mode voltage(max)(V) 110
Common-mode voltage(min)(V) -5
Comparators(#) 0
Features Bi-directional,Bidirectional,Enhanced PWM Rejection,Low-side Capable,Ultra precise Fully Differential,Overvoltage protection,Small Size,Super-beta,Ultra-low noise Small Size Cost Optimized,EMI Hardened,Zero Drift Overvoltage protection,Super Beta,e-Trim Small Size EMI Hardened,Overvoltage protection,Super Beta,e-Trim e-Trim Adjustable BW/IQ/IOUT,Shutdown
Gain error drift ()(max)(ppm/C) 1
Gain error(%) 0.01,0.015
Input offset ()(max)(V) 10,15,20,8 35
Input offset drift ()(typ)(V/C) 0.05,0.1
Iq(max)(mA) 3.2
Number of channels 1 1 1 1 1 2 2 2 2
Operating temperature range(C) -40 -40 -40 -40 -40 -40 -40 -40 -40 -40
Package size (L x W)(mm) 2.9 x 2.8 3 x 3 5.85 x 10.3 4.9 x 6 2.9 x 2.8 4.9 x 6 3 x 3 4.9 x 6 1.2 x 1.2 4 x 4
Package type SOT-23-THN VQFN SSOP SOIC SOT-23 SOIC WSON SOIC DSBGA VQFN
Product type Analog output
Rating Automotive Catalog Catalog Catalog Catalog Catalog Catalog Catalog Catalog Catalog
Slew rate(V/s) 5
Supply voltage(max)(V) 20
Supply voltage(min)(V) 2.7
TI functional safety category Functional Safety-Capable
Voltage gain(V/V) 10,100,20,200,50
TI.com inventory 20093 253349 3821 59345 77990 2645 47440 8629 10831 5280
Approx. price(US$) 1.593 | 1ku 3.99 | 1ku 3.95 | 1ku .154 | 1ku .45 | 1ku 1.14 | 1ku 2.614 | 1ku 1.6 | 1ku 1.35 | 1ku 1.39 | 1ku
Bandwidth at min gain(typ)(MHz) 22
Gain error ()(max)(%) 0.15
Gain nonlinearity ()(max)(%) 0.0002
Input bias current ()(max)(nA) 20
Input common mode headroom (to negative supply)(typ)(V) 2.5 -0.1 1 -0.1 1 0
Input common mode headroom (to positive supply)(typ)(V) -2.5 0.1 -1.4 -3.5 -1.4 0
Input offset drift ()(max)(V/C) 0.0000004
Iq(typ)(mA) 6
Noise at 0.1 Hz to 10 Hz(typ)(VPP) 0.1
Noise at 1 kHz(typ)(nVHz) 3.2
Output swing headroom (to negative supply)(typ)(V) 1.4 0.06 0.2 0.2 0.2 0.02
Output swing headroom (to positive supply)(typ)(V) -1.4 -0.2 -0.2 0.2 0.02
Package area(mm^2) 9 60.255 29.4 8.12 29.4 9 29.4 1.44 16
Pin count 16 16 8 5 8 8 8 9 16
TI package name RGT D DBV D DRG D YBJ RGV
Type Resistor
Voltage gain(max)(V/V) 1000
Voltage gain(min)(V/V) 0.2
Vs(max)(V) 36
Vs(min)(V) 8
CMTI(min)(kV/s) 100
Data rate(max)(MBits) 12
Data rate(max)(Mbps) 12
Isolation rating Reinforced
Surge isolation voltage (VIOSM)(VPK) 12800
Transient isolation voltage (VIOTM)(VPK) 7071
Withstand isolation voltage (VISO)(Vrms) 5000
Working isolation voltage (VIOWM)(Vrms) 1500
Architecture CMOS CMOS Bipolar FET Bipolar CMOS Current FB
CMRR(typ)(dB) 110 134 140 140 140 120 64
GBW(typ)(MHz) 16 0.75 3.6 11 3.6 13 730
Iout(typ)(A) 0.05 0.025 0.03 0.025 0.065
Iq per channel(typ)(mA) 2 0.09 0.22 1.8 0.22 1.22 16.5
Rail-to-rail Out In,Out Out In to V-,Out Out In,Out No
Slew rate(typ)(V/s) 9 0.35 3.2 20 4 4.5 3000
THD + N at 1 kHz(typ)(%) 0.0001 0.0004 0.00005 0.0004 0.00025
Total supply voltage (+5 V = 5, 5 V = 10)(max)(V) 36 36 36 36 5.5 13
Total supply voltage (+5 V = 5, 5 V = 10)(min)(V) 4.5 4.5 4.5 4.5 1.7 4.5
Vn at 1 kHz(typ)(nVHz) 4.5 38 8 5.1 8 6.5 2.4
Vos (offset voltage at 25C)(max)(mV) 2 0.01 0.025 0.12 0.015 0.02 5
Input bias current(max)(pA) 600 500 10 400 0.8 25000000
Offset drift(typ)(V/C) 2 0.08 0.35 0.04 0.16 3
2nd harmonic(dBc) 70
3rd harmonic(dBc) 73
Acl, min spec gain(V/V) 1
BW at Acl(MHz) 730
Frequency of harmonic distortion measurement(MHz) 10
Iout(typ)(mA) 1000
Vn at flatband(typ)(nVHz) 2.4