Wideband MMIC VCO with Buffer Amplifier 8.0 - 16.0 GHz Features: Wide Tuning Bandwidth Pout: +6 dBm Low SSB Phase Noise: -92 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 75 mA Ceramic Leadless SMT Package: 16 mm²

40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier Features: High output power: 46 dBm typical at PIN = 23 dBm High small signal gain: 32.5 dB typical High power gain: 23 dB typical at PIN = 23 dBm Frequency range: 9 GHz to 10.5 GHz High power added efficiency: 40% typical at PIN = 23 dBm Supply voltage: VDDxA/VDDxB = 28 V at 1000 mA 6 mm × 6 mm, 40-lead LFSCP

RF AMPLIFIER, 50GHZ TO 95GHZ, BARE DIE;

RF AMP 19DB 0.05-3GHZ 5V SOT-89-3; Frequency Min:50MHz; Frequency Max:3GHz; Gain:19dB; Noise Figure Typ:2.5dB; RF IC Case Style:SOT-89; No. of Pins:3Pins; Supply Voltage Min:-; Supply Voltage Max:5V; Packaging:Each

AMPLIFIERS / PCKTTAPE7 ;ROHS COMPLIANT: YES

GaAs, pHEMT, MMIC,1 W Power Amplifier, 18 GHz to 44 GHz Features: Output P1dB: 31 dBm typical at 22 GHz to 36 GHz PSAT: 32 dBm typical at 22 GHz to 36 GHz Gain: 21.5 dB typical at 22 GHz to 36 GHz Output IP3: 41 dBm typical at 22 GHz to 44 GHz Supply voltage: 5 V typical at 1400 mA maximum 50 matched input and output Die size: 3.610 mm × 3.610 mm × 0.102 mm

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier Features:ADPA7008 Chip Features Output P1dB: 30.5 dBm typical at 22 GHz to 42 GHz PSAT: 31 dBm typical at 22 GHz to 42 GHz Gain: 18 dB typical at 22 GHz to 42 GHz Input return loss: 22 dB typical at 22 GHz to 42 GHz Output return loss: 23 dB typical at 22 GHz to 42 GHz Output IP3: 38 dBm typical at 22 GHz to 42 GHz Supply voltage: 5 V typical at 1500 mA 50 Ω matched input and output Die size: 3.610 mm × 3.610 mm × 0.102 mmADPA7008AEHZ Features Output P1dB: 30 dBm typical at 22 GHz to 40 GHz PSAT: 31 dBm typical at 22 GHz to 40 GHz Gain: 17.5 dB typical at 22 GHz to 40 GHz Input return loss: 12 dB typical at 22 GHz to 40 GHz Output return loss: 9.5 dB typical at 22 GHz to 40 GHz Output IP3: 37 dBm typical at 22 GHz to 40 GHz Supply voltage: 5 V typical at 1500 mA 50 Ω matched input and output 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS] Integrated power detector

Low Noise Amplifier, 0.4 GHz to 11 GHz Features: Low noise figure: 1.4 dB typical Single positive supply (self biased) High gain: ≤15.5 dB typical High OIP3: ≤33 dBm typical RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSPHMC8412TCPZ-EP Supports defense and aerospace applications (AQEC standard) Download the HMC8412TCPZ-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21602 DSCC Drawing Number

GaAs pHEMT MMIC 2 Watt Power Amplifier, DC - 22 GHz Features: P1dB output power: +32 dBmPsat output power: +34 dBmHigh Gain: 15 dBOutput IP3: 42 dBm Supply Voltage: Vdd = +15V @ 500 mA50 Ohm Matched Input/Output32 Lead 5x5 mm LFCSP Package: 25 mm2

>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier Features: High small signal gain: 34.5 dB typical High output power: 42 dBm typical at PIN = 18 dBm High PAE: 55% typical at PIN = 18 dBm Frequency range: 2.7 GHz to 3.8 GHz Supply voltage: VDD = 28 V at a quiescent current of 150 mA 5 mm × 5 mm, 32-lead LFCSP_CAV package