The HMC463LP5(E) is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at 0.5 dB from 6 - 18 GHz making the HMC463LP5(E) ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5(E) LNA I/Os are internally matched to 50 Ohms and are internally DC blocked.Applications Telecom Infrastructure  Microwave Radio & VSAT  Military EW, ECM & C³I  Test Instrumentation  Fiber Optics

40MHz to 900MHz Quadrature Demodulator Features: RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7° Noise Figure: 12.4dB at 800MHz Conversion Gain: 3.3dB at 800MHz Baseband Bandwidth: 130MHz Single Ended, 50 Matched 2XLO Input Shutdown Mode 16-Lead QFN (4mm × 4mm) Package with Exposed Pad

The ADRF5740 is a silicon, 4-bit digital attenuator with 22 dB attenuation control range in 2 dB steps.The ADRF5740 operates from 10 MHz to 60 GHz with less than 3.3 dB of insertion loss and with ?(0.2 + 7.0% of attenuation state) of attenuation accuracy at 55 GHz. The ATTIN port of the ADRF5740 has an RF input power handling capability of 24 dBm average and 24 dBm peak for all states.The ADRF5740 requires a dual supply voltage of +3.3 V and ?3.3 V. The ADRF5740 features parallel mode control, and CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5740 RF ports are designed to match a characteristic impedance of 50 ?. The ADRF5740 comes in a 16-terminal, 2.5 mm ? 2.5 mm, RoHS compliant, land grid array (LGA) package and operates from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G millimeter wave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification

DC-45GHz 0.2W DISTRIBUTED AMPLIFIER

The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os are internally matched to 50 ? facilitating integration into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.Applications Test Instrumentation Military & Space Fiber Optics

The ADF5355 allows implementation of fractional-N or integer-N phase-locked loop (PLL) frequency synthesizers when used with an external loop filter and an external reference frequency. The wideband microwave VCO design permits frequency operation from 6.8 GHz to 13.6 GHz at one radio frequency (RF) output. A series of frequency dividers at another frequency output permits operation from 54 MHz to 6800 MHz.The ADF5355 has an integrated VCO with a fundamental output frequency ranging from 3400 MHz to 6800 MHz. In addition, the VCO frequency is connected to divide by 1, 2, 4, 8, 16, 32, or 64 circuits that allow the user to generate RF output frequencies as low as 54 MHz. For applications that require isolation, the RF output stage can be muted. The mute function is both pin and software controllable.Control of all on-chip registers is through a simple 3-wire interface. The ADF5355 operates with analog and digital power supplies ranging from 3.15 V to 3.45 V, with charge pump and VCO supplies from 4.75 V to 5.25 V. The ADF5355 also contains hardware and software power-down modes.Applications Wireless infrastructure (W-CDMA, TD-SCDMA, WiMAX, GSM, PCS, DCS, DECT) Point to point/point to multipoint microwave links Satellites/VSATs Test equipment/instrumentation Clock generation

The HMC574AMS8E is low-cost SPDT switchin 8-lead MSOP packages for use in transmit/receive applications which requires very lowdistortion at high incident power levels. Thedevice can control signals from DC to 3 GHz andis especially suited for Cellular/3G infrastructure,WiMAX and WiBro applications with only 0.3 dBtypical insertion loss. The design provides 5 wattpower handling performance and +63 dBm thirdorder intercept at +8 Volt bias. RF1 and RF2 arereflective shorts when ?Off.?Applications Cellular/3G infrastructure Private mobile radio handsets WLAN, WiMAX and WiBro Automotive telematics Test equipment

The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. The P1dB output power of +12 dBm enables the LNA to function as a LO driver for many of Hittite’s balanced, I/Q and image reject mixers. The HMC1040LP 3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity microwave radios and VSAT applications.Applications Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics