Bipolar (BJT) Single Transistor PNP 100 V 125 W 16 A 3000 ;RoHS Compliant: Yes

MOSFET, N TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:TO-204AA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:4MHz; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:4A; Device Marking:BDT95; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:4MHz; Gain Bandwidth ft Typ:4MHz; Hfe Min:20; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:60W; DC Collector Current:3A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:3A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.5kHz; Gain Bandwidth ft Typ:7MHz; Hfe Min:30; No. of Transistors:1; Power Dissipation Ptot Max:60W; Termination Type:Through Hole; Voltage Vcbo:100V

TRANSISTOR, NPN, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:8MHz; Power Dissipation Pd:150W; DC Collector Current:40A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-247; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):600mV; Continuous Collector Current Ic Max:30A; Current Ic Continuous a Max:30A; Current Ic hFE:40A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:8MHz; Gain Bandwidth ft Typ:8MHz; Hfe Min:10; No. of Transistors:1; Power Dissipation Ptot Max:150W; Termination Type:Screw

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:20MHz; Power Dissipation Pd:125W; DC Collector Current:15A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:7A; Current Ic hFE:5A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:10MHz; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:125W; Termination Type:Through Hole; Transistor Type:Power Bipolar; Voltage Vcbo:60V

TRANS,AUDIO,PNP,260V,30A,TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-260V; Transition Frequency ft:60MHz; Power Dissipation Pd:400W; DC Collector Current:-30A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-264; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Gain Bandwidth ft Typ:35MHz