High Accuracy Ultralow Quiescent Current, 500 mA, anyCAP Low Dropout Features: High accuracy over line and load: ±0.9% @ 25°C, ±1.8% over temperature Ultralow dropout voltage: 200 mV (typ) @ 500 mA Requires only CO = 1.0 µF for stability anyCAP® = stable with any type of capacitor (Including MLCC) Current and thermal limiting Low noise Low shutdown current: < 10 nA (typ) 2.6 V to 12 V supply range –40°C to +85°C ambient temperature range

10-Bit, 1 MSPS, Low-Power A/D Converter in SC70 and MSOP Packages Features: Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies Wide input bandwidth 71 dB SNR at 100 kHz input frequency No pipeline delays Flexible power/serial clock speed management High speed serial interface SPI/QSPI™/MICROWIRE/DSP compatible Standby mode: 1 µA maximum 6-lead SC70 package 8-lead MSOP Qualified for automotive applications

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

Temperature Sensor Digital, Local/Remote 0°C ~ 100°C 7 b 8-MSOP

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

50 Db Gsm Pa Controller

Low Noise XFET Voltage References with Current Sink and Source Capability Features: Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.500 V output No external capacitor required Low temperature coefficient A Grade: 10 ppm/°C maximum B Grade: 3 ppm/°C maximum Load regulation: 15 ppm/mA Line regulation: 20 ppm/V Wide operating range ADR434: 6.1 V to 18 V High output source and sink current: 30 mA and −20 mA Wide temperature range: −40°C to +125°CADR434-EP supports defense and aerospace applications (AQEC standard) Download ADR431-EP/ADR434-EP/ADR435-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/11602 DSCC Drawing Number

CHASSIS PIT ARM Wall Mount Type 6 12kg

ARM HOSE & BRACKET BVX 600MM; Accessory Type:Exhaust Arm Kit; For Use With:OK International

MDK CORTEX-M, NODE-LOCKED