Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Fast, Voltage-Out, DC to 440 MHz, 95 dB Logarithmic Amplifier Features: Multistage demodulating logarithmic amplifier Voltage output, rise time <15 ns High current capacity: 25 mA into grounded RL 95 dB dynamic range: –91 dBV to +4 dBV Single supply of 2.7 V min at 8 mA typ DC to 440 MHz operation, ±0.4 dB linearity Slope of +24 mV/dB, intercept of –108 dBV Highly stable scaling over temperature Fully differential dc-coupled signal path 100 ns power-up time, 1 mA sleep current

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

3 nV /Hz, Low Power Instrumentation Amplifier Features: Low power 2.3 mA maximum supply current Low noise 3.2 nV/√Hz maximum input voltage noise at 1 kHz 200 fA/√Hz current noise at 1 kHz Excellent ac specifications  10 MHz bandwidth (G = 1) 2 MHz bandwidth (G = 100) 0.6 µs settling time to 0.001% (G = 10) 80 dB CMRR to 20 kHz (G = 1) 35 V/µs slew rate High precision dc performance (AD8421BRZ) 94 dB CMRR minimum (G = 1) 0.2 μV/C maximum input offset voltage drift 1 ppm/C maximum gain drift (G = 1)500 pA maximum input bias current Inputs protected to 40 V from opposite supply ±2.5 V to 18 V dual supply (5 V to 36 V single supply) Gain set with a single resistor (G = 1 to 10,000) Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC Download AD8421-KGD Data Sheet Available As Known Good Die and fully guaranteed to data sheet specificationsAD8421-EP supports defense and aerospace applications (AQEC standard) Download AD8421-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/13625 DSCC Drawing Number

High Performance, Low Power, Rail-to-Rail Precision Instrumentation Amplifier Features: Low power: 330 μA maximum quiescent current Rail-to-rail output Low noise and distortion 8 nV/√Hz maximum input voltage noise at 1 kHz 0.15 μV p-p RTI noise (G = 100) 0.5 ppm nonlinearity with 2 kΩ load (G = 1) Excellent ac specifications 80 dB minimum CMRR at 10 kHz (G = 1) 2.2 MHz bandwidth (G = 1) High precision dc performance (AD8422BRZ) 150 dB minimum CMRR (G = 1000) 0.04% maximum gain error (G = 1000) 0.3 μV/°C maximum input offset drift 0.5 nA maximum input bias current Wide supply range 4.6 V to 36 V single supply ±2.3 V to ±18 V dual supply Input overvoltage protection: 40 V from opposite supply Gain range: 1 to 1000 Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC_N

60 MHz, 2000 V/s, Monolithic Op Amp with Quad Low Noise Features: Wide bandwidth 60 MHz at gain of −1  33 MHz at gain of −10  Slew rate: 2000 V/μs  20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω  Fast settling: 100 ns to 0.1% (10 V step) Differential gain error: 0.03% at 4.4 MHz  Differential phase error: 0.16° at 4.4 MHz  Low offset voltage: 150 μV maximum (B Grade) Low quiescent current: 6.5 mA  Available in tape and reel in accordance with EIA-481-A standard

High Speed, Low Power Monolithic Op Amp Features:Superior PerformanceHigh Unity Gain BW: 50 MHzLow Supply Current: 5.3 mAHigh Slew Rate: 300 V/sExcellent Video SpecificationsDrives Any Capacitive LoadFast Settling Time to 0.1% (10 V Step): 65 nsExcellent DC PerformanceHigh Open-Loop Gain 5.5 V/mV (PLOAD = 1 k)Low Input Offset Voltage: 0.5 mVSpecified for 5 V and 15 V OperationAvailable in a Wide Variety of OptionsPlastic DIP and SOIC PackagesCerdip PackageDie FormMIL-STD-883B ProcessingTape & Reel (EIA-481A Standard)Dual Version Available: AD827 (8 lead)Enhanced Replacement for LM6361

+5 Volt, Serial Input, Dual 12-Bit DAC Features: Complete Dual 12-Bit DAC No External Components +5 Single-Supply Operation ±10% 4.095 V Full Scale (1 mV/LSB) Buffered Voltage Outputs Low Power: 5 mW/DAC Space Saving 1.5mm Height SO-14 Package