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LMK5C33216RGCT

Texas Instruments LMK5C33216RGCT

Price
RoHS Y Y Y Y Y Y Y Y Y Y
Lead Status Y Y Y Y Y Y Y Y Y Y
Bandwidth(kHz) 30 150 350,210,150,105 350,210,150,105 350,210,150,105
CMRR(min)(dB) 100 84
Common-mode voltage(max)(V) 26 26
Common-mode voltage(min)(V) 2.7 -0.2
Comparators(#) 0 0 0 0 0
Features High precision,Input supply Dual Channel,Low-side Capable Bi-directional,Dual channel,Low-side Capable Bi-directional,Dual channel,Low-side Capable Bi-directional,Dual channel,Low-side Capable Automotive load dump compatibility,Inrush current control,Linear control,Overvoltage protection,Reverse current blocking,Reverse polarity protection Automotive load dump compatibility,Inrush current control,Linear control,Overvoltage protection,Reverse current blocking,Reverse polarity protection 1 JESD204B
Gain error drift ()(max)(ppm/C) 10 20
Gain error(%) 0.3 0.8 1 1 1
Input offset ()(max)(V) 170 150
Input offset drift ()(typ)(V/C) 0.5 0.2
Iq(max)(mA) 0.14 0.5 0.495 0.495
Number of channels 1 2 2 2 1
Operating temperature range(C) -40 -40 -40 to 125 -40 to 125 -40 to 125 -40 -40 -40 -40 -40
Package size (L x W)(mm) 2.9 x 2.8 2 x 2 3 x 3 3 x 3 2 x 2 3 x 6.4 9 x 9
Package type SOT-23 WSON WSON WSON WQFN TSSOP VQFN
Product type Analog output Analog output Analog output Analog output Analog output Ideal diode controller Ideal diode controller
Rating Catalog Catalog Catalog Catalog Catalog Automotive Automotive Catalog Catalog Catalog
Slew rate(V/s) 0.4 2
Supply voltage(max)(V) 26 5.5 3.465
Supply voltage(min)(V) 2.7 2.7 3.135
TI functional safety category
Voltage gain(V/V) 100 100
TI.com inventory 28250 23750 314320 314320 314320 13492 10784 56306 10543 839
Approx. price(US$) .907 | 1ku .378 | 1ku .198 | 1ku .198 | 1ku .198 | 1ku .886 | 1ku .85 | 1ku 1.19 | 1ku .42 | 1ku 32 | 1ku
Common mode voltage(Min)(V) -0.2 -0.2 -0.2
Input offset (+/-)(Max)(uV) 150 150 150
Gain error drift (+/-)(Max)(ppm/C) 20 20 20
Package size mm2 mm2 mm2
Common mode voltage(Max)(V) 26 26 26
Gain(V/V) 100,20,200,50 100,20,200,50 100,20,200,50
CMRR(Min)(dB) 84 84 84
Iq(Max)(mA) 0.5 0.5 0.5
Supply voltage(Min)(V) 2.7 2.7 2.7
Number of channels(#) 2 2 2
Package Group VSSOP|10,WSON|10 VSSOP|10,WSON|10 VSSOP|10,WSON|10
Input offset drift (+/-)(Typ)(uV/C) 0.2 0.2 0.2
Supply voltage(Max)(V) 5.5 5.5 5.5
Design support EVM,Simulation Model EVM,Simulation Model
Device type Ideal diode controller Ideal diode controller
FET External back-to-back FET External back-to-back FET
IGate pulsed(typ)(A) 2.6 2.6
IGate sink(typ)(mA) 2670 2670
IGate source(typ)(A) 20000 20000
Imax(A) 300 300
Iq(typ)(mA) 0.412 0.412
Package area(mm^2) 9 9 4 19.2 81
Pin count 12 12 12.0 8.0 64.0
Shutdown current (ISD) (mA)(A) 0.003 0.003
VGS(max)(V) 15 15
VSense reverse(typ)(mV) -4.5 -4.5
Vin(max)(V) 65 65
Vin(min)(V) 3 3
Current consumption(mA) 106
Frequency(max)(MHz) 2900
Frequency(min)(MHz) 2300
Gain(typ)(dB) 18
Noise figure(typ)(dB) 3.2
OIP3(typ)(dBm) 33
P1dB(typ)(dBm) 18
Type Active Balun
Additive RMS jitter(typ)(fs) 19.2
Core supply voltage(V) 1.8,2.5,3.3
Function Clock buffer,Level translator,Single-ended Clock network synchronizer
Input type LVCMOS HCSL,LVCMOS,LVDS,LVPECL,XTAL
Number of outputs 2 16
Output frequency(max)(MHz) 250 3000
Output skew(ps) 25
Output supply voltage(V) 1.8,2.5,3.3
Output type LVCMOS CML,LVCMOS,LVDS,LVPECL
Number of input channels 2
Output frequency(min)(MHz) 0.000000000001
RMS jitter(fs) 50