BQ28Z610DRZR-R1

Texas Instruments BQ28Z610DRZR-R1

BQ298006RUGR

Texas Instruments BQ298006RUGR

BQ298018RUGR

Texas Instruments BQ298018RUGR

BQ7694203PFBR

Texas Instruments BQ7694203PFBR

BQ7694204PFBR

Texas Instruments BQ7694204PFBR

BQ7695202PFBR

Texas Instruments BQ7695202PFBR

BQ771818DPJT

Texas Instruments BQ771818DPJT

BQ7721600PWR

Texas Instruments BQ7721600PWR

BQ7790521PW

Texas Instruments BQ7790521PW

BUF634AIDDAR

Texas Instruments BUF634AIDDAR

Price
RoHS Y Y Y Y Y Y Y Y Y Y
Lead Status Y Y Y Y Y Y Y Y Y Y
Approx. price(US$) 1.553 | 1ku .18 | 1ku .152 | 1ku 1.737 | 1ku 1.737 | 1ku 2 | 1ku .53 | 1ku 1.05 | 1ku .606 | 1ku 1.1 | 1ku
Battery capacity(Max)(mAh) 14000
Package Group SON|12 X2QFN|8 TQFP|48 SO PowerPAD|8,SOIC|8,SON|8
Rating Catalog Catalog Catalog Catalog Catalog Catalog Catalog Catalog Catalog Catalog
Implementation Pack
External capacity indication None
Communication interface I2C SPI SPI I2C,HDQ,SPI
Number of series cells 1-2 Cells
Operating temperature range(C) -40 to 85 -40 -40 -40 -40 to 85 -40 -40 -40 -40 to 125
Features Cell Balancing,Impedance Track algorithm,Integrated Protector,SHA-1 Authentication Overvoltage,Undervoltage,Overcurrent during charge (OCC),Overcurrent during discharge (OCD),Short-circuit Discharge (SCD),Over-temperature (OT),FET drive High-side FET drive,Over-temperature (OT),Overcurrent during charge (OCC),Overcurrent during discharge (OCD),Overvoltage,Short-circuit Discharge (SCD),Undervoltage Digital output,High-side driver,I2C support,Integrated ADC,LDO output,Multi-cell support,One-time-programmable (OTP) memory,Open-wire detection,Overcurrent in charging protection,Overcurrent in discharging protection,Overtemperature protection,Overvoltage protection,Scratchpad memory,Short-current detection,Temperature sensing,Undertemperature protection,Undervoltage protection Digital output,High-side driver,I2C support,Integrated ADC,LDO output,Multi-cell support,One-time-programmable (OTP) memory,Open-wire detection,Overcurrent in charging protection,Overcurrent in discharging protection,Overtemperature protection,Overvoltage protection,Scratchpad memory,Short-current detection,Temperature sensing,Undertemperature protection,Undervoltage protection Cell balancing,High-side driver,I2C support,Integrated ADC,Multi-cell support,Open-wire detection,Overcurrent in charging protection,Overcurrent in discharging protection,Overtemperature protection,Overvoltage protection,Programmable EEPROM or EPROM,Short-current detection,Temperature sensing,Undertemperature protection,Undervoltage protection Overvoltage,Single pin output drive,Stackable FET drive,Open wire (OW),Over-temperature (OT),Overvoltage,Stackable,Under-temperature (UT),Undervoltage FET drive,Open wire (OW),Over-temperature (OT),Overcurrent during discharge (OCD),Overvoltage,Short-circuit Discharge (SCD),Stackable,Under-temperature (UT),Undervoltage Adjustable BW/IQ/IOUT
Cell balancing External,Internal
Package size mm2 mm2 mm2
Cell chemistry Li-Ion/Li-Polymer
Battery capacity(Min)(mAh) 100
Typical operating current(Typ)(uA) 5 250
Function Protection Protection Protection Protection Protection
Vin(Max)(V) 5.5 80
Overvoltage protection 4.3,4.4,4.475,4.5 4.4 4.3 4.325 3.7
Number of series cells(Min) 1 3
Number of series cells(Max) 1 16
Battery overvoltage protection(max)(V) 5.2 5.5 5.5 4.65 5.1 4.575
Battery overvoltage protection(min)(V) 3.75 1 1 3.85 3.55 3
Number of series cells(max) 1 10 10 3,4,5 16 4,5
Number of series cells(min) 1 3 3 2,3,4,5 3 3,4,5
Operating current(typ)(A) 5 250 250 1 1 6
Package area(mm^2) 2.25 81 81 12 49.92 41.6
Package size (L x W)(mm) 1.5 x 1.5 9 x 9 9 x 9 4 x 3 7.8 x 6.4 6.5 x 6.4
Package type X2QFN TQFP TQFP WSON TSSOP TSSOP
Pin count 8.0 48.0 48.0 8.0 24.0 20.0
TI functional safety category Functional Safety-Capable Functional Safety-Capable Functional Safety-Capable
Vin(max)(V) 5.5 55 55 25 85 25
TI.com inventory 74435 7343 3365 2000 55374 27683
Device type Cell monitor and balancer Cell monitor and balancer
Battery over-voltage protection(Max)(V) 5.5
Battery over-voltage protection(Min)(V) 1
Output current(Typ)(mA) 250
Offset drift(Typ)(uV/C) 175
Input bias current(Typ)(pA) 5000000
BW @ Acl(MHz) 210
Architecture Fixed Gain/Buffer
Total supply voltage(Max)(+5V=5, +/-5V=10) 36
Slew rate(Typ)(V/us) 3750
Number of channels(#) 1
Rail-to-rail No
Vn at flatband(Typ)(nV/rtHz) 3.4
3rd harmonic(dBc) -79
Total supply voltage(Min)(+5V=5, +/-5V=10) 4.5
GBW(Typ)(MHz) 240
Iq per channel(Typ)(mA) 8.5
Acl, min spec gain(V/V) 1
Vn at 1 kHz(Typ)(nV/rtHz) 3.4
Iq per channel(Max)(mA) 12
@ MHz 0.02
Input bias current(Max)(pA) 1600000
2nd harmonic(dBc) -77
Vos (offset voltage @ 25 C)(Max)(mV) 60