The HMC194AMS8E is a low-cost SPDT switch in an 8-lead MSOP packages for use in applications which require high isolation between two RF paths. The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC cur- rents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when ?OFF?.APPLICATIONS Cellular/PCS Base Stations Portable Wireless MMDS & WirelessLAN

The HMC500LP3(E) is a high dynamic range Vector Modulator RFIC which is targeted for RF predistortion and feed-forward cancellation circuits, as well as RF cancellation and beam forming amplitude/phase correction circuits. The I & Q ports of the HMC500LP3(E) can be used to continuously vary the phase and amplitude of RF signals by up to 360 degrees and 40 dB respectively, while supporting a 3 dB modulation bandwidth of 150 MHz. With an input IP3 of +33 dBm and input noise floor of -152 dBm/Hz (at -10 dB maximum gain setting), the input IP3/noise floor ratio is 185 dB.APPLICATIONS Wireless Infrastructure HPA & MCPA Error Correction Pre-Distortion or Feed-Forward Linearization PCS, GSM and W-CDMA Systems Beam Forming or RF Cancellation Circuits

The HMC372LP3 & HMC372LP3E are GaAs pHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC617LP3(E).Applications GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio

The HMC487LP5E is a high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifiers housedin leadless 5 x 5 mm surface mount packages.Operating from 9 to 12 GHz, the amplifier provides20 dB of gain, +33 dBm of saturated power and 20%PAE from a +7V supply voltage. Output IP3 is +36 dBmtypical. The RF I/Os are DC blocked and matched to 50Ohms for ease of use. The HMC487LP5E eliminatesthe need for wire bonding, allowing use of surfacemount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use

The HMC450QS16G(E) is a high efficiency GaAs InGaP HBT Medium Power MMIC amplifier operating between 800 and 1000 MHz. The amplifier is packaged in a low cost, surface mount 16 lead package and offers the same pinout and functionality as the higher band HMC413QS16G 1.6 - 2.3 GHz PA. With a minimum of external components, the amplifier provides 26 dB of gain, +40 dBm OIP3 and +28.5 dBm of saturated power from a +5V supply voltage. The integrated power control (Vpd) can be used for full power down or RF output power/current control. The combination of high gain and high output IP3 make the HMC450QS16G(E) an ideal linear driver for Cellular, PCS & 3G applications.Applications GSM, GPRS, & Edge? CDMA & WCDMA? Base Stations & Repeaters

The HMC6380LC4B is a wideband MMIC VoltageControlled Oscillator which incorporates the resonator,negative resistance device, and varactor diode. Outputpower and phase noise performance are excellentover temperature due to the oscillator?s monolithicconstruction. The Vtune port accepts an analog tuningvoltage from 0 to +23V. The HMC6380LC4B VCOoperates from a single +5V supply, consumes only75 mA of current, and is housed in a RoHS compliantSMT package. This wideband VCO uniquely combinesthe attributes of ultra small size, low phase noise, lowpower consumption, and wide tuning range.Applications Industrial/Medical EquipmentMeasurement EquipmentSatcomMilitary Radar, EW, & ECM

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless & WLL

The HMC534LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC534LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC734 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC734 integrates a resonator, negative resistance device, varactor diode and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +18 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use