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LP875650RNFTQ1

Texas Instruments LP875650RNFTQ1

OPA462IDDA

Texas Instruments OPA462IDDA

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Texas Instruments OPA462IDDAR

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LM2904BQDRQ1

Texas Instruments LM2904BQDRQ1

Price
RoHS Y See ti.com See ti.com Y Y See ti.com See ti.com Y Y Y
Lead Status Y See ti.com See ti.com See ti.com Y See ti.com See ti.com Y Y Y
Step-up DC/DC converter 0
Features Diagnostics,Dynamic Voltage Scaling,Eco-mode,Enable,Enable Pin,I2C Control,Over Current Protection,Power Good,Power Sequencing,Power Supply and System Monitoring,Spread-Spectrum Clock (SSC) Generation,Thermal Shutdown,UVLO Fixed Shutdown Shutdown Cost Optimized,EMI Hardened,Small Size 1.8-V compatible control inputs,Break-before-make,Fail-safe logic 1.8-V compatible control inputs,Break-before-make,Fail-safe logic Low-side Capable Cost Optimized,EMI Hardened,Standard Amps
Step-down DC/DC controller 0
Processor name Jacinto 6+, TDA2+
Vin(Max)(V) 5.5
Rating Automotive Catalog Catalog Catalog Automotive Catalog Catalog Catalog Automotive Automotive
Package size mm2 mm2 mm2 mm2 mm2 mm2 mm2 mm2
Vin(Min)(V) 2.8
Processor supplier Texas Instruments
Vout(Max)(V) 3.36
Step-up DC/DC controller 0
LDO 0
Configurability Factory programmable,Software configurable
Switching frequency(Typ)(kHz) 2000
Iout(Max)(A) 16
Vout(Min)(V) 0.6
Approx. price(US$) 2.75 | 1ku 9.80 | 1ku 9.80 | 1ku 1.25 | 1ku 1.134 | 1ku 0.34 | 1ku 0.99 | 1ku 1.14 | 1ku 0.23 | 1ku 0.11 | 1ku
Iq(Typ)(mA) 0.0067
Shutdown current(Typ)(uA) 1.4
Step-down DC/DC converter 2
Operating temperature range(C) -40 to 125 -40 to 85 -40 to 85 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125
Regulated outputs(#) 2
Package Group VQFN-HR|26 SO PowerPAD|8 SO PowerPAD|8 VQFN|20 SOIC|8,TSSOP|8 TSSOP|16,UQFN|16 TSSOP|16,UQFN|16 SOT-23|5 SOIC|8
Iq per channel(Max)(mA) 4 4 0.15 0.5
Offset drift(Typ)(uV/C) 1.6 1.6 0.5 4
Number of channels(#) 1 1 1 2 4 4 1 2
Rail-to-rail No No In,Out In to V-
Iq per channel(Typ)(mA) 3.2 3.2 0.12 0.3
Vos (offset voltage @ 25 C)(Max)(mV) 4 4 1.4 3
CMRR(Min)(dB) 100 100 104 84 75
Architecture FET FET CMOS Bipolar
Total supply voltage(Max)(+5V=5, +/-5V=10) 180 16 36
Input bias current(Max)(pA) 100 100 1000
GBW(Typ)(MHz) 6.5 6.5 1.25 1.2
CMRR(Typ)(dB) 147 147 120 100
Total supply voltage(Min)(+5V=5, +/-5V=10) 12 2.7 3
Output current(Typ)(mA) 30 30 80 30
Slew rate(Typ)(V/us) 25 4.5 0.5
Slew Rate(Typ)(V/us) 25
Total Supply Voltage(Max)(+5V=5, +/-5V=10) 180
Total Supply Voltage(Min)(+5V=5, +/-5V=10) 12
Signaling rate(Max)(Mbps) 5
Supply voltage(s)(V) 6 to 24
Common mode voltage(V) -12 to 12
Isolated No
Low power mode Standby
HBM ESD(kV) -8 to 8
Bus fault voltage(V) -42 to 42 -58 to 58
IEC 61000-4-2 contact(+/- kV) -8 to 8
Protocols SBC,CAN LIN,SBC
Number of channels 1
Signaling rate(max)(Bits) 100000
Supply voltage(V) 5 to 36
TI.com inventory 25000
Vn at 1 kHz(Typ)(nV/rtHz) 33 40
VIH(Min)(V) 1.49
Supply current(Max)(uA) 1 1
OFF-state leakage current(Max)(A) 0.0009
Vdd(Max)(V) 5.5
Supply current(Typ)(uA) 0.009 0.009
ON-state leakage current(Max)(A) 0.002 0.00095
Ron(Typ)(Ohms) 2 2
COFF(Typ)(pF) 6
Bandwidth(MHz) 400 400
CON(Typ)(pF) 19 19
Supply range(Max) 5.5
VIL(Max)(V) 0.87
Vdd(Min)(V) 1.08
ESD CDM(kV) 0.75
Configuration 1 1
ESD HBM(kV) 2
Power supply type Single
Input/output continuous current(Max)(mA) 30 30
Ron(Max)(Ohms) 4.9 4.9
Power supply voltage - single(V) 1.2,1.8,2.5,3.3,5
Gain error(%) 1
Common mode voltage(Min)(V) -0.2
Input offset (+/-)(Max)(uV) 150
Bandwidth(kHz) 350,210,150,105
Gain error drift (+/-)(Max)(ppm/C) 20
Common mode voltage(Max)(V) 26
Gain(V/V) 100,20,200,50
Product type Analog Output
Comparators(#) 0
Supply voltage(Min)(V) 2.7
Iq(Max)(mA) 0.3
Input offset drift (+/-)(Typ)(uV/C) 0.2
Supply voltage(Max)(V) 5.5