10 GHz to 40 GHz, 1:4 Channel, 4 Frequency Multiplier/Filter Features: 4 input frequency multiplier with programmable harmonic filter Quad Differential Output PAs with independent Enable Control Input Frequency Range: 2.5 GHz to 10 GHz Output Frequency Range: 10 GHz to 40 GHz Input power: 20 dBm (50 ) Output power: 5 dBm differential (100 ) Harmonic rejection: 20 dBc to 40 dBc at all frequencies 3-Wire or 4-Wire SPI Control of all functions On-Chip Programmable State Machines for fast multiplier/filter and transmitter switching and control On-chip temperature sensor, output power detectors, and ADC DC power: 450 mW (2.5 V supply) 6 mm 6 mm, 40-terminal LGA package

Phase Detector / PLL Frequency Synthesizer Features: 400 MHz bandwidth 2.7 to 3.3 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3 V systems Programmable charge pump currents 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode 104  MHz phase detectorADF4002-EP supports defense and aerospace applications (AQEC standard) Download ADF4002-EP data sheet (pdf) Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/11607 DSCC Drawing Number

400 MHz TO 4000 MHz Low Noise Amplifier Features: Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Requires few external components Integrated active bias control circuit Integrated dc blocking capacitors Adjustable bias for low power applications Single-supply operation from 3 V to 5 V Gain of 20.8 dB at 900 MHz OIP3 of 37.0 dBm at 900 MHz P1dB of 21.8 dBm at 900 MHz Small footprint LFCSP Pin-compatible version with 21.5 dB gain available

21.2 GHz to 23.6 GHz, Low Noise Amplifier Features: Frequency range: 21.2 GHz to 23.6 GHz Typical gain of >22.5 dB Low noise input Noise figure 3.3 dB typical at 21.2 GHz 3.4 dB typical at 23.6 GHz High linearity input ≥1.0 dBm typical input third-order intercept (IIP3) −8 dBm input 1 dB compression point (P1dB) at 23.6 GHz Matched 50 Ω single-ended input Matched 100 Ω differential outputs 8-lead, 2.00 mm × 2.00 mm LFCSP microwave packaging

1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz Features: Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package

1 Watt Power Amplifier SMT, 3.3 - 3.8 GHz Features: Gain: 31 dB 40% PAE @ +32.5 dBm pout 2% EVM @ Pout = +22 dBm with 54 Mbps OFDM Signal +46 dBm Output IP3 Integrated Power Control (Vpd) Single +5V Supply

Medium Power Amplifier SMT, 17.5 - 25.5 GHz Features: Gain: 13 dB Saturated Power: +23 dBm @ 26% PAE Supply Voltage: +5V 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

Medium Power Amplifier SMT, 5 - 20 GHz Features: Gain: 19 dB Saturated Power: +21 dBm @ 21% PAE Output IP3: +30 dBm Single Supply: +5V @ 114 mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz Features: Output IP3: +48 dBm 22.5 dB Gain @ 400 MHz 9 dB Gain @ 2100 MHz 53% PAE @ +31 dBm Pout +24 dBm CDMA2000 Channel Power@ -45 dBc ACP Single +5V Supply Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm²

GaAs pHEMT MMIC Low Noise Amplifier, DC - 20 GHz Features: Noise Figure: 2.5 dB @ 10 GHz Gain: 14 dB @ 10 GHz P1dB Output Power: +16.5 dBm @ 10 GHz Supply Voltage: +8V @ 75 mA 50 Ohm Matched Input/Output 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2