The ADL5726 is a narrow-band, high performance, low noise amplifier (LNA) targeting microwave radio link receiver designs. The monolithic silicon germanium (SiGe) design is optimized for microwave radio link bands ranging from 21.2 GHz to 23.6 GHz. The unique design offers a single-ended 50 ? input impedance and provides a 100 ? balanced differential output that is ideal for driving Analog Devices, Inc., differential downconverters and radio frequency (RF) sampling analog-to-digital converters (ADCs). This LNA provides noise figure performance that, in the past, required more expensive three-five (III-V) compounds process technology to achieve.The ADL5721 and ADL5723 to ADL5726 family of narrow-band LNAs are each packaged in a tiny, thermally enhanced, 2.00 mm ? 2.00 mm LFCSP package. The ADL5721 and ADL5723 to ADL5726 family operates over the temperature range of ?40?C to +85?C.Applications Point to point microwave radios Instrumentation Satellite communications (SATCOM) Phased arrays

The ADL8142 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 23 GHz to 31 GHz. The ADL8142 provides a typical gain of 27 dB, a 1.6 dB typical noise figure, and a typical output third-order intercept (OIP3) of 29 dBm at 27 GHz to 31 GHz, requiring only 25 mA from a 2 V supply voltage. Note that the OIP3 can be improved with larger drain currents. The ADL8142 also features inputs and outputs that are ac-coupled and internally matched to 50 ?, making it ideal for high capacity microwave radio applications.The ADL8142 is housed in a RoHS-compliant, 2 mm ? 2 mm, 8-lead LFCSP.APPLICATIONSSatellite communicationTelecommunicationsCivilian radar

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage. The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 ?, and facilitates integration into multichip modules (MCMs). Note that throughout the data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.Applications Military and space Test instrumentation Communications

The ADMV4540 is a highly integrated quadrature demodulator with integrated synthesizer ideally suited for next generation K band satellite communication.The RF front end of the ADMV4540 consists of two low noise amplifier (LNA) paths, each with an optimal cascaded, 5 dB, double sideband noise figure at maximum gain, while minimizing external components. The dual paths allow support for antenna polarization. Selection of the LNA path can be done through the SPI.The LNA output is then downconverted to baseband using an inphase and quadrature (I/Q) mixer. The I/Q mixer output is then fed into fully differential low noise and low distortion programmable filters and variable gain amplifiers (VGAs). Each channel is capable of rejecting large, out of band interferers while reliably boosting the wanted signal, thus reducing the bandwidth and resolution requirements on the analog-to-digital converters (ADCs) of the system. The excellent matching between channels and their highspurious-free dynamic range (SFDR) over all gain and bandwidth settings make the ADMV4540 ideal for satellite communication systems with dense constellations, multiple carriers, and nearby interferers.The three filter corners of 125 MHz, 250 MHz, and 500 MHz are all programmable via a serial peripheral interface (SPI). The filters provide a sixth-order Butterworth response with ?3 dB corner frequencies of 141 MHz, 282 MHz, and 565 MHz. For operation beyond 565 MHz, the filter can be disabled and completely bypassed, thereby extending the ?3 dB bandwidth up to 900 MHz.The high dynamic range baseband output amplifiers of the ADMV4540 provide an overall nominal conversion gain of 57 dB. The three baseband voltage variable attenuator (VVA) pins (VCTRL_BBVVAx) of the ADMV4540 can be used for automatic gain control (AGC), giving the ADMV4540 a wide RF input dynamic range.This feature rich device contains an integrated fractional-N phase-locked loop (PLL) and a low phase noise voltage controlled oscillator (VCO) that generates the necessary on-chip local oscillator (LO) signal for the two double balanced I/Q mixers, eliminating the need for external frequency synthesis. The VCO utilizes an internal automatic calibration routine that allows the PLL to select the necessary settings and lock.The reference input (REFIN) to the PLL of the ADMV4540 employs a differentially excited crystal oscillator at 50 MHz. Alternatively, the REFIN can be driven by an external single-ended frequency reference up to 100 MHz. The phase frequency detector (PFD) comparison frequency operates up to 100 MHz, which allows for continuous LO coverage from 17 GHz to 21.5 GHz in extremely fine steps.The ADMV4540 operates on a 3.3 V supply with less than 3.2 W of total power dissipation. It is available in a 48-terminal, RoHS compliant, 7 mm ? 7 mm LGA package with an exposed paddle. The ADMV4540 can operate over the ?40? to +85? temperature range on a + 3.3 V power supply.APPLICATIONSSatellite communications

The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 40 dBm. The amplifier requires 600 mA from a 5 V supply on VDD2A, VDD2B, and VDD1. The ADPA7002CHIP also features inputs/outputs (I/Os) that are internally matched to 50 ?, and facilitates integration into multichip modules (MCMs). All data is taken with the on substrate chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils) long.Applications Military and space Test instrumentation

