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Price
RoHS Y Y Y Y Y Y Y Y Y Y
Lead Status Y Y Y Y Y Y Y Y Y Y
CMTI(min)(V/s) 100000
CMTI(min)(kV/s) 100
Current consumption per channel (1 Mbps)(typ)(mA) 5.75
Current consumption per channel (DC)(typ)(mA) 5
Data rate(max)(MBits) 100
Data rate(max)(Mbps) 100
Default output High,Low
Forward/reverse channels 3 forward / 1 reverse
Integrated isolated power Yes
Isolation rating Basic
Number of channels 4 2 2 2 2 1
Operating temperature range(C) -40 -40 -40 -40 to 125 -40 -40 to 125 -40 to 85 -40 -40 -40
Package area(mm^2) 106.09 108.16 4 14.7 9 9 4
Package size (L x W)(mm) 10.3 x 10.3 10.4 x 10.4 2 x 2 3 x 4.9 3 x 3 3 x 3 2 x 2
Package type SO-MOD FCCSP WSON VSSOP WSON WSON WQFN
Pin count 16.0 161.0 8.0 8.0 12 12 12.0
Propagation delay time(typ)(s) 0.013
Rating Automotive Catalog Catalog Automotive Catalog Automotive,Catalog Catalog Automotive Automotive Catalog
Supply voltage(max)(V) 5.5
Supply voltage(min)(V) 3
Surge isolation voltage (VIOSM)(VPK) 10000
TI functional safety category Functional Safety-Capable Functional Safety-Capable Functional Safety-Capable
Transient isolation voltage (VIOTM)(VPK) 7071
Type Digital isolator Active Balun
Withstand isolation voltage (VISO)(Vrms) 5000
Working isolation voltage (VIOWM)(Vrms) 1000
TI.com inventory 250 3546 14556 2286 15290 13492 10784 56306
Approx. price(US$) 6.16 | 1ku 14.43 | 1ku .066 | 1ku .116 | 1ku .046 | 1u .1 | 1ku .047 | 1ku .886 | 1ku .85 | 1ku 1.19 | 1ku
ADC sampling rate(ksps) 25000
Arm CPU Arm Cortex-R4F at 200 MHz
Coprocessors Radar Hardware Accelerator
Frequency range 60 - 64 GHz
Interface type CAN-FD,I2C,LVDS,QSPI,SPI,UART
Number of receivers 4
Number of transmitters 3
Power supply solution LP87745-Q1
RAM(kByte) 1472
TX power(dBm) 12
Input bias current ()(max)(nA) 25
Iq per channel(typ)(mA) 0.2 0.3
Output type Open-collector,Open-drain Open-collector
Propagation delay time(s) 1 1
Rail-to-rail In to V- No In to V- In to V- In to V-
VICR(max)(V) 34.5
VICR(min)(V) 0
Vos (offset voltage at 25C)(max)(mV) 2.5 3
Vs(max)(V) 36
Vs(min)(V) 2
Vs(Max)(V) 36
Input bias current (+/-)(Max)(nA) 25
Package Group SOIC|8,SOT-23-THIN|8,TSSOP|8,VSSOP|8,WSON|8 SOIC|8,TSSOP|8,VSSOP|8 SOIC|8,TSSOP|8,VSSOP|8
VICR(Max)(V) 0
Vs(Min)(V) 2
Features Standard comparator Cost Optimized,EMI Hardened,Standard Amps Cost Optimized,EMI Hardened,Standard Amps Cost Optimized,EMI Hardened,Standard Amps Automotive load dump compatibility,Inrush current control,Linear control,Overvoltage protection,Reverse current blocking,Reverse polarity protection Automotive load dump compatibility,Inrush current control,Linear control,Overvoltage protection,Reverse current blocking,Reverse polarity protection
VICR(Min)(V) 34.5
Package size mm2 mm2 mm2
Iq per channel(Typ)(mA) 0.2 0.3 0.3
Number of channels(#) 2 2 2
Vos (offset voltage @ 25 C)(Max)(mV) 2.5 3 3
Architecture Bipolar Bipolar Bipolar
CMRR(typ)(dB) 94
GBW(typ)(MHz) 1.2
Input bias current(max)(pA) 35000
Input common mode headroom (to negative supply)(typ)(V) 0
Input common mode headroom (to positive supply)(typ)(V) -1.5
Iout(typ)(A) 0.03
Offset drift(typ)(V/C) 3.5
Output swing headroom (to negative supply)(typ)(V) 0.005
Output swing headroom (to positive supply)(typ)(V) -1.4
Slew rate(typ)(V/s) 0.5
Total supply voltage (+5 V = 5, 5 V = 10)(max)(V) 36
Total supply voltage (+5 V = 5, 5 V = 10)(min)(V) 3
Vn at 1 kHz(typ)(nVHz) 40
Total supply voltage(Max)(+5V=5, +/-5V=10) 36 36
GBW(Typ)(MHz) 1.2 1.2
Offset drift(Typ)(uV/C) 3.5 3.5
Vn at 1 kHz(Typ)(nV/rtHz) 40 40
CMRR(Min)(dB) 75 75
Iq per channel(Max)(mA) 0.5 0.46
Output swing headroom (to positive supply)(Typ)(V) -1.4 -1.4
Total supply voltage(Min)(+5V=5, +/-5V=10) 3 3
Input bias current(Typ)(pA) 10000 10000
Slew rate(Typ)(V/us) 0.5 0.5
CMRR(Typ)(dB) 100 94
Input common mode headroom (to negative supply)(Typ)(V) 0 0
Output current(Typ)(mA) 30 30
Input common mode headroom (to positive supply)(Typ)(V) -1.5 -1.5
Output swing headroom (to negative supply)(Typ)(V) 0.005 0.005
Input bias current(Max)(pA) 35000
Design support EVM,Simulation Model EVM,Simulation Model
Device type Ideal diode controller Ideal diode controller
FET External back-to-back FET External back-to-back FET
IGate pulsed(typ)(A) 2.6 2.6
IGate sink(typ)(mA) 2670 2670
IGate source(typ)(A) 20000 20000
Imax(A) 300 300
Iq(max)(mA) 0.495 0.495
Iq(typ)(mA) 0.412 0.412
Product type Ideal diode controller Ideal diode controller
Shutdown current (ISD) (mA)(A) 0.003 0.003
VGS(max)(V) 15 15
VSense reverse(typ)(mV) -4.5 -4.5
Vin(max)(V) 65 65
Vin(min)(V) 3 3
Current consumption(mA) 106
Frequency(max)(MHz) 2900
Frequency(min)(MHz) 2300
Gain(typ)(dB) 18
Noise figure(typ)(dB) 3.2
OIP3(typ)(dBm) 33
P1dB(typ)(dBm) 18