GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.025 GHz to 12 GHz Features:Low noise figure: 2.5 dB typical at 0.025 GHz to 10 GHzSingle positive supply (self biased)High gain: 16.5 dB typical at 0.025 GHz to 10 GHzHigh OIP3: 36 dBm typical at 0.025 GHz to 10 GHzRoHS-compliant, 2 mm 2 mm, 6-lead LFCSP

GaAs pHEMT MMIC 2 Watt Power Amplifier, DC - 22 GHz Features: P1dB output power: +32 dBmPsat output power: +34 dBmHigh Gain: 15 dBOutput IP3: 42 dBm Supply Voltage: Vdd = +15V @ 500 mA50 Ohm Matched Input/Output32 Lead 5x5 mm LFCSP Package: 25 mm2

RF AMPLIFIER, 1GHZ TO 8GHZ, LFCSP-EP-16;

Wideband MMIC VCO with Buffer Amplifier 8.0 - 16.0 GHz Features: Wide Tuning Bandwidth Pout: +6 dBm Low SSB Phase Noise: -92 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 75 mA Ceramic Leadless SMT Package: 16 mm²

Low Noise Amplifier, 0.4 GHz to 11 GHz Features: Low noise figure: 1.4 dB typical Single positive supply (self biased) High gain: ≤15.5 dB typical High OIP3: ≤33 dBm typical RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSPHMC8412TCPZ-EP Supports defense and aerospace applications (AQEC standard) Download the HMC8412TCPZ-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21602 DSCC Drawing Number

10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier Features: High small signal gain: 15.0 dB typical POUT: 40 dBm typical at PIN = 30 dBm High PAE: 55% typical at PIN = 30 dBm Frequency range: 0.01 GHz to 2.8 GHz across all frequencies VDD = 28 V at quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP package

Low Frequency to 3 GHz, Dual VGA with Output Common-Mode and DC Offset Control Features: Dual, matched VGAs Maximum voltage gain: 18 dB Gain control attenuation range: 21 dB typical for TA = 25°C ±1 dB gain flatness bandwidth: 2.5 GHz typical IMD2 and IMD3 (1.5 V p-p output level) −56.8 dBc typical and −75 dBc typical, respectively, at VGN = 1.5 V, 980 MHz and 1000 MHz tones HD2 and HD3 (1.5 V p-p output level) −75 dBc typical and −73.7 dBc typical, respectively, at VGN = 1.5 V, fundamental at 500 MHz −55.9 dBc typical and −57.5 dBc typical, respectively, at VGN = 1.5 V, fundamental at 1 GHz Noise figure: 10.5 dB typical at maximum gain and at 500 MHz 14.8 dB at maximum gain and at 2 GHz Noise figure decreases dB for dB with gain backoff 100 differential input impedance ≤ 16 differential output impedance Programmable Output DC offset nominal range: ± 400 mV Output common-mode control: > ± 200 mV for VOCM = ±0.2 V Single- or dual-supply operation with power-down feature Single supply: VPOS = 5 V, VNEG = 0 V (nominal) Dual supply: VPOS = 3 V, VNEG = −2 V (nominal)

Wideband, Low Noise Amplifier, Single Positive Supply, 0.01 GHz to 26.5 GHz Features:Single positive supplyLow noise figure: 2.5 dB typical from 0.01 GHz to 14 GHzHigh gain: 17.5 dB typical from 0.01 GHz to 14 GHzOP1dB: 13.5 dBm typical from 0.01 GHz to 20 GHzHigh OIP3: 26 dBm typical from 0.01 GHz to 14 GHzRoHS-compliant, 4 mm 4 mm, 24-lead LFCSP

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm

Wideband MMIC VCO with Buffer Amplifier 8.0 - 16.0 GHz Features: Wide Tuning Bandwidth Pout: +6 dBm Low SSB Phase Noise: -92 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 75 mA Ceramic Leadless SMT Package: 16 mm²