The ADRF5046 is a reflective, single-pole four-throw (SP4T) switch manufactured in the silicon process.?The ADRF5046 operates from 100 MHz to 44 GHz with insertion loss of lower than 3.0 dB and isolation of higher than 31 dB. The device has a radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.?The ADRF5046 draws a low current of 3 ?A on the positive supply of +3.3 V, and ?110 ?A on the negative supply of ?3.3 V.??The device provides complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls.?The ADRF5046 comes in a 20-terminal, 3 mm ? 3 mm, RoHScompliant, land grid array (LGA) package and can operate from ?40?C to +105?C.?Applications Industrial Scanner Test and instrumentation Cellular Infrastructure ? mmWave 5G Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5721 is a silicon, 4-bit digital attenuator with a 30 dB attenuation control range in 2 dB steps.This device operates from 9 kHz to 40 GHz with better than 3.4 dB of insertion loss. The ATTIN port of the ADRF5721 has a radio frequency (RF) input power handling capability of 26 dBm average and 30 dBm peak for all states.The ADRF5721 requires a dual supply voltage of +3.3 V and ?3.3 V. The device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5721 is pin compatible with the ADRF5731, the fast switching version, which operates from 100 MHz to 40 GHz.The ADRF5721 RF ports are designed to match a characteristic impedance of 50 ?.The ADRF5721 comes in a 16-terminal, 2.5 mm ? 2.5 mm, RoHS compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G millimeter wave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5730 is a silicon, 6-bit digital attenuator with 31.5 dB attenuation control range in 0.5 dB steps.This device operates from 100 MHz to 40 GHz with better than 4.8 dB of insertion loss and excellent attenuation accuracy. The ADRF5730 has a radio frequency (RF) input power handling capability of 27 dBm average and 30 dBm peak for all states.The ADRF5730 requires a dual supply voltage of +3.3 V and ?3.3 V. The device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5730 is pin-compatible with the ADRF5720 low frequency cutoff version, which operates from 9 kHz to 40 GHz.The ADRF5730 RF ports are designed to match a characteristic impedance of 50 ?. For wideband applications, impedance matching on the RF transmission lines can further optimize high frequency insertion loss, return loss, and attenuation accuracy characteristics. Refer to the Electrical Specifications section, the Typical Performance Characteristics section, and the Applications Information section for more details.The ADRF5730 comes in a 24-terminal, 4 mm ? 4 mm, RoHS-compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G millimeter wave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5740 is a silicon, 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps.The ADRF5740 operates from 10 MHz to 60 GHz with less than 3.3 dB of insertion loss and with ?(0.2 + 7.0% of attenuation state) of attenuation accuracy at 55 GHz. The ATTIN port of the ADRF5740 has an RF input power handling capability of 24 dBm average and 24 dBm peak for all states.The ADRF5740 requires a dual supply voltage of +3.3 V and ?3.3 V. The ADRF5740 features parallel mode control, and CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5740 RF ports are designed to match a characteristic impedance of 50 ?. The ADRF5740 comes in a 16-terminal, 2.5 mm ? 2.5 mm, RoHS compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G millimeter wave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRV9002 is a highly integrated RF transceiver that has dual-channel transmitters, dual-channel receivers, integrated synthesizers, and digital signal processing functions.The ADRV9002 is a high performance, highly linear, high dynamic range transceiver designed for performance vs. power consumption system optimization. The device is configurable and ideally suited to demanding, low power, portable and battery powered equipment. The ADRV9002 operates from 30 MHz to 6000 MHz and covers the UHF, VHF, industrial, scientific, and medical (ISM) bands, and cellular frequency bands in narrow-band (kHz) and wideband operation up to 40 MHz. The ADRV9002 is capable of both TDD and FDD operation.The transceiver consists of direct conversion signal paths with state-of-the-art noise figure and linearity. Each complete receiver and transmitter subsystem includes dc offset correction, quadrature error correction (QEC), and programmable digital filters, which eliminate the need for these functions in the digital baseband. In addition, several auxiliary functions, such as auxiliary analog-to-digital converters (ADCs), auxiliary digital-to-analog converters (DACs), and general-purpose inputs/outputs (GPIOs), are integrated to provide additional monitoring and control capability.The fully integrated phase-locked loops (PLLs) provide high performance, low power, fractional-N frequency synthesis for the transmitter, receiver, and clock sections. Careful design and layout techniques provide the isolation required in high performance personal radio applications. All voltage controlled oscillator (VCO) and loop filter components are integrated to minimize the external component count. The local oscillators (LOs) have flexible configuration options and include fast lock modes.The transceiver includes low power sleep and monitor modes to save power and extend the battery life of portable devices while monitoring communications.The fully integrated, low power digital predistortion (DPD) is optimized for both narrow-band and wideband signals and enables linearization of high efficiency power amplifiers.The ADRV9002 core can be powered directly from 1.0 V, 1.3 V, and 1.8 V regulators and is controlled via a standard 4-wire serial port. Other voltage supplies are used to provide proper digital interface levels and to optimize the receiver, transmitter, and auxiliary converter performance.High data rate and low data rate interfaces are supported using configurable CMOS or low voltage differential signaling (LVDS) serial synchronous interface (SSI) choice.The ADRV9002 is packaged in a 12 mm ? 12 mm, 196-ball chip scale package ball grid array (CSP_BGA).APPLICATIONS Mission critical communications Very high frequency (VHF), ultrahigh frequency (UHF), and cellular to 6 GHz Time division duplexing (TDD) and frequency division duplexing (FDD) applications