250 kSPS, 12- Bit ADC in 6 Lead SC70 Features: Throughput Rate: 250 kSPS Specified for VDD of 2.35 V to 5.25 V Low Power: 3 mW typ at 250 KSPS with 3 V Supplies 12.5 mW typ at 250 KSPS with 5 V Supplies Wide Input Bandwidth: 70 dB SNR at 100 kHz Input Frequency No Pipeline Delays Flexible Power/Serial Clock Speed Management High Speed Serial Interface SPI®/QSPI™/MICROWIRE™/DSP Compatible Standby Mode: 1 µA max 6-Lead SC70 Package 8-Lead µSOIC Package

4-Channel 200 kSPS, 12-Bit A/D Converter with Sequencer in 16-Lead TSSOP Features: Fast throughput rate: 200 kSPS Specified for AVDD of 2.7 V to 5.25 V Low power 3.6 mW max at 200 kSPS with 3 V supply 7.5 mW max at 200 kSPS with 5 V supply 4 (single-ended) inputs with sequencer Wide input bandwidth 70 dB Min SNR at 50 kHz input frequency Flexible power/serial clock speed management No pipeline delays High speed serial interface SPI® -/QSPI™-/ MICROWIRE™-/DSP-compatible Shutdown mode: 0.5 μA max 16-lead TSSOP package Qualified for automotive applicationsAD7923-EP supports defense and aerospace applications (AQEC standard) Download AD7923-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Product change notification Qualification data available on request V62/12647 DSCC Drawing Number

High Voltage, Current Shunt Monitor Features: ±4000 V HBM ESD High common-mode voltage range −2 V to +65 V operating −3 V to +68 V survival Buffered output voltage Wide operating temperature range 8-Lead SOIC_N: −40°C to +125°C Excellent ac and dc performance 6 μV/°C typical offset drift −8 ppm/°C typical gain drift 120 dB typical CMRR at dc Qualified for Automotive Applications

Single-Supply, Low Cost Instrumentation Amplifier Features:Gain set with 1 resistor per amplifierGain = 5 to 1000InputsVoltage range to 150 mV below negative rail25 nA maximum input bias current30 nV/Hz, RTI noise @ 1 kHzPower suppliesDual supply: 2V to 12Single supply: 3V to 24V500 A maximum supply current

Single-Lead, Heart Rate Monitor Front End Features: Fully integrated single-lead ECG front end Low supply current: 170 μA (typical) Common-mode rejection ratio: 80 dB (dc to 60 Hz) Two or three electrode configurations High signal gain (G = 100) with dc blocking capabilities 2-pole adjustable high-pass filter Accepts up to ±300 mV of half cell potential Fast restore feature improves filter settling Uncommitted op amp 3-pole adjustable low-pass filter with adjustable gain Leads off detection: ac or dc options Integrated right leg drive (RLD) amplifier Single-supply operation: 2.0 V to 3.5 V Integrated reference buffer generates virtual ground Rail-to-rail output Internal RFI filter 8 kV HBM ESD rating Shutdown pin 20-lead 4 mm × 4 mm LFCSP package Qualified for automotive applications

Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifiers Features: Wide input range beyond supplies Rugged input overvoltage protection Low supply current: 200 μA maximum per channel Low power dissipation: 0.54 mW at VS = 2.7 V Bandwidth: 550 kHz CMRR: 86 dB minimum, dc to 10 kHz System offset voltage: ±2 μV/°C maximum (B Grade) Low gain drift: 1 ppm/°C maximum (B Grade) Enhanced slew rate: 1.1 V/μs Wide power supply range Single supply: 2.0 V to 36 V Dual supplies: ±2 V to ±18 V

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process